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FS200R12PT4PBOSA1

FS200R12PT4PBOSA1
Mfr. #:
FS200R12PT4PBOSA1
제조사:
Infineon Technologies
설명:
IGBT Modules MEDIUM POWER ECONO
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FS200R12PT4PBOSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FS200R12PT4PBOSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
IGBT 모듈
RoHS:
Y
기술:
시
제품:
IGBT 실리콘 모듈
구성:
IGBT-인버터
컬렉터-이미터 전압 VCEO 최대:
1.2 kV
수집기-이미터 포화 전압:
1.75 V
25C에서 연속 수집기 전류:
200 A
게이트-이미터 누설 전류:
100 nA
Pd - 전력 손실:
20 mW
패키지/케이스:
130 mm x 103 mm x 20.55 mm
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
포장:
쟁반
상표:
인피니언 테크놀로지스
장착 스타일:
섀시 마운트
최대 게이트 이미터 전압:
20 V
상품 유형:
IGBT 모듈
공장 팩 수량:
6
하위 카테고리:
IGBT
부품 번호 별칭:
FS200R12PT4P SP001061018
Tags
FS200R12P, FS200R1, FS200R, FS200, FS20, FS2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOD IGBT MED PWR ECONO4-1
***et Europe
MEDIUM POWER ECONO
***ark
Igbt, Module, N-Ch, 1.2Kv, 200A; Transistor Polarity:n Channel; Dc Collector Current:200A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 200A; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoPACK 4 Series; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, MODULO, CA-N, 1.2KV, 200A; Polarità Transistor:Canale N; Corrente di Collettore CC:200A; Tensione Saturaz Collettore-Emettitore Vce(on):1.75V; Dissipazione di Potenza Pd:-; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EconoPACK 4 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material. | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; 2.5 kV AC 1min Insulation; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
EconoPACK™ 4 Power Modules
Infineon Technologies EconoPACK™ 4 Power Modules feature a rugged mechanical design with ultrasonic welded and injection-molded screw terminals. The EconoPACK™ 4 perfectly fits into the well-known Econo portfolio. The devices feature easy assembly with PressFIT control pins and screw power terminals for solderless connections. The modules have an optimized module layout for high-power densities.
부분 # 제조 설명 재고 가격
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1-ND		Infineon Technologies AGMOD IGBT MED PWR ECONO4-1
RoHS: Compliant
Min Qty: 6
Container: Tray		Temporarily Out of Stock
  • 6:$218.4350
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FS200R12PT4PBOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray		Americas - 0
  • 60:$185.2900
  • 36:$189.8900
  • 24:$194.6900
  • 12:$199.6900
  • 6:$202.3900
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Bulk (Alt: FS200R12PT4PBOSA1)
Min Qty: 2
Container: Bulk		Americas - 0
  • 20:$182.3900
  • 10:$185.6900
  • 6:$192.0900
  • 4:$199.3900
  • 2:$206.7900
FS200R12PT4PBOSA1
DISTI # SP001061018		Infineon Technologies AGMEDIUM POWER ECONO (Alt: SP001061018)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€181.4900
  • 500:€185.6900
  • 100:€191.2900
  • 50:€197.7900
  • 25:€204.6900
  • 10:€225.1900
  • 1:€278.5900
FS200R12PT4PBOSA1
DISTI # 726-FS200R12PT4PBOSA		Infineon Technologies AGIGBT Modules MEDIUM POWER ECONO
RoHS: Compliant		9
  • 1:$223.0400
  • 5:$217.6800
  • 10:$212.2700
  • 25:$209.2900
FS200R12PT4PBOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant		24
  • 1000:$188.9100
  • 500:$198.8500
  • 100:$207.0200
  • 25:$215.9000
  • 1:$232.5000
FS200R12PT4PBOSA1
DISTI # 2781257		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 200A
RoHS: Compliant		0
  • 5:$342.7700
  • 1:$355.4600
FS200R12PT4PBOSA1
DISTI # 2781257		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 200A0
  • 5:£169.0000
  • 1:£172.0000
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유효성
재고:
Available
주문 시:
1990
수량 입력:
FS200R12PT4PBOSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$223.04
US$223.04
5
US$217.68
US$1 088.40
10
US$212.27
US$2 122.70
25
US$209.29
US$5 232.25
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