A2G35S160-01SR3

A2G35S160-01SR3
Mfr. #:
A2G35S160-01SR3
제조사:
NXP / Freescale
설명:
RF Amplifier A2G35S160-01S/CFM2F///REEL 13 Q1 NDP
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
A2G35S160-01SR3 데이터 시트
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HTML Datasheet:
A2G35S160-01SR3 DatasheetA2G35S160-01SR3 Datasheet (P4-P6)A2G35S160-01SR3 Datasheet (P7-P9)A2G35S160-01SR3 Datasheet (P10)
ECAD Model:
추가 정보:
A2G35S160-01SR3 추가 정보
제품 속성
속성 값
제조사:
IDT(통합 장치 기술)
제품 카테고리:
RF 증폭기
RoHS:
Y
패키지/케이스:
VFQFPN-32
시리즈:
F1240
포장:
상표:
IDT
상품 유형:
RF 증폭기
공장 팩 수량:
2500
하위 카테고리:
무선 및 RF 집적 회로
상표명:
플랫 노이즈
부품 번호 별칭:
IDTF1240
Tags
A2G3, A2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Airfast Rf Power Gan Transistor, 3400-3800 Mhz, 32 W Avg., 48 V
***W
RF Power Transistor,3400 to 3600 MHz, 126 W, Typ Gain in dB is 15.7 @ 3500 MHz, 48 V, GaN, SOT1828
***et Europe
RF Power GaN Transistor 3400-3600MHz 32W 48V Airfast
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
부분 # 제조 설명 재고 가격
A2G35S160-01SR3
DISTI # A2G35S160-01SR3-ND
NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$116.3701
A2G35S160-01SR3
DISTI # A2G35S160-01SR3
NXP SemiconductorsRF Power GaN Transistor 3400-3600MHz 32W 48V Airfast - Tape and Reel (Alt: A2G35S160-01SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Americas - 0
  • 250:$127.4900
  • 500:$122.4900
  • 1000:$117.6900
  • 1500:$113.3900
  • 2500:$111.2900
A2G35S160-01SR3
DISTI # 841-A2G35S160-01SR3
NXP SemiconductorsRF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 32 W AVG., 48 V
RoHS: Compliant
0
  • 250:$131.2400
A2G35S160-01SR3
DISTI # A2G35S160-01SR3
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 250:$135.1000
영상 부분 # 설명
A2G35S160-01SR3

Mfr.#: A2G35S160-01SR3

OMO.#: OMO-A2G35S160-01SR3

RF Amplifier A2G35S160-01S/CFM2F///REEL 13 Q1 NDP
A2G35S160-01SR3

Mfr.#: A2G35S160-01SR3

OMO.#: OMO-A2G35S160-01SR3-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF POWER GaN TRANSISTOR 3400-3800 MHz, 32 W AVG., 48 V
유효성
재고:
Available
주문 시:
2000
수량 입력:
A2G35S160-01SR3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
시작
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