SQD23N06-31L_GE3

Mfr. #:: SQD23N06-31L_GE3
제조사:: Vishay
설명:: MOSFET N-CH 60V 23A TO252
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SQD23N06-31L_GE3 데이터 시트
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ECAD Model:
추가 정보:: SQD23N06-31L_GE3 추가 정보

제품 속성
속성 값

Tags: SQD23N06-3, SQD23, SQD2, SQD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQD23N06-31L_GE3 추가 정보

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

부분 #	제조	설명	재고	가격
SQD23N06-31L-GE3 DISTI # V36:1790_09219196	Vishay Intertechnologies	N-CHANNEL 60V DPAK RoHS: Compliant	0
SQD23N06-31L_GE3 DISTI # SQD23N06-31L_GE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 23A TO252 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	2000In Stock	6000:$0.6804 2000:$0.7144
SQD23N06-31L_GE3 DISTI # SQD23N06-31L_GE3CT-ND	Vishay Siliconix	MOSFET N-CH 60V 23A TO252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2000In Stock	1000:$0.7621 500:$0.9198 100:$1.1195 10:$1.3930 1:$1.5500
SQD23N06-31L_GE3 DISTI # SQD23N06-31L_GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 60V 23A TO252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2000In Stock	1000:$0.7621 500:$0.9198 100:$1.1195 10:$1.3930 1:$1.5500
SQD23N06-31L_GE3 DISTI # SQD23N06-31L-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD23N06-31L-GE3) RoHS: Not Compliant Min Qty: 2000 Container: Reel	Americas - 0
SQD23N06-31L_GE3 DISTI # SQD23N06-31L_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD23N06-31L_GE3) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$0.6229 12000:$0.6399 8000:$0.6579 4000:$0.6859 2000:$0.7069
SQD23N06-31L_GE3 DISTI # 781-SQD23N06-31L_GE3	Vishay Intertechnologies	MOSFET 60V 23A 100W AEC-Q101 Qualified RoHS: Compliant	3967	1:$1.5500 10:$1.3900 100:$1.1100 500:$0.9190 1000:$0.7620 2000:$0.7140 4000:$0.6800 10000:$0.6750
SQD23N06-31L-GE3	Vishay Intertechnologies		531
SQD23N06-31L-GE3	Vishay Intertechnologies	* FREE SHIPPING ORDERS OVER $100 *	1272	318:$0.5460 58:$0.6300 1:$2.1000
SQD23N0631LGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	2000
SQD23N06-31L-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3 RoHS: Compliant	Americas -

관련 상품

영상	부분 #	설명
	Mfr.#: SQD23N06-31L_GE3 OMO.#: OMO-SQD23N06-31L-GE3-479	MOSFET 60V 23A 100W AEC-Q101 Qualified
	Mfr.#: SQD23N06-31L_T4GE3 OMO.#: OMO-SQD23N06-31L-T4GE3	MOSFET 60V Vds 20V Vgs TO-252
	Mfr.#: SQD23N06-31L-GE3 OMO.#: OMO-SQD23N06-31L-GE3-B59	MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
	Mfr.#: SQD23N06-31L_GE3 OMO.#: OMO-SQD23N06-31L-GE3-VISHAY	MOSFET N-CH 60V 23A TO252
	Mfr.#: SQD23N06-31L OMO.#: OMO-SQD23N06-31L-1190	신규 및 오리지널
	Mfr.#: SQD23N06-31L-GE3 OMO.#: OMO-SQD23N06-31L-GE3-1190	N-CHANNEL 60V DPAK
	Mfr.#: SQD23N0631LGE3 OMO.#: OMO-SQD23N0631LGE3-1190	Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252