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SI4866BDY-T1-GE3

SI4866BDY-T1-GE3
Mfr. #:
SI4866BDY-T1-GE3
제조사:
Vishay
설명:
MOSFET N-CH 12V 21.5A 8-SOIC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI4866BDY-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
비쉐이 실리콘
제품 카테고리
FET - 단일
시리즈
트렌치FETR
포장
Digi-ReelR 대체 패키징
부분 별칭
SI4866BDY-GE3
단위 무게
0.006596 oz
장착 스타일
SMD/SMT
패키지 케이스
8-SOIC (0.154", 3.90mm Width)
기술
시
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
8-SO
구성
하나의
FET형
MOSFET N-채널, 금속 산화물
파워맥스
4.45W
트랜지스터형
1 N-Channel
드레인-소스 전압 Vdss
12V
입력-커패시턴스-Ciss-Vds
5020pF @ 6V
FET 기능
기준
Current-Continuous-Drain-Id-25°C
21.5A (Tc)
Rds-On-Max-Id-Vgs
5.3 mOhm @ 12A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Charge-Qg-Vgs
80nC @ 4.5V
Pd 전력 손실
2.5 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
32 ns 9 ns
상승 시간
18 ns 12 ns
Vgs 게이트 소스 전압
8 V
Id-연속-드레인-전류
16.1 A
Vds-드레인-소스-고장-전압
12 V
Rds-On-Drain-Source-Resistance
5.3 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
85 ns 57 ns
일반 켜기 지연 시간
26 ns 13 ns
채널 모드
상승
Tags
SI4866, SI486, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4866BDY-T1-GE3 N-channel MOSFET Transistor; 21 A; 12 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 12 V 0.0053 Ohms Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 12V 21.5A 8-Pin SOIC N T/R
***et Europe
Trans MOSFET N-CH 12V 16.1A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N CH, 12V, 21.5A, SOIC-8
***i-Key
MOSFET N-CH 12V 21.5A 8-SOIC
***Components
TRANS MOSFET N-CH 12V 16.1AN
***
N-CHANNEL 12-V (D-S) MOSFET
***ark
Mosfet, N Channel, 12V, 21.5A, Soic-8; Transistor Polarity:n Channel; Continuous Drain Current Id:21.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.0042Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv Rohs Compliant: No
***nell
MOSFET, N CH, 12V, 21.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:21.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:4.45W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
부분 # 제조 설명 재고 가격
SI4866BDY-T1-GE3
DISTI # SI4866BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 12V 21.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.5527
SI4866BDY-T1-GE3
DISTI # SI4866BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 12V 21.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SI4866BDY-T1-GE3
    DISTI # SI4866BDY-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 12V 21.5A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI4866BDY-T1-GE3
      DISTI # SI4866BDY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 12V 16.1A 8-Pin SOIC N T/R (Alt: SI4866BDY-T1-GE3)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 2500:€0.8589
      • 5000:€0.6159
      • 10000:€0.4999
      • 15000:€0.4419
      • 25000:€0.4229
      SI4866BDY-T1-GE3
      DISTI # 69W7204      		Vishay IntertechnologiesMOSFET, N CHANNEL, 12V, 21.5A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes0
      • 1:$0.4720
      • 10:$0.4720
      • 25:$0.4720
      • 50:$0.4720
      • 100:$0.4720
      • 250:$0.4720
      • 500:$0.4720
      SI4866BDY-T1-GE3.
      DISTI # 30AC0172      		Vishay IntertechnologiesN-CHANNEL 12-V (D-S) MOSFET , ROHS COMPLIANT: NO0
        SI4866BDY-T1-GE3
        DISTI # 70616979        		Vishay SiliconixSI4866BDY-T1-GE3 N-channel MOSFET Transistor,21 A,12 V,8-Pin SOIC
        RoHS: Compliant        		0
        • 100:$1.0000
        • 200:$0.9800
        • 500:$0.9500
        • 1000:$0.9100
        • 2500:$0.8500
        SI4866BDY-T1-GE3
        DISTI # 781-SI4866BDY-T1-GE3        		Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs SO-8
        RoHS: Compliant        		1
        • 1:$1.4900
        • 10:$1.2300
        • 100:$0.9410
        • 500:$0.8090
        • 1000:$0.7110
        • 2500:$0.7100
        SI4866BDY-T1-GE3
        DISTI # 8181309P        		Vishay IntertechnologiesTRANS MOSFET N-CH 12V 16.1AN, RL50
        • 100:£0.6810
        • 500:£0.5850
        • 1500:£0.5300
        • 2500:£0.5190
        SI4866BDY-T1-GE3Vishay BLH 175
        • 4:$1.3125
        • 17:$0.8531
        • 60:$0.4922
        SI4866BDY-T1-GE3Vishay Intertechnologies 140
        • 70:$0.5250
        • 15:$0.8750
        • 1:$1.7500
        SI4866BDY-T1-GE3Vishay Siliconix 8
        • 3:$1.6564
        • 1:$2.0705
        SI4866BDY-T1-GE3
        DISTI # 2478955        		Vishay IntertechnologiesN CHANNEL MOSFET, 12V, 21.5A, SOIC, FULL
        RoHS: Compliant        		0
        • 2500:£0.6240
        SI4866BDY-T1-GE3
        DISTI # 2478955        		Vishay IntertechnologiesN CHANNEL MOSFET, 12V, 21.5A, SOIC, FULL REEL
        RoHS: Compliant        		0
        • 2500:$0.8750
        SI4866BDY-T1-GE3
        DISTI # 2335321        		Vishay IntertechnologiesMOSFET, N CH, 12V, 21.5A, SOIC
        RoHS: Compliant        		0
        • 1:$2.3700
        • 10:$1.9500
        • 100:$1.5000
        • 500:$1.2900
        • 1000:$1.1300
        • 2500:$1.1300
        SI4866DY-T1-E3Vishay IntertechnologiesMOSFET 12 Volt 11 Amp 3.0W
        RoHS: Compliant        		Americas -
          SI4866BDY-T1-GE3Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs SO-8
          RoHS: Compliant          		Americas -
            영상 부분 # 설명
            SI4866BDY-T1-GE3

            Mfr.#: SI4866BDY-T1-GE3

            OMO.#: OMO-SI4866BDY-T1-GE3

            		 MOSFET 12V Vds 8V Vgs SO-8
            SI4866BDY-T1-E3

            Mfr.#: SI4866BDY-T1-E3

            OMO.#: OMO-SI4866BDY-T1-E3-VISHAY

            		 MOSFET N-CH 12V 21.5A 8-SOIC
            SI4866BDY-T1-GE3

            Mfr.#: SI4866BDY-T1-GE3

            OMO.#: OMO-SI4866BDY-T1-GE3-VISHAY

            		 MOSFET N-CH 12V 21.5A 8-SOIC
            유효성
            재고:
            Available
            주문 시:
            1000
            수량 입력:
            SI4866BDY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
            참고 가격(USD)
            수량
            단가
            내선 가격
            1
            US$0.74
            US$0.74
            10
            US$0.70
            US$7.01
            100
            US$0.66
            US$66.45
            500
            US$0.63
            US$313.80
            1000
            US$0.59
            US$590.60
            2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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