A2G35S200-01SR3

Mfr. #:: A2G35S200-01SR3
제조사:: NXP Semiconductors
설명:: AIRFAST RF POWER GAN TRANSISTOR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: A2G35S200-01SR3 데이터 시트
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추가 정보:: A2G35S200-01SR3 추가 정보 A2G35S200-01SR3 Product Details

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Tags: A2G3, A2G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A2G35S200-01SR3 설명

***ark: AIRFAST RF POWER GAN TRANSISTOR, 3400-3600 MHZ, 40 W AVG., 48 V, REEL 13" Q1 NDP, TR

***W: RF Power Transistor,3400 to 3600 MHz, 180 W, Typ Gain in dB is 16.1 @ 3500 MHz, 48 V, GaN, SOT1828

***et: RF Power GaN Transistor 3400-3600MHz 32W 48V Airfast

A2G35S200-01SR3 추가 정보

NXP RF-IF Solutions: NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More

RF Power GaN Portfolio: NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.

Market price

부분 #	제조	설명	재고	가격
A2G35S200-01SR3 DISTI # 568-15206-1-ND	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	246In Stock	10:$134.7860 1:$141.4800
A2G35S200-01SR3 DISTI # 568-15206-6-ND	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR RoHS: Not compliant Min Qty: 1 Container: Digi-Reel®	246In Stock	10:$134.7860 1:$141.4800
A2G35S200-01SR3 DISTI # 568-15206-2-ND	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR RoHS: Not compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$123.4358
A2G35S200-01SR3 DISTI # 01AC8235	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR, 3400-3800 MHZ, 40 W AVG., 48 V	0	100:$116.0200 50:$123.4400 25:$125.3000 10:$127.1500 5:$130.8600 1:$134.5800
A2G35S200-01SR3 DISTI # 841-A2G35S200-01SR3	NXP Semiconductors	RF Amplifier A2G35S200-01S/CFM2F///REEL 13 Q1 NDP RoHS: Compliant	0	250:$139.2100

A2G35S200-01SR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes