TGF2979-SM

Mfr. #:: TGF2979-SM
제조사:: Qorvo
설명:: RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2979-SM 데이터 시트
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ECAD Model:
추가 정보:: TGF2979-SM 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 13 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 32 V

Vgs - 게이트 소스 항복 전압:: - 2.7 V

Id - 연속 드레인 전류:: 326 mA

출력 파워:: 6 W

최대 작동 온도:: + 225 C

Pd - 전력 손실:: 8.4 W

장착 스타일:: SMD/SMT

패키지/케이스:: QFN-16

포장:: 쟁반

구성:: 하나의

키:: 0.203 mm

길이:: 3 mm

동작 주파수:: DC to 12 GHz

유형:: GaN SiC HEMT

너비:: 3 mm

상표:: 코르보

채널 수:: 1 Channel

개발 키트:: TGF2977-SMEVB1

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1127257

단위 무게:: 0.002014 oz

Tags: TGF297, TGF29, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2979-SM 설명

***W: RF Power Transistor, DC- 12 GHz, 25 W, 11 dB, 32 V, GaN, Plastic , QFN

TGF2979-SM 추가 정보

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

TGF297x GaN RF Transistor: Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More

Market price

부분 #	제조	설명	재고	가격
TGF2979-SM DISTI # 772-TGF2979-SM	Qorvo	RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB RoHS: Compliant	95	1:$62.0000 25:$53.6200 100:$46.3800
TGF2979-SM-EVB DISTI # 772-TGF2979-SM-EVB	Qorvo	RF Development Tools RoHS: Compliant	0	1:$875.0000
1127378 DISTI # TGF2979-SM	Qorvo	RF POWER TRANSISTOR RoHS: Compliant	30	1:$38.2200

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