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PD57018-E

PD57018-E
Mfr. #:
PD57018-E
제조사:
STMicroelectronics
설명:
RF MOSFET Transistors POWER RF Transistor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
PD57018-E 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
추가 정보:
PD57018-E 추가 정보 PD57018-E Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
RF MOSFET 트랜지스터
RoHS:
Y
트랜지스터 극성:
N-채널
기술:
시
Id - 연속 드레인 전류:
2.5 A
Vds - 드레인 소스 항복 전압:
65 V
Rds On - 드레인 소스 저항:
760 mOhms
얻다:
16.5 dB
출력 파워:
18 W
최소 작동 온도:
- 65 C
최대 작동 온도:
+ 150 C
장착 스타일:
SMD/SMT
패키지/케이스:
PowerSO-10RF-Formed-4
포장:
튜브
구성:
하나의
키:
3.5 mm
길이:
7.5 mm
동작 주파수:
1 GHz
시리즈:
PD57018-E
유형:
RF 전력 MOSFET
너비:
9.4 mm
상표:
ST마이크로일렉트로닉스
순방향 트랜스컨덕턴스 - 최소:
1 S
채널 모드:
상승
습기에 민감한:
네
Pd - 전력 손실:
31.7 W
상품 유형:
RF MOSFET 트랜지스터
공장 팩 수량:
400
하위 카테고리:
MOSFET
Vgs - 게이트 소스 전압:
20 V
단위 무게:
0.105822 oz
Tags
PD5701, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
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***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-1
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) T/R
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***(Formerly Allied Electronics)
IRF7103PBF Dual N-channel MOSFET Transistor, 3 A, 50 V, 8-Pin SOIC | Infineon IRF7103PBF
***eco
Transistor MOSFET N Channel 50 Volt 3 Amp 8-Pin SOIC Tape and Reel
***itex
Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 50 V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8
***et Japan
Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R
***nell
MOSFET, DUAL NN LOGIC SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Di
***ark
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:50V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:3A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7103TRPBF.
***(Formerly Allied Electronics)
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W
***ure Electronics
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
***enic
60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***nsix Microsemi
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No
***nell
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
부분 # 제조 설명 재고 가격
PD57018-E
DISTI # V36:1790_06556195		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		5
  • 100:$23.6900
  • 10:$27.2500
  • 1:$29.4000
PD57018-E
DISTI # 497-5305-5-ND		STMicroelectronicsFET RF 65V 945MHZ PWRSO10
RoHS: Compliant
Min Qty: 1
Container: Tube		555In Stock
  • 100:$25.5208
  • 50:$28.5430
  • 1:$32.4000
PD57018-E
DISTI # 16486842		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		2490
  • 3:$31.7500
PD57018-E
DISTI # 24188752		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		22
  • 100:$24.5000
  • 10:$28.6906
  • 1:$31.1040
PD57018-E
DISTI # 26164719		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		5
  • 1:$29.4000
PD57018-E
DISTI # PD57018-E		STMicroelectronicsTrans MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube (Alt: PD57018-E)
RoHS: Compliant
Min Qty: 400
Container: Tube		Asia - 0
  • 400:$23.4876
  • 800:$22.3691
  • 1200:$21.3524
  • 2000:$20.4240
  • 4000:$19.5730
  • 10000:$19.0440
  • 20000:$18.5428
PD57018-E
DISTI # PD57018-E		STMicroelectronicsTrans MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD57018-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$25.0900
  • 800:$23.8900
  • 1600:$22.8900
  • 2400:$21.7900
  • 4000:$21.3900
PD57018-E
DISTI # 45AC7468		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF,Drain Source Voltage Vds:65V,Continuous Drain Current Id:2.5A,Power Dissipation Pd:31.7W,Operating Frequency Min:-,Operating Frequency Max:945MHz,RF Transistor Case:PowerSO-10RF,No. of RoHS Compliant: Yes306
  • 1:$35.2200
  • 5:$34.8900
  • 10:$32.7400
  • 25:$31.4200
  • 50:$29.9300
  • 100:$28.4400
  • 250:$27.2800
PD57018-E
DISTI # 511-PD57018-E		STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
RoHS: Compliant		92
  • 1:$32.4100
  • 5:$32.0700
  • 10:$29.8900
  • 25:$28.5500
  • 100:$25.5300
  • 250:$24.3500
PD57018TR-E
DISTI # 511-PD57018TR-E		STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant		0
  • 1:$32.4100
  • 5:$32.0700
  • 10:$29.8900
  • 25:$28.5500
  • 100:$25.5300
  • 250:$24.3500
  • 600:$23.1800
PD57018-E
DISTI # PD57018-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		2490
  • 400:$24.3600
  • 500:$23.0600
  • 1000:$21.9000
PD57018-E
DISTI # C1S730200502153		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		22
  • 10:$30.3000
  • 5:$33.0000
  • 1:$40.1000
PD57018-E
DISTI # 2807339		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF
RoHS: Compliant		276
  • 1:£24.3300
  • 5:£23.2300
  • 10:£22.1200
  • 50:£20.5000
  • 100:£18.8700
PD57018-E
DISTI # 2807339		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF
RoHS: Compliant		276
  • 1:$51.6400
  • 50:$45.5000
  • 100:$40.6800
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유효성
재고:
201
주문 시:
2184
수량 입력:
PD57018-E의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$32.41
US$32.41
5
US$32.07
US$160.35
10
US$29.89
US$298.90
25
US$28.55
US$713.75
100
US$25.53
US$2 553.00
250
US$24.35
US$6 087.50
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