CGHV60040D

Mfr. #:: CGHV60040D
제조사:: N/A
설명:: RF JFET Transistors DC-6GHz 40W GaN 50Volt
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGHV60040D 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: CGHV60040D 추가 정보

제품 속성
속성 값

제조사: 크리어/울프스피드

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

포장: 젤팩

장착 스타일: SMD/SMT

작동 온도 범위: -

패키지 케이스: 베어 다이

기술: GaN SiC

구성: 듀얼

트랜지스터형: 헴트

얻다: 18 dB

등급: -

출력 파워: 40 W

Pd 전력 손실: -

최대 작동 온도: -

최소 작동 온도: -

애플리케이션: -

동작 주파수: 6 GHz

Id-연속-드레인-전류: 3.2 A

Vds-드레인-소스-고장-전압: 50 V

Vgs-th-Gate-Source-Threshold-Voltage: -

Rds-On-Drain-Source-Resistance: -

트랜지스터 극성: N-채널

순방향 트랜스컨덕턴스-최소: -

개발 키트: -

Vgs-Gate-Source-Breakdown-Voltage: -

게이트 소스 차단 전압: -

최대 드레인 게이트 전압: -

NF-노이즈-피겨: -

P1dB-압축점: -

Tags: CGHV600, CGHV6, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV60040D 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

CGHV600 6GHz GaN HEMTs: Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.Learn More

Market price

부분 #	제조	설명	재고	가격
CGHV60040D-GP4 DISTI # CGHV60040D-GP4-ND	Wolfspeed	RF MOSFET HEMT 50V DIE RoHS: Compliant Min Qty: 10 Container: Tray	550In Stock	10:$42.3360
CGHV60040D DISTI # 941-CGHV60040D	Cree, Inc.	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt RoHS: Compliant	200	10:$42.3400

관련 상품

영상	부분 #	설명
	Mfr.#: CGHV60040D OMO.#: OMO-CGHV60040D	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
	Mfr.#: CGHV60075D5 OMO.#: OMO-CGHV60075D5	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
	Mfr.#: CGHV60170D OMO.#: OMO-CGHV60170D	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
	Mfr.#: CGHV60040D-GP4 OMO.#: OMO-CGHV60040D-GP4-WOLFSPEED	RF MOSFET HEMT 50V DIE
	Mfr.#: CGHV60075D5-GP4 OMO.#: OMO-CGHV60075D5-GP4-WOLFSPEED	RF POWER TRANSISTOR
	Mfr.#: CGHV60170D-GP4 OMO.#: OMO-CGHV60170D-GP4-WOLFSPEED	RF MOSFET HEMT 50V DIE
	Mfr.#: CGHV60040D OMO.#: OMO-CGHV60040D-318	RF JFET Transistors DC-6GHz 40W GaN 50Volt
	Mfr.#: CGHV60170D OMO.#: OMO-CGHV60170D-318	RF JFET Transistors DC-6GHz 170W GaN 50Volt
	Mfr.#: CGHV60075D5 OMO.#: OMO-CGHV60075D5-318	RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
	Mfr.#: CGHV60075D OMO.#: OMO-CGHV60075D-318	RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V