SIR462DP-T1-GE3

Mfr. #:: SIR462DP-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 30V 30A PPAK SO-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIR462DP-T1-GE3 데이터 시트
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ECAD Model:
추가 정보:: SIR462DP-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SIR462DP-GE3

단위 무게: 0.017870 oz

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR SO-8

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: PowerPAKR SO-8

구성: 싱글 쿼드 드레인 트리플 소스

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 41.7W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 1155pF @ 15V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 30A (Tc)

Rds-On-Max-Id-Vgs: 7.9 mOhm @ 20A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 30nC @ 10V

Pd 전력 손실: 4.8 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 10 ns

상승 시간: 15 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 30 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 8.2 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 25 ns

일반 켜기 지연 시간: 20 ns

순방향 트랜스컨덕턴스-최소: 70 S

채널 모드: 상승

Tags: SIR462DP-T1, SIR462DP-T, SIR462, SIR46, SIR4, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR462DP-T1-GE3 추가 정보

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Market price

부분 #	제조	설명	재고	가격
SIR462DP-T1-GE3 DISTI # V72:2272_07432609	Vishay Intertechnologies	Trans MOSFET N-CH 30V 18.9A 8-Pin PowerPAK SO T/R RoHS: Compliant	1065	1000:$0.4409 500:$0.5377 250:$0.6011 100:$0.6032 25:$0.7262 10:$0.7297 1:$0.8311
SIR462DP-T1-GE3 DISTI # SIR462DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 30A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11436In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SIR462DP-T1-GE3 DISTI # SIR462DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 30A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11436In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SIR462DP-T1-GE3 DISTI # SIR462DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 30A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.5236
SIR462DP-T1-GE3 DISTI # 26703665	Vishay Intertechnologies	Trans MOSFET N-CH 30V 18.9A 8-Pin PowerPAK SO T/R RoHS: Compliant	3000	3000:$0.5242
SIR462DP-T1-GE3 DISTI # 29536950	Vishay Intertechnologies	Trans MOSFET N-CH 30V 18.9A 8-Pin PowerPAK SO T/R RoHS: Compliant	1065	1000:$0.4409 500:$0.5377 250:$0.6011 100:$0.6032 25:$0.7262 21:$0.7297
SIR462DP-T1-GE3 DISTI # SIR462DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 18.9A 8-Pin PowerPAK SO T/R (Alt: SIR462DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 3000	3000:$0.4680 6000:$0.3600 9000:$0.2865 15000:$0.2421 30000:$0.2229 75000:$0.2160 150000:$0.2095
SIR462DP-T1-GE3 DISTI # SIR462DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 18.9A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SIR462DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.4559 30:$0.4399 75:$0.4249 150:$0.4109 375:$0.3979 750:$0.3849 1500:$0.3789
SIR462DP-T1-GE3 DISTI # SIR462DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 18.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR462DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3649 6000:$0.3539 12000:$0.3389 18000:$0.3299 30000:$0.3209
SIR462DP-T1-GE3 DISTI # 97W2608	Vishay Intertechnologies	MOSFET Transistor, N Channel, 30 A, 30 V, 6.5 mohm, 10 V, 3 V , RoHS Compliant: Yes	7433	1:$1.1900 10:$0.9800 25:$0.9040 50:$0.8280 100:$0.7520 250:$0.7000 500:$0.6470
SIR462DP-T1-GE3 DISTI # 09P8465	Vishay Intertechnologies	MOSFET Transistor, N Channel, 30 A, 30 V, 6.5 mohm, 10 V, 3 V , RoHS Compliant: Yes	0	1:$0.5230 3000:$0.5230
SIR462DP-T1-GE3. DISTI # 28AC2111	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: YES	0	1:$0.5230 3000:$0.5230
SIR462DP-T1-GE3 DISTI # R1082550	Vishay Dale	MOSFET,SIR462DP RoHS: Compliant	0	5:$1.5100 25:$1.2500 100:$1.1500 250:$1.0500 500:$0.9800
SIR462DP-T1-GE3 DISTI # 781-SIR462DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	11292	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.6120 3000:$0.5670
SIR462DP-T1-GE3	Vishay Intertechnologies	Single N-Channel 30 V 0.0079 Ohm 41.7 W SMT Power Mosfet - PowerPAK-SO-8 RoHS: Compliant	27000Reel	3000:$0.5200
SIR462DP-T1-GE3 DISTI # 7103402	Vishay Intertechnologies	MOSFET N-CH 30V 18.9A POWERPAK SO8, PK	630	5:£0.6180 25:£0.4000 50:£0.3880 250:£0.3780 500:£0.3700
SIR462DP-T1-GE3 DISTI # 7103402P	Vishay Intertechnologies	MOSFET N-CH 30V 18.9A POWERPAK SO8, RL	5040	25:£0.4000 50:£0.3880 250:£0.3780 500:£0.3700
SIR462DPT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2000
SIR462DP-T1-GE3	Vishay Intertechnologies	INSTOCK	3000
SIR462DP-T1-GE3 DISTI # 2335399	Vishay Intertechnologies	MOSFET, N CH, 30V, 30A, POWERPAK SO RoHS: Compliant	7298	1:$1.8800 10:$1.5600 100:$1.1900 500:$1.0300 1000:$0.8990 3000:$0.8970
SIR462DP-T1-GE3 DISTI # C1S803601616702	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	3000:$0.4680
SIR462DP-T1-GE3 DISTI # C1S806000594295	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1065	250:$0.5989 100:$0.6011 25:$0.7226 10:$0.7261
SIR462DP-T1-GE3 DISTI # 2335399	Vishay Intertechnologies	MOSFET, N CH, 30V, 30A, POWERPAK SO RoHS: Compliant	7613	5:£0.6300 25:£0.3960 100:£0.3910 250:£0.3860 500:£0.3770
SIR462DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas - 42000	3000:$0.3440 6000:$0.3250 12000:$0.3150 24000:$0.3100
SIR462DP-T1-GE3 DISTI # XSFP00000077669	Vishay Siliconix	RoHS: Compliant	26247	3000:$1.0400 26247:$0.9455

영상	부분 #	설명
	Mfr.#: SIR462DP-T1-GE3 OMO.#: OMO-SIR462DP-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SIR462DP-T1-GE3-CUT TAPE OMO.#: OMO-SIR462DP-T1-GE3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SIR462DP OMO.#: OMO-SIR462DP-1190	신규 및 오리지널
	Mfr.#: SIR462DP-T1 OMO.#: OMO-SIR462DP-T1-1190	신규 및 오리지널
	Mfr.#: SIR462DP-T1-E3 OMO.#: OMO-SIR462DP-T1-E3-1190	신규 및 오리지널
	Mfr.#: SIR462DP-T1-GE3 OMO.#: OMO-SIR462DP-T1-GE3-VISHAY	MOSFET N-CH 30V 30A PPAK SO-8
	Mfr.#: SIR462DP-TI-GE3 OMO.#: OMO-SIR462DP-TI-GE3-1190	신규 및 오리지널

SIR462DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes