STGW80V60DF

STGW80V60DF
Mfr. #:
STGW80V60DF
제조사:
STMicroelectronics
설명:
IGBT 600V 120A 469W TO247
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGW80V60DF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGW80V60DF 추가 정보 STGW80V60DF Product Details
제품 속성
속성 값
제조사
ST마이크로일렉트로닉스
제품 카테고리
IGBT - 싱글
시리즈
600-650V IGBTs
포장
튜브
단위 무게
1.340411 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3 Exposed Pad
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
TO-247
구성
하나의
파워맥스
469W
역복구-시간-trr
60ns
전류 수집기 Ic-Max
120A
Voltage-Collector-Emitter-Breakdown-Max
600V
IGBT형
트렌치 필드 스톱
전류 수집기 펄스 Icm
240A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 80A
스위칭 에너지
1.8mJ (on), 1mJ (off)
게이트 차지
448nC
Td-on-off-25°C
60ns/220ns
시험조건
400V, 80A, 5 Ohm, 15V
Pd 전력 손실
469 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
컬렉터-이미터-전압-VCEO-최대
600 V
컬렉터-이미터-포화-전압
1.85 V
연속 수집기 전류 at-25-C
120 A
게이트 이미 터 누설 전류
250 nA
최대 게이트 이미 터 전압
20 V
연속 수집기 전류 Ic-Max
80 A
Tags
STGW80, STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247
***ure Electronics
V Series 600 V 80 A Flange Mount Trench Gate Field-Stop IGBT - TO-247
***p One Stop Japan
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 600V 120A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 600V 80A High-Speed TO247
***ronik
IGBT 600V 80A 1,85V TO247-3
***i-Key
IGBT 600V 120A 469W TO247
***ark
Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 600V, 120A, TO-247-3; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:V Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
IGBT, SINGOLO, 600V, 120A, TO-247-3; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.85V; Dissipazione di Potenza Pd:469W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:V Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
부분 # 제조 설명 재고 가격
STGW80V60DF
DISTI # 30607178
STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
1280
  • 1200:$4.3223
  • 100:$4.9215
  • 50:$5.4188
  • 10:$5.4698
  • 5:$6.0435
STGW80V60DF
DISTI # 497-14058-5-ND
STMicroelectronicsIGBT 600V 120A 469W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
596In Stock
  • 1020:$4.0500
  • 510:$4.6500
  • 120:$5.3400
  • 30:$6.1500
  • 1:$7.1400
STGW80V60DF
DISTI # V36:1790_06560792
STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW80V60DF
    DISTI # STGW80V60DF
    STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-247 Tube (Alt: STGW80V60DF)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 250:€3.8000
    • 100:€4.3800
    • 50:€4.7100
    • 10:€5.0500
    • 5:€5.6600
    • 1:€6.2600
    STGW80V60DF
    DISTI # STGW80V60DF
    STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80V60DF)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 6000:$3.7900
    • 3600:$3.8900
    • 2400:$3.9900
    • 1200:$4.1900
    • 600:$4.3900
    STGW80V60DF
    DISTI # 98Y2478
    STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-247-3,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes559
    • 500:$4.7000
    • 250:$5.1600
    • 100:$5.3900
    • 50:$5.8100
    • 25:$6.2200
    • 10:$6.5200
    • 1:$7.2100
    STGW80V60DF
    DISTI # 511-STGW80V60DF
    STMicroelectronicsIGBT Transistors Trench gate V series 600V 80A HiSpd
    RoHS: Compliant
    714
    • 1:$7.1400
    • 10:$6.4600
    • 25:$6.1600
    • 100:$5.3400
    • 250:$5.1100
    • 500:$4.6500
    STGW80V60DF
    DISTI # 7925827P
    STMicroelectronicsIGBT N-CH 600V 80A HIGH-SPEED TO247, TU315
    • 250:£3.6900
    • 50:£4.4600
    • 20:£4.5700
    • 10:£4.6700
    STGW80V60DF
    DISTI # 2629742
    STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-247-3
    RoHS: Compliant
    559
    • 1020:$6.1500
    • 510:$7.0500
    • 120:$8.0900
    • 30:$9.3300
    • 1:$10.8200
    STGW80V60DF
    DISTI # 2629742
    STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-247-3559
    • 100:£3.8400
    • 50:£4.1300
    • 10:£4.4300
    • 5:£5.1300
    • 1:£5.9300
    영상 부분 # 설명
    STGW8M120DF3

    Mfr.#: STGW8M120DF3

    OMO.#: OMO-STGW8M120DF3

    IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
    STGW80V60DF

    Mfr.#: STGW80V60DF

    OMO.#: OMO-STGW80V60DF

    IGBT Transistors Trench gate V series 600V 80A HiSpd
    STGW80H65DFB-4

    Mfr.#: STGW80H65DFB-4

    OMO.#: OMO-STGW80H65DFB-4

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
    STGW80H65FB

    Mfr.#: STGW80H65FB

    OMO.#: OMO-STGW80H65FB

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
    STGW80H65DFB

    Mfr.#: STGW80H65DFB

    OMO.#: OMO-STGW80H65DFB

    IGBT Transistors Trench gte FieldStop IGBT 650V 80A
    STGW80H65FB-4

    Mfr.#: STGW80H65FB-4

    OMO.#: OMO-STGW80H65FB-4

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
    STGW80V60F

    Mfr.#: STGW80V60F

    OMO.#: OMO-STGW80V60F

    IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
    STGW80H65FB-4

    Mfr.#: STGW80H65FB-4

    OMO.#: OMO-STGW80H65FB-4-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    STGW80V60F

    Mfr.#: STGW80V60F

    OMO.#: OMO-STGW80V60F-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    STGW8M120DF3

    Mfr.#: STGW8M120DF3

    OMO.#: OMO-STGW8M120DF3-STMICROELECTRONICS

    TRENCH GATE FIELD-STOP IGBT M SE
    유효성
    재고:
    Available
    주문 시:
    5000
    수량 입력:
    STGW80V60DF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$5.68
    US$5.68
    10
    US$5.40
    US$54.01
    100
    US$5.12
    US$511.65
    500
    US$4.83
    US$2 416.15
    1000
    US$4.55
    US$4 548.00
    시작
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