IRF7807D1TRPBF

Mfr. #:: IRF7807D1TRPBF
제조사:: Infineon / IR
설명:: MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF7807D1TRPBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF7807D1TRPBF Datasheet IRF7807D1TRPBF Datasheet (P4-P6)IRF7807D1TRPBF Datasheet (P7-P8)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 8.3 A

Rds On - 드레인 소스 저항:: 25 mOhms

Vgs - 게이트 소스 전압:: 12 V

Qg - 게이트 차지:: 10.5 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 2.5 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

키:: 1.75 mm

길이:: 4.9 mm

트랜지스터 유형:: 1 N-Channel

너비:: 3.9 mm

상표:: 인피니언 / IR

상품 유형:: MOSFET

공장 팩 수량:: 4000

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001565608

단위 무게:: 0.019048 oz

Tags: IRF7807D1, IRF7807D, IRF7807, IRF780, IRF78, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7807D1TRPBF 설명

***et Europe: Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R

***ernational Rectifier: 30V FETKY - MOSFET and Schottky Diode in a SO-8 package

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.3A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:4.5V; Leaded Process Compatible:Yes RoHS Compliant: Yes

***Yang: Transistor MOSFET Array Dual N-CH 30V 7.8A/8.9A 8-Pin SOIC T/R - Tape and Reel

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):17.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET

***ark: Mosfet Transistor, N Channel, 8.3 A, 30 V, 25 Mohm, 4.5 V, 1 V

*** Source Electronics: Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R / MOSFET N-CH 30V 8.3A 8-SOIC

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

***el Electronic: MURATA - GRM31CE70J476ME15L - Condensador de Cerámica Multicapa, 47 µF, 6.3 V, 1206 [Métrica 3216], ± 20%, X7U, Serie GRM

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissip

***Yang: Transistor MOSFET Array Dual N-CH 30V 6.4A/9.7A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 30 V 22.6 mOhm 4.6 nC HEXFET® Power Mosfet -SOIC-8

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET

***ark: MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14.4mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:8; Leaded Process Compatible:Yes; Package / Case:SO-8

***ure Electronics: Dual N-Channel 30 V 1.42 W 10.5 nC Enhancement Mode Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 10A Automotive 8-Pin SO T/R

***(Formerly Allied Electronics): Dual N-Channel Enhancement MOSFET SOIC8

***des Inc SCT: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 25±V VGS

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Electronics: MOSFET MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K

***ark: Drain Source Voltage Vds:30V; Continuous Drain Current Id:10A; Product Range:-; Automotive Qualification Standard:-; Msl:- Rohs Compliant: No

***et Europe: Transistor MOSFET Array Dual N-CH 30V 8A/9A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 30 V 22/15 mOhm Surface Mount STripFET MOSFET - SOIC-8

***ser: Power MOSFET Transistors Dual N Ch 30V 0.012Ohm 9A

***ical: Trans MOSFET N-CH 30V 8A/9A 8-Pin SO N T/R

***icroelectronics: Dual N-channel 30V - 0.012Y - 9A SO-8

***r Electronics: Power Field-Effect Transistor, 8A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 30V 8A Automotive 8-Pin SO T/R

***S: French Electronic Distributor since 1988

Market price

부분 #	제조	설명	재고	가격
IRF7807D1TRPBF DISTI # IRF7807D1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 8.3A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF7807D1TRPBF DISTI # IRF7807D1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 8.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF7807D1TRPBF DISTI # IRF7807D1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 8.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF7807D1TRPBF DISTI # 70018964	Infineon Technologies AG	30V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE RoHS: Compliant	0	1:$1.2200 2:$1.1960 5:$1.1590 10:$1.1100 25:$1.0370
IRF7807D1TRPBF DISTI # 942-IRF7807D1TRPBF	Infineon Technologies AG	MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC RoHS: Compliant	0
IRF7807D1TRPBF	International Rectifier		12	7:$0.6400 1:$0.8000

관련 상품

영상	부분 #	설명
	Mfr.#: IRF7807TRPBF OMO.#: OMO-IRF7807TRPBF	MOSFET MOSFT 30V 8.3A 25mOhm 12nC
	Mfr.#: IRF7807ZPBF OMO.#: OMO-IRF7807ZPBF	MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7.2nC
	Mfr.#: IRF7807D1TRPBF OMO.#: OMO-IRF7807D1TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 8.3A 8-SOIC
	Mfr.#: IRF7807TR , 2SJ84-R OMO.#: OMO-IRF7807TR-2SJ84-R-1190	신규 및 오리지널
	Mfr.#: IRF7807TRPBF(PB FREE) OMO.#: OMO-IRF7807TRPBF-PB-FREE--1190	신규 및 오리지널
	Mfr.#: IRF7807VPBF OMO.#: OMO-IRF7807VPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 8.3A 8-SOIC
	Mfr.#: IRF7807VPBF-1 OMO.#: OMO-IRF7807VPBF-1-1190	신규 및 오리지널
	Mfr.#: IRF7807Z OMO.#: OMO-IRF7807Z-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 11A 8-SOIC
	Mfr.#: IRF7807ZGPBF OMO.#: OMO-IRF7807ZGPBF-1190	신규 및 오리지널
	Mfr.#: IRF7807D2TRPBF OMO.#: OMO-IRF7807D2TRPBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC

유효성

재고:: Available
주문 시:: 1000
수량 입력:

IRF7807D1TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

IRF7807D1 4
IRF7807D 9
IRF7807 47
IRF780 80
IRF78 177
IRF7 1262
IRF 8615

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IRF7807D1TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes