MRF8S18120HSR3

MRF8S18120HSR3
Mfr. #:
MRF8S18120HSR3
제조사:
NXP / Freescale
설명:
RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
MRF8S18120HSR3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MRF8S18120HSR3 DatasheetMRF8S18120HSR3 Datasheet (P4-P6)MRF8S18120HSR3 Datasheet (P7-P9)MRF8S18120HSR3 Datasheet (P10-P12)MRF8S18120HSR3 Datasheet (P13-P14)
ECAD Model:
제품 속성
속성 값
제조사:
NXP
제품 카테고리:
RF MOSFET 트랜지스터
RoHS:
Y
트랜지스터 극성:
N-채널
기술:
Id - 연속 드레인 전류:
800 mA
Vds - 드레인 소스 항복 전압:
- 500 mV, 65 V
얻다:
18.2 dB
출력 파워:
72 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
장착 스타일:
SMD/SMT
패키지/케이스:
NI-780
포장:
구성:
하나의
동작 주파수:
1.805 GHz to 1.88 GHz
시리즈:
MRF8S18120H
유형:
RF 전력 MOSFET
상표:
NXP / 프리스케일
채널 수:
1 Channel
상품 유형:
RF MOSFET 트랜지스터
공장 팩 수량:
250
하위 카테고리:
MOSFET
Vgs - 게이트 소스 전압:
10 V
Vgs th - 게이트 소스 임계 전압:
1.8 V
부품 번호 별칭:
935310108128
단위 무게:
0.168010 oz
Tags
MRF8S18120HSR, MRF8S18120HS, MRF8S181, MRF8S18, MRF8S1, MRF8S, MRF8, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V
***W
RF Power Transistor,1805 to 1880 MHz, 120 W, Typ Gain in dB is 18.2 @ 1805 MHz, 28 V, LDMOS, SOT1793
***et
Transistor RF FET N-CH 65V 1805MHz to 1880MHz 3-Pin NI-780S T/R
***ical
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
***i-Key Marketplace
RF L BAND, N-CHANNEL POWER MOSFE
부분 # 제조 설명 재고 가격
MRF8S18120HSR3
DISTI # MRF8S18120HSR3TR-ND
NXP SemiconductorsFET RF 65V 1.81GHZ NI-780S
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
Limited Supply - Call
    MRF8S18120HSR3
    DISTI # MRF8S18120HSR3CT-ND
    NXP SemiconductorsFET RF 65V 1.81GHZ NI-780S
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      MRF8S18120HSR3
      DISTI # MRF8S18120HSR3DKR-ND
      NXP SemiconductorsFET RF 65V 1.81GHZ NI-780S
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        MRF8S18120HSR3Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
        RoHS: Compliant
        675
        • 1000:$89.0000
        • 500:$93.6800
        • 100:$97.5300
        • 25:$101.7100
        • 1:$109.5400
        MRF8S18120HSR3
        DISTI # 841-MRF8S18120HSR3
        NXP SemiconductorsRF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
        RoHS: Compliant
        196
        • 1:$108.0100
        • 5:$105.9100
        • 10:$102.4200
        • 25:$98.0800
        • 50:$96.7400
        • 100:$89.9700
        • 250:$87.9500
        영상 부분 # 설명
        MRF8S18120HSR3

        Mfr.#: MRF8S18120HSR3

        OMO.#: OMO-MRF8S18120HSR3

        RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
        MRF8S18260HR5

        Mfr.#: MRF8S18260HR5

        OMO.#: OMO-MRF8S18260HR5

        RF MOSFET Transistors HV8 1.8GHZ 260W NI1230-8
        MRF8S18210WGHSR5

        Mfr.#: MRF8S18210WGHSR5

        OMO.#: OMO-MRF8S18210WGHSR5

        RF MOSFET Transistors HV8 1.8GHZ 210W
        MRF8S18210WHSR5

        Mfr.#: MRF8S18210WHSR5

        OMO.#: OMO-MRF8S18210WHSR5

        RF MOSFET Transistors HV8 1.8GHZ 55W
        MRF8S18120HSR5

        Mfr.#: MRF8S18120HSR5

        OMO.#: OMO-MRF8S18120HSR5

        RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
        MRF8S18260HR5

        Mfr.#: MRF8S18260HR5

        OMO.#: OMO-MRF8S18260HR5-NXP-SEMICONDUCTORS

        FET RF 2CH 65V 1.81GHZ NI1230-8
        MRF8S18120HSR5

        Mfr.#: MRF8S18120HSR5

        OMO.#: OMO-MRF8S18120HSR5-NXP-SEMICONDUCTORS

        FET RF 65V 1.81GHZ NI-780S
        MRF8S18210WGHSR3

        Mfr.#: MRF8S18210WGHSR3

        OMO.#: OMO-MRF8S18210WGHSR3-NXP-SEMICONDUCTORS

        FET RF 65V 1.93GHZ NI880XGS
        MRF8S18260HR6

        Mfr.#: MRF8S18260HR6

        OMO.#: OMO-MRF8S18260HR6-NXP-SEMICONDUCTORS

        FET RF 2CH 65V 1.81GHZ NI1230-8
        MRF8S18120HR3

        Mfr.#: MRF8S18120HR3

        OMO.#: OMO-MRF8S18120HR3-NXP-SEMICONDUCTORS

        FET RF 65V 1.81GHZ NI-780
        유효성
        재고:
        Available
        주문 시:
        5000
        수량 입력:
        MRF8S18120HSR3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        시작
        최신 제품
        • PF3001: 10-Channel Configurable PMIC
          NXP Semiconductors' PF3001 power management IC (PMIC) powers the core processor, external memory and peripherals to provide a single-chip system power solution.
        • Single-Coil Wireless Reference Design
          Design is based on the WPC-A11 transmitter definition, comprising of a 5 VDC input source, full-bridge inverter topology and frequency-control methodology
        • Compare MRF8S18120HSR3
          MRF8S18120HSR vs MRF8S18120HSR3 vs MRF8S18120HSR5
        • A1006 Secure Authentication ICs
          NXP's A1006 secure authentication ICs have small form factor and simple system integration.
        • GreenChip™ Solutions
          NXP’s innovative GreenChip Solutions is aimed at enabling smarter, more compact, and extremely energy efficient power solutions.
        • QorIQ P2 Platform
          QorIQ P2 Platform delivers dual- and single-core frequencies up to 1.2GHz on a 45nm technology low-power platform.
        Top