2N5191G

Mfr. #:: 2N5191G
제조사:: ON Semiconductor
설명:: Bipolar Transistors - BJT 4A 60V 40W NPN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2N5191G 데이터 시트
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HTML Datasheet:: 2N5191G Datasheet 2N5191G Datasheet (P4-P6)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-225-3

트랜지스터 극성:: NPN

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 60 V

컬렉터-베이스 전압 VCBO:: 60 V

이미터-베이스 전압 VEBO:: 5 V

수집기-이미터 포화 전압:: 1.4 V

최대 DC 수집기 전류:: 4 A

이득 대역폭 곱 fT:: 2 MHz

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

시리즈:: 2N5191

키:: 11.04 mm

길이:: 7.74 mm

포장:: 대부분

너비:: 2.66 mm

상표:: 온세미컨덕터

지속적인 수집가 전류:: 4 A

DC 수집기/기본 이득 hfe 최소:: 25

Pd - 전력 손실:: 40 W

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 500

하위 카테고리:: 트랜지스터

단위 무게:: 0.028784 oz

Tags: 2N5191, 2N519, 2N51, 2N5

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2N5191G 설명

***emi: 4.0 A, 60 V NPN Bipolar Power Transistor

***ure Electronics: 2N Series 60 V 4 A Through Hole Silicon NPN Power Transistor - TO-225

***ical: Trans GP BJT NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box

***SIT Distribution GmbH: Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

***ark: Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:2MHz; DC Current Gain hFE Min:2hFE; MSL:- RoHS Compliant: Yes

***emi: 4.0 A, 60 V NPN Darlington Bipolar Power Transistor

*** Stop Electro: Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225, Plastic/Epoxy, 3 Pin

***ical: Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box

***ure Electronics: MJE Series 60 V 4 A Darlington Complementary Silicon Power Transistor - TO-225

***nell: TRANSISTOR, BIPOL, NPN, 60V, TO-225-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 100hFE; Transistor

***ical: Trans GP BJT NPN 60V 4A 36000mW 3-Pin(3+Tab) TO-225 Box

***emi: Medium Power NPN Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

***ure Electronics: Bipolar Transistors - BJT 4A 60V 36W NPN

***nell: TRANSISTOR, NPN, 60V, 4A, TO-225; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 36W; DC Collector Current: 4A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-225; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***th Star Micro: This series of plastic medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types are BD438 and BD442.

***emi: Medium Power NPN Darlington Bipolar Power Transistor

***ure Electronics: BD Series 60 V 4 A Medium Power Silicon NPN Darlington Transistor - TO-225

***r Electronics: Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

***ical: Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box

***ark: BIPOLAR TRANSISTOR, NPN, 60V TO-225; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

***nell: DARLINGTON TRANSISTOR, TO-225AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor Case Style: TO-225AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Av Current Ic: 4A; Collector Emitter Saturation Voltage Vce(on): 2.8V; Continuous Collector Current Ic Max: 4A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2A; Device Marking: BD677A; Full Power Rating Temperature: 25°C; Hfe Min: 750; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 40W; Transistor Type: Darlington; Voltage Vcbo: 60V

Market price

부분 #	제조	설명	재고	가격
2N5191G DISTI # V99:2348_07322476	ON Semiconductor	Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-225AA Box RoHS: Compliant	2501	50000:$0.2167 25000:$0.2180 10000:$0.2256 2500:$0.2332 1000:$0.2661 100:$0.3224 10:$0.4535 1:$0.5242
2N5191G DISTI # 2N5191GOS-ND	ON Semiconductor	TRANS NPN 60V 4A TO225AA RoHS: Compliant Min Qty: 1 Container: Bulk	2003In Stock	1000:$0.3193 500:$0.3938 100:$0.4926 10:$0.6360 1:$0.7200
2N5191G DISTI # 25633069	ON Semiconductor	Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-225AA Box RoHS: Compliant	14000	2000:$0.2800
2N5191G DISTI # 30196185	ON Semiconductor	Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-225AA Box RoHS: Compliant	2501	2500:$0.2332 1000:$0.2661 100:$0.3224 26:$0.4535
2N5191G DISTI # 27031931	ON Semiconductor	Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-225AA Box RoHS: Compliant	1000	500:$0.2368
2N5191G DISTI # 2N5191G	ON Semiconductor	Trans GP BJT NPN 60V 4A 3-Pin TO-225AA Box - Bulk (Alt: 2N5191G) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 856	1:$0.6029 10:$0.4969 25:$0.4959 50:$0.4949 100:$0.3199 500:$0.3189 1000:$0.2549
2N5191G DISTI # 863-2N5191G	ON Semiconductor	Bipolar Transistors - BJT 4A 60V 40W NPN RoHS: Compliant	7506	1:$0.6700 10:$0.5500 100:$0.3550 1000:$0.2840 2500:$0.2400 10000:$0.2310 25000:$0.2220
2N5191 DISTI # 511-2N5191	STMicroelectronics	Bipolar Transistors - BJT NPN Power Switching RoHS: Compliant	0
2N5191 DISTI # 863-2N5191	ON Semiconductor	Bipolar Transistors - BJT 4A 60V 40W NPN RoHS: Not compliant	0

영상	부분 #	설명
	Mfr.#: 2N5195G OMO.#: OMO-2N5195G	Bipolar Transistors - BJT 4A 80V 40W PNP
	Mfr.#: 2N4919G OMO.#: OMO-2N4919G	Bipolar Transistors - BJT 3A 60V 30W PNP
	Mfr.#: 2N5306 OMO.#: OMO-2N5306	Darlington Transistors NPN Darl Amp
	Mfr.#: 1N4148 OMO.#: OMO-1N4148	Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
	Mfr.#: 1N4005-E3/54 OMO.#: OMO-1N4005-E3-54	Rectifiers Vr/600V Io/1A
	Mfr.#: SQP500JB-200R OMO.#: OMO-SQP500JB-200R	Wirewound Resistors - Through Hole 5W 200 Ohm 5%
	Mfr.#: DME2P33K-F OMO.#: OMO-DME2P33K-F	Film Capacitors DME 250V.33
	Mfr.#: SQP500JB-200R OMO.#: OMO-SQP500JB-200R-YAGEO	Res 200 Ohm 5% 5W ±300ppm/C Cement AXL Bulk
	Mfr.#: 2N5195G OMO.#: OMO-2N5195G-ON-SEMICONDUCTOR	Bipolar Transistors - BJT 4A 80V 40W PNP
	Mfr.#: 2N4919G OMO.#: OMO-2N4919G-ON-SEMICONDUCTOR	Bipolar Transistors - BJT 3A 60V 30W PNP

2N5191G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes