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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SIA921EDJ-T1-GE3 DISTI # V72:2272_09216858 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 1 |
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| SIA921EDJ-T1-GE3 DISTI # V36:1790_09216858 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 0 |
|
| SIA921EDJ-T1-GE3 DISTI # SIA921EDJ-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2P-CH 20V 4.5A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 13770In Stock |
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| SIA921EDJ-T1-GE3 DISTI # SIA921EDJ-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2P-CH 20V 4.5A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 13770In Stock |
|
| SIA921EDJ-T1-GE3 DISTI # SIA921EDJ-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2P-CH 20V 4.5A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 12000In Stock |
|
| SIA921EDJ-T1-GE3 DISTI # 33258890 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant | 3000 |
|
| SIA921EDJ-T1-GE3 DISTI # SIA921EDJ-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA921EDJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
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| SIA921EDJ-T1-GE3 DISTI # SIA921EDJ-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA921EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
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| SIA921EDJ-T1-GE3 DISTI # 15R4844 | Vishay Intertechnologies | MOSFET Transistor Array, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes | 0 |
|
| SIA921EDJ-T1-GE3 DISTI # 63R6002 | Vishay Intertechnologies | MOSFET Transistor Array,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes | 0 |
|
| SIA921EDJ-T1-GE3. DISTI # 15AC4248 | Vishay Intertechnologies | Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1.4V,Power Dissipation Pd:7.8W RoHS Compliant: No | 0 |
|
| SIA921EDJ-T1-GE3 DISTI # 70616553 | Vishay Siliconix | SIA921EDJ-T1-GE3 Dual P-channel MOSFET Transistor,4.5 A,20 V,6-Pin SC-70 RoHS: Compliant | 0 |
|
| SIA921EDJ-T1-GE3 DISTI # 781-SIA921EDJ-GE3 | Vishay Intertechnologies | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant | 3398 |
|
| SIA921EDJ-T1-GE3 | Vishay Siliconix | 1000 | ||
| SIA921EDJ-T1-GE3 DISTI # 8141235P | Vishay Intertechnologies | TRANS MOSFET P-CH 20V 4.5A, RL | 400 |
|
| SIA921EDJT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SIA921EDJ-T1-GE3 | Vishay Intertechnologies | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant | Americas - |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: SIA921EDJ-T1-GE3 OMO.#: OMO-SIA921EDJ-T1-GE3 |
MOSFET -20V Vds 12V Vgs PowerPAK SC-70 |
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Mfr.#: SIA921EDJ-T4-GE3 OMO.#: OMO-SIA921EDJ-T4-GE3 |
MOSFET -20V Vds 12V Vgs PowerPAK SC-70 |
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Mfr.#: SIA921EDJ-T1-GE3 OMO.#: OMO-SIA921EDJ-T1-GE3-VISHAY |
MOSFET 2P-CH 20V 4.5A SC70-6 |
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Mfr.#: SIA921EDJ-T1/GE3 OMO.#: OMO-SIA921EDJ-T1-GE3-1190 |
신규 및 오리지널 |
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Mfr.#: SIA921EDJ-T4-GE3 OMO.#: OMO-SIA921EDJ-T4-GE3-VISHAY |
MOSFET 2P-CH 20V 4.5A SC70-6 |
|
Mfr.#: SIA921EDJT1GE3 OMO.#: OMO-SIA921EDJT1GE3-1190 |
Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |