FDBL0260N100

FDBL0260N100
Mfr. #:
FDBL0260N100
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET N-Channel Power Trench MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDBL0260N100 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FDBL0260N100 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
H-PSOF-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
100 V
Id - 연속 드레인 전류:
200 A
Rds On - 드레인 소스 저항:
2.6 mOhms
Vgs th - 게이트 소스 임계 전압:
2 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
83 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
250 W
구성:
하나의
채널 모드:
상승
상표명:
파워트렌치
포장:
키:
2.4 mm
길이:
10.48 mm
시리즈:
FDBL0260N100
트랜지스터 유형:
1 N-Channel
너비:
9.9 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
170 S
가을 시간:
19 ns
상품 유형:
MOSFET
상승 시간:
34 ns
공장 팩 수량:
2000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
47 ns
일반적인 켜기 지연 시간:
26 ns
단위 무게:
0.029985 oz
Tags
FDBL02, FDBL0, FDBL, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel PowerTrench® MOSFET, 100V, 200A, 2.6mΩ
***ical
Trans MOSFET N-CH 100V 200A 9-Pin(8+Tab) TO-LL T/R
***ark
Mosfet, N-Ch, 100V, 200A, Mo-299A-8; Transistor Polarity:n Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0021Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Rohs Compliant: Yes
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
부분 # 제조 설명 재고 가격
FDBL0260N100
DISTI # V72:2272_14141736
ON SemiconductorN-CHANNEL POWER TRENCH MOSFET0
    FDBL0260N100
    DISTI # V36:1790_14141736
    ON SemiconductorN-CHANNEL POWER TRENCH MOSFET0
      FDBL0260N100
      DISTI # FDBL0260N100CT-ND
      ON SemiconductorMOSFET N-CH 100V 200A 8PSOF
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      Limited Supply - Call
        FDBL0260N100
        DISTI # FDBL0260N100DKR-ND
        ON SemiconductorMOSFET N-CH 100V 200A 8PSOF
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®
        Limited Supply - Call
          FDBL0260N100
          DISTI # FDBL0260N100TR-ND
          ON SemiconductorMOSFET N-CH 100V 200A 8PSOF
          RoHS: Compliant
          Min Qty: 2000
          Container: Tape & Reel (TR)
          Temporarily Out of Stock
          • 2000:$2.6204
          FDBL0260N100
          DISTI # FDBL0260N100
          ON SemiconductorN-CHANNEL POWER TRENCH MOSFET - Tape and Reel (Alt: FDBL0260N100)
          RoHS: Compliant
          Min Qty: 2000
          Container: Reel
          Americas - 0
          • 8000:$2.2900
          • 12000:$2.2900
          • 20000:$2.2900
          • 2000:$2.3900
          • 4000:$2.3900
          FDBL0260N100
          DISTI # 46AC0758
          ON SemiconductorMOSFET, N-CH, 100V, 200A, MO-299A-8,Transistor Polarity:N Channel,Continuous Drain Current Id:200A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes1931
          • 1000:$2.6500
          • 500:$3.1300
          • 250:$3.4900
          • 100:$3.6900
          • 50:$3.8800
          • 25:$4.0600
          • 10:$4.2500
          • 1:$5.0000
          FDBL0260N100
          DISTI # 512-FDBL0260N100
          ON SemiconductorMOSFET N-Channel Power Trench MOSFET
          RoHS: Compliant
          2137
          • 1:$4.9500
          • 10:$4.2100
          • 100:$3.6500
          • 250:$3.4600
          • 500:$3.1000
          • 1000:$2.6200
          • 2000:$2.4900
          FDBL0260N100
          DISTI # 2825149
          ON SemiconductorMOSFET, N-CH, 100V, 200A, MO-299A-8
          RoHS: Compliant
          1931
          • 1000:$3.8100
          • 500:$4.2100
          • 250:$4.7900
          • 100:$5.3300
          • 10:$6.1500
          • 1:$7.0500
          FDBL0260N100
          DISTI # 2825149
          ON SemiconductorMOSFET, N-CH, 100V, 200A, MO-299A-81935
          • 100:£3.3500
          • 10:£3.8600
          • 1:£5.0300
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          OMO.#: OMO-ADS1251U-2K5-TEXAS-INSTRUMENTS

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          유효성
          재고:
          Available
          주문 시:
          1984
          수량 입력:
          FDBL0260N100의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
          참고 가격(USD)
          수량
          단가
          내선 가격
          1
          US$4.95
          US$4.95
          10
          US$4.21
          US$42.10
          100
          US$3.65
          US$365.00
          250
          US$3.46
          US$865.00
          500
          US$3.10
          US$1 550.00
          1000
          US$2.62
          US$2 620.00
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