IPI023NE7N3 G

IPI023NE7N3 G
Mfr. #:
IPI023NE7N3 G
제조사:
Infineon Technologies
설명:
IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPI023NE7N3 G 데이터 시트
배달:
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지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
OptiMOS 3
포장
튜브
부분 별칭
IPI023NE7N3GAKSA1 SP000641732
단위 무게
0.084199 oz
장착 스타일
구멍을 통해
상표명
옵티모스
패키지 케이스
I2PAK-3
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
300 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
가을철
22 ns
상승 시간
26 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
120 A
Vds-드레인-소스-고장-전압
75 V
Rds-On-Drain-Source-Resistance
2.3 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
70 nS
Qg-Gate-Charge
155 nC
Tags
IPI023, IPI02, IPI0, IPI
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 75V 120A 3-Pin TO-262 Tube
***i-Key
MOSFET N-CH 75V 120A TO262-3
부분 # 제조 설명 재고 가격
IPI023NE7N3 G
DISTI # IPI023NE7N3G-ND
Infineon Technologies AGMOSFET N-CH 75V 120A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IPI023NE7N3 G
    DISTI # 726-IPI023NE7N3G
    Infineon Technologies AGMOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
    RoHS: Compliant
    0
      IPI023NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Compliant
      6946
      • 1000:$2.3200
      • 500:$2.4500
      • 100:$2.5500
      • 25:$2.6600
      • 1:$2.8600
      IPI023NE7N3 GInfineon Technologies AG 
      RoHS: Not Compliant
      1500
      • 1000:$2.3200
      • 500:$2.4500
      • 100:$2.5500
      • 25:$2.6600
      • 1:$2.8600
      영상 부분 # 설명
      IPI023NE7N3 G

      Mfr.#: IPI023NE7N3 G

      OMO.#: OMO-IPI023NE7N3-G

      MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
      IPI023NE7N3

      Mfr.#: IPI023NE7N3

      OMO.#: OMO-IPI023NE7N3-1190

      신규 및 오리지널
      IPI023NE7N3G

      Mfr.#: IPI023NE7N3G

      OMO.#: OMO-IPI023NE7N3G-1190

      Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      IPI023NE7N3 G

      Mfr.#: IPI023NE7N3 G

      OMO.#: OMO-IPI023NE7N3-G-INFINEON-TECHNOLOGIES

      IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
      유효성
      재고:
      Available
      주문 시:
      5000
      수량 입력:
      IPI023NE7N3 G의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$2.98
      US$2.98
      10
      US$2.84
      US$28.36
      100
      US$2.69
      US$268.65
      500
      US$2.54
      US$1 268.65
      1000
      US$2.39
      US$2 388.00
      시작
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