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STGW40H120DF2

STGW40H120DF2
Mfr. #:
STGW40H120DF2
제조사:
STMicroelectronics
설명:
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGW40H120DF2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGW40H120DF2 추가 정보 STGW40H120DF2 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
2.1 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
80 A
Pd - 전력 손실:
468 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
STGW40H120DF2
포장:
튜브
연속 수집가 현재 IC 최대:
40 A
상표:
ST마이크로일렉트로닉스
게이트-이미터 누설 전류:
250 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
600
하위 카테고리:
IGBT
단위 무게:
1.340411 oz
Tags
STGW40H1, STGW40H, STGW40, STGW4, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW40H120 Series 1200 V 40 A High Speed Trench Gate Field-Stop IGBT - TO-247
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube
***ronik
IGBT 1200V 80A 2.1V TO247-3
***i-Key
IGBT 1200V 40A HS TO-247
***ark
IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:468W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:468W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:H Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT, SINGOLO, 1.2KV, 80A, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):2.1V; Dissipazione di Potenza Pd:468W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:H Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
부분 # 제조 설명 재고 가격
STGW40H120DF2
DISTI # 32904011		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		570
  • 570:$5.6034
STGW40H120DF2
DISTI # 497-14715-5-ND		STMicroelectronicsIGBT 1200V 40A HS TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		513In Stock
  • 510:$6.6727
  • 120:$7.6629
  • 30:$8.8253
  • 10:$9.2560
  • 1:$10.2500
STGW40H120DF2
DISTI # V36:1790_06560761		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    STGW40H120DF2
    DISTI # STGW40H120DF2    		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: STGW40H120DF2)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€4.3900
    • 500:€4.7900
    • 100:€4.8900
    • 50:€5.0900
    • 25:€5.2900
    • 10:€5.5900
    • 1:€6.0900
    STGW40H120DF2
    DISTI # STGW40H120DF2    		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW40H120DF2)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 6000:$5.1900
    • 3600:$5.2900
    • 2400:$5.4900
    • 1200:$5.7900
    • 600:$6.0900
    STGW40H120DF2
    DISTI # 45AC7604    		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7604)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 500:$7.1000
    • 250:$7.7000
    • 100:$8.0100
    • 50:$8.5600
    • 25:$9.0900
    • 10:$9.4900
    • 1:$10.4000
    STGW40H120DF2
    DISTI # 45AC7604    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2.1V,Power Dissipation Pd:468W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes55
    • 250:$5.6600
    • 500:$5.6600
    • 10:$6.1300
    • 25:$6.1300
    • 50:$6.1300
    • 100:$6.1300
    • 1:$6.6900
    STGW40H120DF2
    DISTI # 511-STGW40H120DF2    		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
    RoHS: Compliant    		582
    • 1:$9.7500
    • 10:$8.8100
    • 25:$8.4000
    • 100:$7.2900
    • 250:$6.9700
    • 500:$6.3500
    STGW40H120DF2
    DISTI # 2807176    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247
    RoHS: Compliant    		2378
    • 510:$10.1100
    • 120:$11.6100
    • 30:$13.3800
    • 1:$15.5300
    STGW40H120DF2
    DISTI # 2807176    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-2472378
    • 100:£5.6800
    • 50:£6.1100
    • 10:£6.5400
    • 5:£7.5900
    • 1:£8.1700
    STGW40H120DF2
    DISTI # XSKDRABV0046907    		STMicroelectronicsArray/NetworkResistor,Isolated,MetalGlaze/thickFilm, 33ohm, 25V,1%+/-Tol,200ppm/Cel,SurfaceMount, 0408
    RoHS: Compliant    		290 in Stock0 on Order
    • 290:$8.5440
    • 90:$9.1560
    STGW40H120DF2
    DISTI # IGBT1410    		STMicroelectronicsIGBT 1200V80A2.1VTO247-3Stock DE - 236Stock HK - 0Stock US - 0
    • 30:$6.6900
    • 60:$6.2700
    • 90:$6.1700
    • 120:$6.0700
    • 180:$5.7100
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    유효성
    재고:
    556
    주문 시:
    2539
    수량 입력:
    STGW40H120DF2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$9.75
    US$9.75
    10
    US$8.81
    US$88.10
    25
    US$8.40
    US$210.00
    100
    US$7.29
    US$729.00
    250
    US$6.97
    US$1 742.50
    500
    US$6.35
    US$3 175.00
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