NTP75N03-006

Mfr. #:: NTP75N03-006
제조사:: ON Semiconductor
설명:: MOSFET N-CH 30V 75A TO220AB
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NTP75N03-006 데이터 시트
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HTML Datasheet:: NTP75N03-006 Datasheet NTP75N03-006 Datasheet (P4-P6)NTP75N03-006 Datasheet (P7)
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제품 속성
속성 값

제조사: O

제품 카테고리: FET - 단일

Tags: NTP75N03, NTP75N, NTP75, NTP7, NTP

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Vacuum Packaging with PL

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NTP75N03-006 설명

***et: Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Rail

***ser: MOSFETs- Power and Small Signal 30V 75A N-Channel No-Cancel/No-Return

***el Electronic: MOSFET N-CH 30V 75A TO220AB

***ure Electronics: Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 30V 92A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 75 W

***nell: MOSFET, N CH, 30V, 78A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 75W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 92A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V

***ark: RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET

***ical: Trans MOSFET N-CH 30V 16A Automotive 3-Pin(3+Tab) TO-220AB Tube

***emi: N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ

***ure Electronics: N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***ure Electronics: Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ark: MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V

***p One Stop Global: Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***emi: Power MOSFET 90 Amps, 24 Volts

***ser: MOSFETs- Power and Small Signal 24V 90A N-Channel

***r Electronics: Power Field-Effect Transistor, 90A I(D), 24V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 30 V 8.7 mOhm 36 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH Si 30V 150A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 140 W

***ment14 APAC: MOSFET, N CH, 30V, 78A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:150A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

Market price

부분 #	제조	설명	재고	가격
NTP75N03-006 DISTI # NTP75N03-006OS-ND	ON Semiconductor	MOSFET N-CH 30V 75A TO220AB RoHS: Not compliant Min Qty: 200 Container: Tube	Limited Supply - Call
NTP75N03-006	ON Semiconductor	RoHS: Not Compliant	6230	1000:$0.5300 500:$0.5500 100:$0.5800 25:$0.6000 1:$0.6500
NTP75N03-006 DISTI # 863-NTP75N03-006	ON Semiconductor	MOSFET 30V 75A N-Channel RoHS: Not compliant	0

영상	부분 #	설명
	Mfr.#: NTP75N03L09 OMO.#: OMO-NTP75N03L09	MOSFET 30V 75A N-Channel
	Mfr.#: NTP75N03HDL OMO.#: OMO-NTP75N03HDL-1190	신규 및 오리지널
	Mfr.#: NTP75N03-006 OMO.#: OMO-NTP75N03-006-ON-SEMICONDUCTOR	MOSFET N-CH 30V 75A TO220AB
	Mfr.#: NTP75N03-06G OMO.#: OMO-NTP75N03-06G-1190	신규 및 오리지널
	Mfr.#: NTP75N03-6G OMO.#: OMO-NTP75N03-6G-ON-SEMICONDUCTOR	MOSFET N-CH 30V 75A TO220AB
	Mfr.#: NTP75N03L09 OMO.#: OMO-NTP75N03L09-ON-SEMICONDUCTOR	MOSFET N-CH 30V 75A TO220AB
	Mfr.#: NTP75N03R OMO.#: OMO-NTP75N03R-ON-SEMICONDUCTOR	MOSFET N-CH 25V 9.7A TO220AB
	Mfr.#: NTP75N03RG OMO.#: OMO-NTP75N03RG-ON-SEMICONDUCTOR	MOSFET N-CH 25V 9.7A TO220AB
	Mfr.#: NTP75N06D OMO.#: OMO-NTP75N06D-1190	신규 및 오리지널
	Mfr.#: NTP75N06G OMO.#: OMO-NTP75N06G-ON-SEMICONDUCTOR	MOSFET N-CH 60V 75A TO220AB

NTP75N03-006

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes