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GN2470K4-G

GN2470K4-G
Mfr. #:
GN2470K4-G
제조사:
Microchip Technology
설명:
IGBT Transistors 700V 3.5A IGBT
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
GN2470K4-G 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
GN2470K4-G 추가 정보 GN2470K4-G Product Details
제품 속성
속성 값
제조사:
마이크로칩
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-252 (DPAK)-3
장착 스타일:
SMD/SMT
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
700 V
최대 게이트 이미터 전압:
20 V
Pd - 전력 손실:
2.5 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
포장:
릴
연속 수집가 현재 IC 최대:
1 A
키:
2.39 mm
길이:
6.73 mm
너비:
6.1 mm
상표:
마이크로칩 기술
지속적인 수집가 전류:
1 A
습기에 민감한:
네
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
2000
하위 카테고리:
IGBT
Tags
GN247, GN24, GN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 700V 1A 2500mW 3-Pin(2+Tab) DPAK
***(Formerly Allied Electronics)
INSULATED GATE BIPOLAR TRANSISTOR, 700V, 3.5A3 DPAK T/R | Microchip Technology Inc. GN2470K4-G
***rochip
INSULATED GATE BIPOLAR TRANSISTOR 700V 3.5A
*** Electronic Components
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***enic
TO-252(DPAK)-3 Pre-ordered MCUs ROHS
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***nell
TRANSISTOR, IGBT, 600V, 12A, TO-252; DC Collector Current: 12A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 88W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP™ Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
The 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO252-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
***ure Electronics
H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252
***nell
IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ow.cn
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Igbt, Single, 600V, 12A, To-252; Dc Collector Current:12A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-252; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW
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Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
***emi
IGBT, 600V, 3A, Short Circuit Rated
*** Stop Electro
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***S
French Electronic Distributor since 1988
***rchild Semiconductor
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
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***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 27pF 50volts C0G 5%
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DISCRETE IGBT WITHOUT ANTI-PARAL
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***inecomponents.com
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***rchild Semiconductor
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
부분 # 제조 설명 재고 가격
GN2470K4-G
DISTI # 27693368		Microchip Technology IncTrans IGBT Chip N-CH 700V 1A 3-Pin(2+Tab) DPAK
RoHS: Compliant		8674
  • 100:$0.9723
  • 61:$1.0245
GN2470K4-G
DISTI # GN2470K4-G-ND		Microchip Technology IncIC IGBT 700V 3.5A 3DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$0.9064
GN2470K4-G
DISTI # 70483961		Microchip Technology IncINSULATED GATE BIPOLAR TRANSISTOR,700V,3.5A3 DPAKT/R
RoHS: Compliant		0
  • 2000:$0.8600
GN2470K4-G
DISTI # 689-GN2470K4-G		Microchip Technology IncIGBT Transistors 700V 3.5A IGBT
RoHS: Compliant		0
  • 2000:$0.9070
GN2470K4
DISTI # 689-GN2470K4		Microchip Technology IncIGBT Transistors 700V 3.5A IGBT
RoHS: Not compliant		0
    GN2470K4-G
    DISTI # GN2470K4G    		Microchip Technology Inc 8935
    • 1:$1.0300
    • 25:$0.9800
    • 100:$0.9300
    • 500:$0.8800
    • 1000:$0.6600
    • 1500:$0.6200
    • 2000:$0.6000
    영상 부분 # 설명
    GN2470K4-G

    Mfr.#: GN2470K4-G

    OMO.#: OMO-GN2470K4-G

    		 IGBT Transistors 700V 3.5A IGBT
    GN2470-K4-G

    Mfr.#: GN2470-K4-G

    OMO.#: OMO-GN2470-K4-G-1190

    		 신규 및 오리지널
    GN2470K4

    Mfr.#: GN2470K4

    OMO.#: OMO-GN2470K4-1190

    		 IGBT Transistors 700V 3.5A IGBT
    GN2470K4-G

    Mfr.#: GN2470K4-G

    OMO.#: OMO-GN2470K4-G-MICROCHIP-TECHNOLOGY

    		 IGBT Transistors 700V 3.5A IGBT
    유효성
    재고:
    Available
    주문 시:
    2500
    수량 입력:
    GN2470K4-G의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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