BSC205N10LS G

Mfr. #:: BSC205N10LS G
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 100V 7.4A TDSON-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BSC205N10LS G 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TDSON-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 7.4 A

Rds On - 드레인 소스 저항:: 20.5 mOhms

Vgs - 게이트 소스 전압:: 20 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 76 W

구성:: 하나의

채널 모드:: 상승

상표명:: 옵티모스

포장:: 릴

키:: 1.27 mm

길이:: 5.9 mm

시리즈:: BSC205N10

트랜지스터 유형:: 1 N-Channel

너비:: 5.15 mm

상표:: 인피니언 테크놀로지스

가을 시간:: 4 ns

상품 유형:: MOSFET

상승 시간:: 24 ns

공장 팩 수량:: 5000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 30 ns

일반적인 켜기 지연 시간:: 14 ns

부품 번호 별칭:: BSC205N10LSGATMA1 SP000379616

Tags: BSC205N10LSG, BSC205, BSC20, BSC2, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

부분 #	제조	설명	재고	가격
BSC205N10LS G DISTI # BSC205N10LSGTR-ND	Infineon Technologies AG	MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
BSC205N10LS G DISTI # BSC205N10LSGCT-ND	Infineon Technologies AG	MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BSC205N10LS G DISTI # BSC205N10LSGDKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSC205N10LS G DISTI # 726-BSC205N10LSG	Infineon Technologies AG	MOSFET N-Ch 100V 7.4A TDSON-8 RoHS: Compliant	0
BSC205N10LSG	Infineon Technologies AG	Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	6751	1000:$0.5000 500:$0.5300 100:$0.5500 25:$0.5700 1:$0.6200
BSC205N10LS G	Infineon Technologies AG	RoHS: Not Compliant	10000	1000:$0.5000 500:$0.5300 100:$0.5500 25:$0.5700 1:$0.6200
BSC205N10LSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	10000	1000:$0.5700 500:$0.6000 100:$0.6300 25:$0.6600 1:$0.7100
BSC205N10LSG	Infineon Technologies AG	7.4 A, 100 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET	4899	3498:$0.4095 1642:$0.4290 1:$1.5600

관련 상품

영상	부분 #	설명
	Mfr.#: BSC205N10LS G OMO.#: OMO-BSC205N10LS-G	MOSFET N-Ch 100V 7.4A TDSON-8
	Mfr.#: BSC205N10LS OMO.#: OMO-BSC205N10LS-1190	신규 및 오리지널
	Mfr.#: BSC205N10LSG OMO.#: OMO-BSC205N10LSG-1190	Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC205N10LSGATMA1 OMO.#: OMO-BSC205N10LSGATMA1-1190	Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC205N10LS G OMO.#: OMO-BSC205N10LS-G-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 100V 7.4A TDSON-8