FGA20N120FTDTU

Mfr. #:: FGA20N120FTDTU
제조사:: ON Semiconductor
설명:: IGBT 1200V 40A 298W TO3PN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FGA20N120FTDTU 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: FGA20N120FTDTU 추가 정보

제품 속성
속성 값

제조사: 페어차일드 반도체

제품 카테고리: IGBT - 싱글

시리즈: -

포장: 튜브

단위 무게: 0.225789 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-3P-3, SC-65-3

입력 유형: 기준

장착형: 구멍을 통해

공급자-장치-패키지: TO-3PN

구성: 하나의

파워맥스: 298W

역복구-시간-trr: 447ns

전류 수집기 Ic-Max: 40A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT형: 트렌치 필드 스톱

전류 수집기 펄스 Icm: 60A

Vce-on-Max-Vge-Ic: 2V @ 15V, 20A

스위칭 에너지: -

게이트 차지: 137nC

Td-on-off-25°C: -

시험조건: -

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

컬렉터-이미터-전압-VCEO-최대: 1200 V

최대 게이트 이미 터 전압: +/- 25 V

연속 수집기 전류 Ic-Max: 40 A

Tags: FGA20N120FT, FGA20N120F, FGA20N, FGA20, FGA2, FGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA20N120FTDTU 추가 정보

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Field Stop Trench IGBTs: ON Semiconductor's FGA20N120FTD and FGA15N120FTD 1200V field stop trench IGBTs maximize efficiency by limiting conduction and switching losses. The devices include a built-in fast-recovery diode (FRD) optimized for zero voltage switching technology and high avalanche capability for extended operational life. The devices' field stop structure and advanced Trench gate cell design enable tight parameter distribution for reduced performance variation.

Market price

부분 #	제조	설명	재고	가격
FGA20N120FTDTU DISTI # V99:2348_06358976	ON Semiconductor	N-CH / 20A 1200V FS TRENCH IGB	900	1000:$2.2550 500:$2.6429 100:$3.1070 10:$3.5820 1:$4.6211
FGA20N120FTDTU DISTI # V36:1790_06358976	ON Semiconductor	N-CH / 20A 1200V FS TRENCH IGB	0
FGA20N120FTDTU DISTI # FGA20N120FTDTUFS-ND	ON Semiconductor	IGBT 1200V 40A 298W TO3PN RoHS: Compliant Min Qty: 1 Container: Tube	2684In Stock	2700:$2.2400 900:$2.7888 450:$3.1080 25:$3.7800 10:$3.9980 1:$4.4500
FGA20N120FTDTU DISTI # 31011290	ON Semiconductor	N-CH / 20A 1200V FS TRENCH IGB	900	1000:$2.4241 500:$2.8411 100:$3.3368 10:$3.8506 3:$4.5160
FGA20N120FTDTU DISTI # 33145128	ON Semiconductor	N-CH / 20A 1200V FS TRENCH IGB	900	450:$3.2175
FGA20N120FTDTU DISTI # FGA20N120FTDTU	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA20N120FTDTU) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.7900 500:€1.8900 100:€1.9900 50:€2.0900 25:€2.1900 10:€2.2900 1:€2.4900
FGA20N120FTDTU DISTI # FGA20N120FTDTU	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail - Bulk (Alt: FGA20N120FTDTU) Min Qty: 1 Container: Bulk	Americas - 0
FGA20N120FTDTU DISTI # FGA20N120FTDTU	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA20N120FTDTU) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	4500:$1.8900 450:$1.9900 900:$1.9900 1800:$1.9900 2700:$1.9900
FGA20N120FTDTU DISTI # 84M7989	ON Semiconductor	TRANSISTOR,IGBT,N-CHAN+DIODE,1.2kV V(BR)CES,40A I(C),TO-247var	0	10000:$2.1600 2500:$2.2900 1000:$2.4000 500:$2.8200 100:$3.1200 10:$3.7600 1:$4.6400
FGA20N120FTDTU DISTI # 512-FGA20N120FTDTU	ON Semiconductor	IGBT Transistors 1200V N-Chan Trench RoHS: Compliant	1054	1:$4.2300 10:$3.6000 100:$3.1200 250:$2.9600 500:$2.6500
FGA20N120FTDTU DISTI # 6715391	ON Semiconductor	TRANSISTOR IGBT N-CH 1.2KV 40A TO-3P(N), EA	381	500:£1.5600 250:£1.6100 100:£1.6900 25:£1.9500 1:£3.4400
FGA20N120FTDTU DISTI # 6715391P	ON Semiconductor	TRANSISTOR IGBT N-CH 1.2KV 40A TO-3P(N), TU	472	500:£1.5600 250:£1.6100 100:£1.6900 25:£1.9500
FGA20N120FTDTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	Europe - 450

영상	부분 #	설명
	Mfr.#: FGA20N120FTDTU OMO.#: OMO-FGA20N120FTDTU	IGBT Transistors 1200V N-Chan Trench
	Mfr.#: FGA20N120FTDTU OMO.#: OMO-FGA20N120FTDTU-ON-SEMICONDUCTOR	IGBT 1200V 40A 298W TO3PN
	Mfr.#: FGA20N120 OMO.#: OMO-FGA20N120-1190	신규 및 오리지널
	Mfr.#: FGA20N120ANTD OMO.#: OMO-FGA20N120ANTD-1190	신규 및 오리지널
	Mfr.#: FGA20N120FD OMO.#: OMO-FGA20N120FD-1190	신규 및 오리지널
	Mfr.#: FGA20N120FTD OMO.#: OMO-FGA20N120FTD-1190	- Bulk (Alt: FGA20N120FTD)
	Mfr.#: FGA20N120FTDTU,FGA20N120 OMO.#: OMO-FGA20N120FTDTU-FGA20N120-1190	신규 및 오리지널
	Mfr.#: FGA20N120TND OMO.#: OMO-FGA20N120TND-1190	신규 및 오리지널

FGA20N120FTDTU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes