We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| FDD10N20LZTM DISTI # FDD10N20LZTMCT-ND | ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 105In Stock |
|
| FDD10N20LZTM DISTI # FDD10N20LZTMDKR-ND | ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 105In Stock |
|
| FDD10N20LZTM DISTI # FDD10N20LZTMTR-ND | ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| FDD10N20LZTM DISTI # V36:1790_06301285 | ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R | 0 | |
| FDD10N20LZTM DISTI # FDD10N20LZTM | ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 |
|
| FDD10N20LZTM DISTI # FDD10N20LZTM | ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD10N20LZTM) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| FDD10N20LZTM DISTI # FDD10N20LZTM | ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| FDD10N20LZTM DISTI # FDD10N20LZTM | ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FDD10N20LZTM) RoHS: Not Compliant Min Qty: 834 Container: Bulk | Americas - 0 |
|
| FDD10N20LZTM DISTI # 46AC0763 | ON Semiconductor | MOSFET, N-CH, 200V, 7.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes | 142 |
|
| FDD10N20LZTM DISTI # 27T6420 | ON Semiconductor | UF 200V 360MOHM L DPAK / REEL | 0 |
|
| FDD10N20LZTM DISTI # 512-FDD10N20LZTM | ON Semiconductor | MOSFET 200V N-Channel MOSFET, UniFET RoHS: Compliant | 3859 |
|
| FDD10N20LZTM | ON Semiconductor | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 4350 |
|
| FDD10N20LZTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 16566 |
|
| FDD10N20LZTM DISTI # 2825151 | ON Semiconductor | MOSFET, N-CH, 200V, 7.6A, TO-252-3 RoHS: Compliant | 10 |
|
| FDD10N20LZTM DISTI # 2825151 | ON Semiconductor | MOSFET, N-CH, 200V, 7.6A, TO-252-3 RoHS: Compliant | 0 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: FDD10N20LZTM OMO.#: OMO-FDD10N20LZTM |
MOSFET 200V N-Channel MOSFET, UniFET |
|
Mfr.#: FDD10010 OMO.#: OMO-FDD10010-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FDD107AN06AO OMO.#: OMO-FDD107AN06AO-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FDD107AN06LA0-NL OMO.#: OMO-FDD107AN06LA0-NL-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FDD107AN06LAO OMO.#: OMO-FDD107AN06LAO-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FDD10AN06 OMO.#: OMO-FDD10AN06-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FDD10AN06A OMO.#: OMO-FDD10AN06A-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FDD10AN06AD OMO.#: OMO-FDD10AN06AD-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FDD10N20LZ OMO.#: OMO-FDD10N20LZ-1190 |
신규 및 오리지널 |
|
Mfr.#: FDD10AN06A0-F085 |
MOSFET N-CH 60V 11A D-PAK |