IRFHS8242TRPBF

IRFHS8242TRPBF
Mfr. #:
IRFHS8242TRPBF
제조사:
Infineon Technologies
설명:
MOSFET N-CH 25V 9.9A PQFN
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFHS8242TRPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IRFHS8242TRPBF 추가 정보
제품 속성
속성 값
제조사
국제 정류기
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
장착 스타일
SMD/SMT
패키지 케이스
PQFN-6
기술
채널 수
1 Channel
구성
싱글 퀸트 드레인 듀얼 소스
트랜지스터형
1 N-Channel
Pd 전력 손실
2.1 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
5.3 ns
상승 시간
19 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
9.9 A
Vds-드레인-소스-고장-전압
25 V
Vgs-th-Gate-Source-Threshold-Voltage
1.8 V
Rds-On-Drain-Source-Resistance
17 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
5.4 ns
일반 켜기 지연 시간
6.5 ns
Qg-Gate-Charge
4.3 nC
순방향 트랜스컨덕턴스-최소
19 S
Tags
IRFHS8242TRP, IRFHS82, IRFHS8, IRFHS, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 21 mOhm 4.3 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***ment14 APAC
N CH MOSFET, 25V, 9.9A, 6-PQFN; Transist; N CH MOSFET, 25V, 9.9A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:25V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:6
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Ultra Compact PQFN HEXFET® Power MOSFETs
Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. These Ultra Compact PQFN HEXFET® Power MOSFETs come in a 2x2mm package and are available in 20 V, 25 V and 30 V with standard or logic level gate drive. They utilize Infineon latest low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density.Learn More
Inductive Wireless Charging Solutions
Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.
부분 # 제조 설명 재고 가격
IRFHS8242TRPBF
DISTI # C1S327400181699
Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R
RoHS: Compliant
3950
  • 25:$0.1470
IRFHS8242TRPBF
DISTI # IRFHS8242TRPBF-ND
Infineon Technologies AGMOSFET N-CH 25V 9.9A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$0.1918
IRFHS8242TRPBF
DISTI # IRFHS8242TRPBF
Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRFHS8242TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.1399
  • 8000:$0.1389
  • 16000:$0.1389
  • 24000:$0.1379
  • 40000:$0.1379
IRFHS8242TRPBF
DISTI # IRFHS8242TRPBF
Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R (Alt: IRFHS8242TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
    IRFHS8242TRPBF
    DISTI # SP001554858
    Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R (Alt: SP001554858)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel
    Europe - 0
    • 4000:€0.2169
    • 8000:€0.1679
    • 16000:€0.1379
    • 24000:€0.1159
    • 40000:€0.1079
    IRFHS8242TRPBF
    DISTI # 13AC9104
    Infineon Technologies AGMOSFET, N-CH, 25V, 8.5A, PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation RoHS Compliant: Yes3473
    • 1:$0.4900
    • 10:$0.4070
    • 25:$0.3540
    • 50:$0.3010
    • 100:$0.2480
    • 250:$0.2290
    • 500:$0.2110
    • 1000:$0.1920
    IRFHS8242TRPBF.
    DISTI # 32AC0691
    Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:2.1W,No. of Pins:8Pins RoHS Compliant: Yes0
      IRFHS8242TRPBF
      DISTI # 70599963
      Infineon Technologies AGIRFHS8242TRPBF N-channel MOSFET Transistor,21 A,25 V,6-Pin PQFN
      RoHS: Compliant
      0
      • 100:$0.3700
      IRFHS8242TRPBFInfineon Technologies AGSingle N-Channel 25 V 21 mOhm 4.3 nC HEXFET Power Mosfet - PQFN 2 x 2 mm
      RoHS: Compliant
      4000Reel
      • 4000:$0.1410
      IRFHS8242TRPBFInternational Rectifier 
      RoHS: Not Compliant
      8000
      • 500:$0.1500
      • 1000:$0.1500
      • 100:$0.1600
      • 25:$0.1700
      • 1:$0.1800
      IRFHS8242TRPBF
      DISTI # 942-IRFHS8242TRPBF
      Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
      RoHS: Compliant
      5119
      • 1:$0.4900
      • 10:$0.4070
      • 100:$0.2480
      • 1000:$0.1920
      • 4000:$0.1640
      IRFHS8242TRPBFInternational Rectifier9.9A, 25V, 0.013OHM, N-CHANNEL, SI, POWER, MOSFET4
      • 1:$0.3800
      IRFHS8242TRPBF
      DISTI # 2725944
      Infineon Technologies AGMOSFET, N-CH, 25V, 8.5A, PQFN
      RoHS: Compliant
      3473
      • 1:$0.7750
      • 10:$0.6440
      • 100:$0.3930
      • 1000:$0.3040
      • 4000:$0.2600
      IRFHS8242TRPBF
      DISTI # 2725944
      Infineon Technologies AGMOSFET, N-CH, 25V, 8.5A, PQFN
      RoHS: Compliant
      3473
      • 5:£0.4420
      • 25:£0.1340
      • 100:£0.1310
      영상 부분 # 설명
      IRFHS8242TRPBF

      Mfr.#: IRFHS8242TRPBF

      OMO.#: OMO-IRFHS8242TRPBF

      MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
      IRFHS8242TRPBF-CUT TAPE

      Mfr.#: IRFHS8242TRPBF-CUT TAPE

      OMO.#: OMO-IRFHS8242TRPBF-CUT-TAPE-1190

      신규 및 오리지널
      IRFHS8242TR2PBF

      Mfr.#: IRFHS8242TR2PBF

      OMO.#: OMO-IRFHS8242TR2PBF-INFINEON-TECHNOLOGIES

      MOSFET N-CH 25V 9.9A PQFN
      IRFHS8242TRPBF.

      Mfr.#: IRFHS8242TRPBF.

      OMO.#: OMO-IRFHS8242TRPBF--1190

      Transistor Polarity:N Channel, Continuous Drain Current Id:8.5A, Drain Source Voltage Vds:25V, On Resistance Rds(on):0.01ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Diss
      IRFHS8242TRPBF

      Mfr.#: IRFHS8242TRPBF

      OMO.#: OMO-IRFHS8242TRPBF-INFINEON-TECHNOLOGIES

      MOSFET N-CH 25V 9.9A PQFN
      유효성
      재고:
      Available
      주문 시:
      2000
      수량 입력:
      IRFHS8242TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.16
      US$0.16
      10
      US$0.15
      US$1.48
      100
      US$0.14
      US$14.01
      500
      US$0.13
      US$66.15
      1000
      US$0.12
      US$124.60
      시작
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