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SI3447BDV-T1-E3

SI3447BDV-T1-E3
Mfr. #:
SI3447BDV-T1-E3
제조사:
Vishay
설명:
IGBT Transistors MOSFET 12V 5.2A 2W
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI3447BDV-T1-E3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3447BDV-T1-E3 DatasheetSI3447BDV-T1-E3 Datasheet (P4-P6)
ECAD Model:
제품 속성
속성 값
제조사
비쉐이
제품 카테고리
FET - 단일
Tags
SI3447BDV-T, SI3447B, SI3447, SI344, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 12V 4.5A 6-Pin TSOP T/R
***ark
MOSFET, P, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:4.5A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-1V; Case Style:TSOP; Termination ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, TSOP-6; Transistor Polarity:P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:9.3nC; Current Id Max:-4.5A; Current Temperature:25°C; External Depth:2.85mm; External Length / Height:1.45mm; External Width:3mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance @ Vgs = 2.5V:53mohm; On State Resistance @ Vgs = 4.5V:40mohm; Package / Case:TSOP; Power Dissipation Pd:1.1W; Power Dissipation Pd:1.1W; Pulse Current Idm:20A; Reverse Recovery Time trr Typ:40ns; SMD Marking:B7xxx; Termination Type:SMD; Voltage Vds:12V; Voltage Vds Typ:-12V; Voltage Vgs Max:-8V; Voltage Vgs Rds on Measurement:4.5V
부분 # 제조 설명 재고 가격
SI3447BDV-T1-E3
DISTI # SI3447BDV-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI3447BDV-T1-E3
    DISTI # SI3447BDV-T1-E3CT-ND    		Vishay SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI3447BDV-T1-E3
      DISTI # SI3447BDV-T1-E3DKR-ND      		Vishay SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI3447BDV-T1-E3
        DISTI # 70026200        		Vishay SiliconixMOSFET,12V P-CH 95 MOHM @ 1.8V VGS Rated Trench
        RoHS: Compliant        		0
        • 3000:$0.2400
        • 6000:$0.2200
        • 9000:$0.2000
        SI3447BDV-T1-E3
        DISTI # 781-SI3447BDV-E3        		Vishay IntertechnologiesMOSFET 12V 5.2A 2W
        RoHS: Compliant        		0
          SI3447BDV-T1-E3Vishay Intertechnologies 1434
            SI3447BDV-T1-E3Vishay Siliconix 1915
            • 9:$0.5625
            • 37:$0.3656
            • 138:$0.2109
            • 476:$0.1800
            • 1029:$0.1575
            SI3447BDV-T1-E3Vishay SemiconductorsSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 4.5A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET1532
            • 890:$0.1950
            • 161:$0.2250
            • 1:$0.7500
            SI3447BDV-T1-E3
            DISTI # 1213158            		Vishay IntertechnologiesMOSFET, P, TSOP-6
            RoHS: Compliant            		0
            • 1:$0.8480
            • 10:$0.6660
            • 100:$0.5180
            • 500:$0.4340
            • 1000:$0.3730
            영상 부분 # 설명
            SI3447BDV-T1-GE3

            Mfr.#: SI3447BDV-T1-GE3

            OMO.#: OMO-SI3447BDV-T1-GE3

            		 MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3
            SI3447BDV-T1-E3

            Mfr.#: SI3447BDV-T1-E3

            OMO.#: OMO-SI3447BDV-T1-E3-VISHAY

            		 IGBT Transistors MOSFET 12V 5.2A 2W
            SI3447BDV

            Mfr.#: SI3447BDV

            OMO.#: OMO-SI3447BDV-1190

            		 신규 및 오리지널
            SI3447BDV-T1

            Mfr.#: SI3447BDV-T1

            OMO.#: OMO-SI3447BDV-T1-1190

            		 신규 및 오리지널
            SI3447BDV-T1-GE3

            Mfr.#: SI3447BDV-T1-GE3

            OMO.#: OMO-SI3447BDV-T1-GE3-VISHAY

            		 MOSFET P-CH 12V 4.5A 6-TSOP
            유효성
            재고:
            Available
            주문 시:
            2000
            수량 입력:
            SI3447BDV-T1-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
            참고 가격(USD)
            수량
            단가
            내선 가격
            1
            US$0.24
            US$0.24
            10
            US$0.22
            US$2.24
            100
            US$0.21
            US$21.26
            500
            US$0.20
            US$100.40
            1000
            US$0.19
            US$189.00
            2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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