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FQPF12N60C

FQPF12N60C
Mfr. #:
FQPF12N60C
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 600V N-Ch Q-FET advance C-Series
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FQPF12N60C 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
E
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
12 A
Rds On - 드레인 소스 저항:
650 mOhms
Vgs - 게이트 소스 전압:
30 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
51 W
구성:
하나의
채널 모드:
상승
포장:
튜브
키:
16.3 mm
길이:
10.67 mm
시리즈:
FQPF12N60C
트랜지스터 유형:
1 N-Channel
유형:
MOSFET
너비:
4.7 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
13 S
가을 시간:
90 ns
상품 유형:
MOSFET
상승 시간:
85 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
155 ns
일반적인 켜기 지연 시간:
30 ns
부품 번호 별칭:
FQPF12N60C_NL
단위 무게:
0.080072 oz
Tags
FQPF12N60C, FQPF12N60, FQPF12N6, FQPF12N, FQPF12, FQPF1, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220F
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail
***ark
N CH MOSFET, 600V, 12A, TO-220F
*** Source Electronics
MOSFET N-CH 600V 12A TO-220F
***inecomponents.com
600V N-Channel MOSFET QFET®
***ser
MOSFETs 600V N-Ch Q-FET advance C-Series
***nell
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:12A; Resistance, Rds On:0.65ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:48A; Power Dissipation:51W; Power, Pd:51W; Transistors, No. of:1; Voltage, Vds Max:600V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):650mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:51W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:51W; Power Dissipation Pd:51W; Pulse Current Idm:48A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
부분 # 제조 설명 재고 가격
FQPF12N60C
DISTI # V36:1790_06359253		ON SemiconductorLECH/600V/12A/QFET C-SERIES13
  • 10000:$0.8785
  • 5000:$0.9223
  • 2000:$0.9667
  • 1000:$1.0561
FQPF12N60C
DISTI # FQPF12N60C-ND		ON SemiconductorMOSFET N-CH 600V 12A TO-220F
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FQPF12N60CT
    DISTI # FQPF12N60CT-ND    		ON SemiconductorMOSFET N-CH 600V 12A TO-220F
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Limited Supply - Call
      FQPF12N60C
      DISTI # FQPF12N60C      		ON SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF12N60C)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tube      		Americas - 0
      • 1000:$1.0589
      • 2000:$1.0529
      • 4000:$1.0389
      • 6000:$1.0259
      • 10000:$1.0009
      FQPF12N60C
      DISTI # FQPF12N60C      		ON SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF12N60C)
      RoHS: Compliant
      Min Qty: 1      		Europe - 0
        FQPF12N60C
        DISTI # 512-FQPF12N60C        		ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
        RoHS: Compliant        		62
        • 1:$2.6200
        • 10:$2.2200
        • 100:$1.7800
        • 500:$1.5600
        • 1000:$1.2900
        • 2000:$1.2000
        • 5000:$1.1600
        FQPF12N60CT
        DISTI # 512-FQPF12N60CT        		ON SemiconductorMOSFET N-CH/600V/12A QFET C-Series
        RoHS: Compliant        		0
          FQPF12N60C
          DISTI # 1095081          		ON Semiconductor 
          RoHS: Compliant          		0
          • 1:$3.3900
          • 10:$2.8800
          • 100:$2.3200
          • 500:$2.0100
          • 1000:$1.6800
          • 2000:$1.6700
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          유효성
          재고:
          784
          주문 시:
          2767
          수량 입력:
          FQPF12N60C의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
          참고 가격(USD)
          수량
          단가
          내선 가격
          1
          US$2.62
          US$2.62
          10
          US$2.22
          US$22.20
          100
          US$1.78
          US$178.00
          500
          US$1.56
          US$780.00
          1000
          US$1.29
          US$1 290.00
          2000
          US$1.20
          US$2 400.00
          5000
          US$1.16
          US$5 800.00
          10000
          US$1.11
          US$11 100.00
          2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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