OMO ElectronicOMO Electronic
Expand menu
0 카트

STGW35NB60SD

STGW35NB60SD
Mfr. #:
STGW35NB60SD
제조사:
STMicroelectronics
설명:
IGBT Transistors N Ch 35A 600V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGW35NB60SD 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STGW35NB60SD DatasheetSTGW35NB60SD Datasheet (P4-P6)STGW35NB60SD Datasheet (P7-P9)STGW35NB60SD Datasheet (P10-P12)STGW35NB60SD Datasheet (P13)
ECAD Model:
추가 정보:
STGW35NB60SD 추가 정보 STGW35NB60SD Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
최대 게이트 이미터 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
STGW35NB60SD
포장:
튜브
연속 수집가 현재 IC 최대:
70 A
키:
20.15 mm
길이:
15.75 mm
너비:
5.15 mm
상표:
ST마이크로일렉트로닉스
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
600
하위 카테고리:
IGBT
상표명:
파워메시
단위 무게:
1.340411 oz
Tags
STGW35NB, STGW35N, STGW35, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC
***el Electronic
STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
***nell
IGBT, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***(Formerly Allied Electronics)
STGW30NC60WD,IGBT Ultrafast 600V 30A
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
***nell
IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW45HF Series 600 V 45 A Ultra Fast IGBT Flange Mount - TO-247
***icroelectronics
45 A, 600 V ultrafast IGBT with ultrafast diode
***nell
IGBT, SINGLE, 600V, 70A, TO-247; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: HF Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***ark
IGBT Single Transistor, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 RoHS Compliant: Yes
***ical
Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail
***ource
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode60A, 600V, UFS N
***nell
IGBT,N CH,600V,30A,TO-247.; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins
***rchild Semiconductor
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
***ical
Trans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-247 Rail
***ark
Insulated-Gate Bipolar Transistor (IGBT); Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:290W ;RoHS Compliant: Yes
***rchild Semiconductor
The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
부분 # 제조 설명 재고 가격
STGW35NB60SD
DISTI # 497-16202-5-ND		STMicroelectronicsIGBT 600V 70A 200W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$3.4860
  • 510:$4.0593
  • 120:$4.6988
  • 30:$5.3603
  • 1:$6.2400
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW35NB60SD)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 138
  • 1:€4.6900
  • 10:€3.9900
  • 25:€3.9900
  • 50:€3.9900
  • 100:€3.2900
  • 500:€2.8900
  • 1000:€2.4900
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW35NB60SD)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$3.0900
  • 1200:$2.9900
  • 2400:$2.7900
  • 3600:$2.6900
  • 6000:$2.5900
STGW35NB60SD
DISTI # 511-STGW35NB60SD		STMicroelectronicsIGBT Transistors N Ch 35A 600V
RoHS: Compliant		0
  • 1:$5.5500
  • 10:$4.7200
  • 100:$4.0900
  • 250:$3.8800
  • 500:$3.4800
  • 1000:$2.9400
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTransistor: IGBT,600V,35A,200W,TO247-348
  • 1:$4.9500
  • 3:$4.2600
  • 10:$3.4300
  • 30:$3.0800
STGW35NB60SD
DISTI # 1293658		STMicroelectronicsIGBT, TO-247
RoHS: Compliant		18
  • 2500:$4.4400
  • 1000:$4.6600
  • 500:$5.5300
  • 250:$6.1600
  • 100:$6.4900
  • 10:$7.4900
  • 1:$8.8000
STGW35NB60SD
DISTI # 1293658		STMicroelectronicsIGBT, TO-247
RoHS: Compliant		18
  • 100:£3.6800
  • 10:£4.2500
  • 1:£5.5400
영상 부분 # 설명
TS391ILT

Mfr.#: TS391ILT

OMO.#: OMO-TS391ILT

 Analog Comparators Lo-Pwr Sngl Voltage
TD350E

Mfr.#: TD350E

OMO.#: OMO-TD350E

 Gate Drivers Advanced IGBT/MOSFET driver
TS3431BILT

Mfr.#: TS3431BILT

OMO.#: OMO-TS3431BILT

 Voltage References 1.24V Prog Shunt
BAT48JFILM

Mfr.#: BAT48JFILM

OMO.#: OMO-BAT48JFILM

 Schottky Diodes & Rectifiers schottky diode
STM32F103ZGT6

Mfr.#: STM32F103ZGT6

OMO.#: OMO-STM32F103ZGT6

 ARM Microcontrollers - MCU ARM Cortex M3 32-Bit 1Mbyte Flash 72 MHz
STEVAL-IHM028V2

Mfr.#: STEVAL-IHM028V2

OMO.#: OMO-STEVAL-IHM028V2

 Power Management IC Development Tools 2 kW 3-phase motor control evaluation board featuring the STGIPS20C60 IGBT intelligent power module
ERJ-3LWFR005V

Mfr.#: ERJ-3LWFR005V

OMO.#: OMO-ERJ-3LWFR005V

 Current Sense Resistors - SMD 0603 5mOhms 1% Curr Sens AEC-Q200
C1005X7R1H103K050BE

Mfr.#: C1005X7R1H103K050BE

OMO.#: OMO-C1005X7R1H103K050BE

 Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0402 50V 0.01uF X7R 10% T: 0.5mm
TS3431BILT

Mfr.#: TS3431BILT

OMO.#: OMO-TS3431BILT-STMICROELECTRONICS

 IC VREF SHUNT ADJ SOT23-3
TS391ILT

Mfr.#: TS391ILT

OMO.#: OMO-TS391ILT-STMICROELECTRONICS

 Analog Comparators Lo-Pwr Sngl Voltage
유효성
재고:
Available
주문 시:
1984
수량 입력:
STGW35NB60SD의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$5.55
US$5.55
10
US$4.72
US$47.20
100
US$4.09
US$409.00
250
US$3.88
US$970.00
500
US$3.48
US$1 740.00
1000
US$2.94
US$2 940.00
시작
최신 제품
More Newest Products
Top