IPB009N03LGATMA1

Mfr. #:: IPB009N03LGATMA1
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB009N03LGATMA1 데이터 시트
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HTML Datasheet:: IPB009N03LGATMA1 Datasheet IPB009N03LGATMA1 Datasheet (P4-P6)IPB009N03LGATMA1 Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-263-7

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 180 A

Rds On - 드레인 소스 저항:: 700 mOhms

Vgs th - 게이트 소스 임계 전압:: 1 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 227 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 250 W

구성:: 하나의

채널 모드:: 상승

상표명:: 옵티모스

포장:: 릴

키:: 4.4 mm

길이:: 10 mm

시리즈:: OptiMOS 3

트랜지스터 유형:: 1 N-Channel

너비:: 9.25 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 180 S

가을 시간:: 22 ns

상품 유형:: MOSFET

상승 시간:: 14 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 103 ns

일반적인 켜기 지연 시간:: 26 ns

부품 번호 별칭:: G IPB009N03L IPB9N3LGXT SP000394657

Tags: IPB009N03LG, IPB00, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB009N03LGATMA1 설명

***ure Electronics: Single N-Channel 30 V 0.95 mOhm 227 nC OptiMOS Power Mosfet - D2PAK-7

***ineon: With the new OptiMOS3 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS3 30V the best choice for the demanding requirements of battery management, OR-ing, e-fuse and hot-swap application. | Summary of Features: Lowest on-state resistance; High DC and pulsed current capability; Easy to design-in | Benefits: Increased battery lifetime and system efficiency; Saving space (reducing the number of devices needed); Saving costs | Target Applications: Or-ing in power supply; Hot-swap; e-fuse; Battery management

***ment14 APAC: MOSFET, N CH, 180A, 30V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:30V; On Resistance Rds(on):700µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Power Dissipation Pd:250W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Market price

부분 #	제조	설명	재고	가격
IPB009N03LGATMA1 DISTI # V72:2272_06377968	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1383	1000:$1.6010 500:$1.6500 250:$1.6980 100:$1.7470 25:$1.9410 10:$2.1570 1:$2.3460
IPB009N03LGATMA1 DISTI # V36:1790_06377968	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0
IPB009N03LGATMA1 DISTI # IPB009N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1934In Stock	500:$2.3594 100:$2.9138 10:$3.5530 1:$3.9800
IPB009N03LGATMA1 DISTI # IPB009N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1934In Stock	500:$2.3594 100:$2.9138 10:$3.5530 1:$3.9800
IPB009N03LGATMA1 DISTI # IPB009N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	5000:$1.7663 2000:$1.8353 1000:$1.9319
IPB009N03LGATMA1 DISTI # 26194931	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1383	1000:$1.7211 500:$1.7737 250:$1.8254 100:$1.8780 25:$2.0866 10:$2.3188 4:$2.5219
IPB009N03LGXT DISTI # IPB009N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 1000	1000:$1.8076 2000:$1.7424 4000:$1.6794 6000:$1.6229 10000:$1.5940
IPB009N03LGATMA1 DISTI # SP000394657	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.8900 2000:€1.5900 4000:€1.4900 6000:€1.3900 10000:€1.2900
IPB009N03LGATMA1. DISTI # 15AC3078	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes	0	10000:$1.6000 6000:$1.6300 4000:$1.6800 2000:$1.7500 1:$1.8100
IPB009N03LGATMA1 DISTI # 726-IPB009N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	1000	1:$3.3200 10:$2.8200 100:$2.4400 250:$2.3200 500:$2.0800 1000:$1.7500 2000:$1.6600 5000:$1.6000
IPB009N03L G DISTI # 726-IPB009N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	424	1:$3.3200 10:$2.8200 100:$2.4400 250:$2.3200 500:$2.0800 1000:$1.7500 2000:$1.6600 5000:$1.6000
IPB009N03LGATMA1 DISTI # 7545406P	Infineon Technologies AG	MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL	899	500:£1.5200 250:£1.6900 50:£1.8700 10:£2.0500
IPB009N03LGATMA1 DISTI # 1775514	Infineon Technologies AG	MOSFET, N CH, 180A, 30V, PG-TO263-7 RoHS: Compliant	1886	500:£1.5300 250:£1.7000 100:£1.7900 10:£2.0600 1:£2.8800
IPB009N03LGATMA1 DISTI # 1775514	Infineon Technologies AG	MOSFET, N CH, 180A, 30V, PG-TO263-7 RoHS: Compliant	500	5000:$2.4100 2000:$2.5000 1000:$2.6400 500:$3.1300 250:$3.5000 100:$3.6800 10:$4.2500 1:$5.0000

관련 상품

영상	부분 #	설명
	Mfr.#: IPB009N03LGATMA1 OMO.#: OMO-IPB009N03LGATMA1	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB009N03L G OMO.#: OMO-IPB009N03L-G	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB009N03LGATMA1 OMO.#: OMO-IPB009N03LGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 180A TO263-7
	Mfr.#: IPB009N03L OMO.#: OMO-IPB009N03L-1190	신규 및 오리지널
	Mfr.#: IPB009N03L G OMO.#: OMO-IPB009N03L-G-1190	Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
	Mfr.#: IPB009N03LG OMO.#: OMO-IPB009N03LG-1190	MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL

유효성

재고:: 900
주문 시:: 2883
수량 입력:

IPB009N03LGATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$3.32~~; ~~US$3.32~~

10: ~~US$2.82~~; ~~US$28.20~~

100: ~~US$2.44~~; ~~US$244.00~~

250: ~~US$2.32~~; ~~US$580.00~~

500: ~~US$2.08~~; ~~US$1 040.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

IPB009N03LG 3
IPB00 4
IPB0 405
IPB 1339

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IPB009N03LGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes