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SI7405BDN-T1-GE3
SI7405BDN-T1-GE3
SI7405BDN-T1-GE3SI7405BDN-T1-GE3
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SI7405BDN-T1-GE3

Mfr. #:
SI7405BDN-T1-GE3
제조사:
Vishay
설명:
MOSFET P-CH 12V 16A 1212-8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI7405BDN-T1-GE3 데이터 시트
ECAD Model:

유효성

재고:
Available
주문 시:
2000
수량 입력:
SI7405BDN-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

수량
단가
내선 가격
1
US$0.86
US$0.86
10
US$0.81
US$8.12
100
US$0.77
US$76.95
500
US$0.73
US$363.40
1000
US$0.68
US$684.00
제품 속성
속성 값
제조사
비쉐이 실리콘
제품 카테고리
FET - 단일
시리즈
트렌치FETR
포장
Digi-ReelR 대체 패키징
부분 별칭
SI7405BDN-GE3
장착 스타일
SMD/SMT
패키지 케이스
PowerPAKR 1212-8
기술
시
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
PowerPAKR 1212-8
구성
하나의
FET형
MOSFET P-채널, 금속 산화물
파워맥스
33W
트랜지스터형
1 P-Channel
드레인-소스 전압 Vdss
12V
입력-커패시턴스-Ciss-Vds
3500pF @ 6V
FET 기능
기준
Current-Continuous-Drain-Id-25°C
16A (Tc)
Rds-On-Max-Id-Vgs
13 mOhm @ 13.5A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Charge-Qg-Vgs
115nC @ 8V
Pd 전력 손실
3.6 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
45 ns
상승 시간
60 ns
Vgs 게이트 소스 전압
8 V
Id-연속-드레인-전류
13.5 A
Vds-드레인-소스-고장-전압
- 12 V
Rds-On-Drain-Source-Resistance
13 mOhms
트랜지스터 극성
P-채널
일반 꺼짐 지연 시간
80 ns
일반 켜기 지연 시간
22 ns
채널 모드
상승
Tags
SI7405B, SI7405, SI740, SI74, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI7405BDN-T1-GE3 P-channel MOSFET Transistor; 11 A; 12 V; 8-Pin PowerPAK 1212
***Components
Supplied as a Tape, SI7405BDN-T1-GE3 P-Channel MOSFET, 11 A, 12 V, 8-Pin PowerPAK 1212 Vishay
***ure Electronics
P-Channel 12 V 0.013 O 115 nC Surface Mount Power Mosfet - PowerPAK-1212-8
***et Europe
Trans MOSFET P-CH 12V 13.5A 8-Pin PowerPAK 1212 T/R
***ark
Transistor Polarity:P Channel
***
P-CHANNEL 12-V (D-S) MOSFET
***i-Key
MOSFET P-CH 12V 16A 1212-8
부분 # 제조 설명 재고 가격
SI7405BDN-T1-GE3
DISTI # SI7405BDN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 12V 16A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3733In Stock
  • 1000:$0.6118
  • 500:$0.7750
  • 100:$0.9993
  • 10:$1.2640
  • 1:$1.4300
SI7405BDN-T1-GE3
DISTI # SI7405BDN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 12V 16A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI7405BDN-T1-GE3
    DISTI # SI7405BDN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET P-CH 12V 16A 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI7405BDN-T1-GE3
      DISTI # 09X6447      		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -16A, POWERPAK-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-16A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes0
        SI7405BDN-T1-GE3.
        DISTI # 16AC0268        		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-16A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:33W,No. of Pins:8Pins , RoHS Compliant: No0
          SI7405BDN-T1-GE3
          DISTI # 70617000          		Vishay SiliconixSI7405BDN-T1-GE3 P-channel MOSFET Transistor,11 A,12 V,8-Pin PowerPAK 1212
          RoHS: Compliant          		0
          • 300:$0.7400
          • 600:$0.7250
          • 1500:$0.7030
          • 3000:$0.6730
          • 7500:$0.6290
          SI7405BDN-T1-GE3
          DISTI # 781-SI7405BDN-T1-GE3          		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs PowerPAK 1212-8
          RoHS: Compliant          		0
            SI7405BDN-T1-GE3Vishay Intertechnologies 1627
              SI7405BDN-T1-GE3
              DISTI # 8181400P              		Vishay IntertechnologiesTRANS MOSFET P-CH 12V 13.5AN, RL1680
              • 100:£0.5340
              • 400:£0.4710
              • 1000:£0.4310
              영상 부분 # 설명
              SI7405BDN-T1-E3

              Mfr.#: SI7405BDN-T1-E3

              OMO.#: OMO-SI7405BDN-T1-E3-VISHAY

              		 RF Bipolar Transistors MOSFET 12V 16A 33W 13mohm @ 4.5V
              SI7405BDN

              Mfr.#: SI7405BDN

              OMO.#: OMO-SI7405BDN-1190

              		 신규 및 오리지널
              SI7405BDN-T1-GE3

              Mfr.#: SI7405BDN-T1-GE3

              OMO.#: OMO-SI7405BDN-T1-GE3-VISHAY

              		 MOSFET P-CH 12V 16A 1212-8
              시작
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