AS4C512M8D3-12BCNTR

AS4C512M8D3-12BCNTR
Mfr. #:
AS4C512M8D3-12BCNTR
제조사:
Alliance Memory
설명:
DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
AS4C512M8D3-12BCNTR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
얼라이언스 메모리
제품 카테고리:
적은 양
RoHS:
Y
유형:
SDRAM - DDR3
데이터 버스 폭:
8 bit
조직:
512 M x 8
패키지/케이스:
FBGA-78
메모리 크기:
4 Gbit
최대 클록 주파수:
800 MHz
액세스 시간:
13.75 ns
공급 전압 - 최대:
1.575 V
공급 전압 - 최소:
1.283 V
공급 전류 - 최대:
82 mA
최소 작동 온도:
0 C
최대 작동 온도:
+ 95 C
시리즈:
AS4C512M8D3-12
포장:
상표:
얼라이언스 메모리
장착 스타일:
SMD/SMT
습기에 민감한:
상품 유형:
적은 양
공장 팩 수량:
1000
하위 카테고리:
메모리 및 데이터 저장
Tags
AS4C512M8D3-1, AS4C512M8, AS4C5, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin F-BGA T/R
***i-Key
IC DRAM 4GBIT PARALLEL 78FBGA
***et
DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TW-BGA
***ark
4G, 1.5V, Ddr3, 512Mx8, 1600Mt/s @ 11-11-11, 78 Ball Bga (9Mm X10.5Mm) Rohs
***I SCT
DDR SDRAM, 512Mx8, 1.5V, 8K, BGA-78,RoHS
***i-Key
IC DRAM 4GBIT PARALLEL 78TWBGA
***ark
4G, 1.35V, Ddr3L, 512Mx8, 1600Mt/s @ 11-11-11, 78 Ball Bga (9Mm X10.5Mm) Rohs, It
***et Europe
DRAM Chip DDR3L SDRAM 4Gbit 512M x 8 1.35V 78-Pin TWBGA Tray
***I SCT
DDR SDRAM, 512Mx8, 1.35V, 8K, BGA-78,RoHS
***i-Key
IC DRAM 4GBIT PARALLEL 78TWBGA
***ark
4G, 1.5V, DDR3, 512Mx8, 1333MT/s @ 9-9-9, 78 ball BGA (9mm x10.5mm) RoHS
***et
DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TW-BGA
***or
IC DRAM 4GBIT PARALLEL 78TWBGA
***et
DRAM Chip DDR3L SDRAM 4G-Bit 512M x 8 1.35V 78-Pin F-BGA
***nell
DDR34G512MX8FBGA, TRAY, DRAM; DDR34G512MX8FBGA, TRAY, DRAM
***ron SCT
DRAM, DDR3 SDRAM, 4Gb, x8, 1.35V, 78-ball FBGA, RoHS
***ark
Dram, Ddr3L, 4Gbit, 0 To 95Deg C Rohs Compliant: Yes
*** Stop Electro
DDR3L DRAM, 512MX8, CMOS, PBGA78
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
French Electronic Distributor since 1988
***ment14 APAC
DRAM, 512M X 8BIT, 0 TO 95DEG C; DRAM Type:DDR3; DRAM Density:4Gbit; DRAM Memory Configuration:512M x 8bit; Clock Frequency:933MHz; Memory Case Style:TFBGA; No. of Pins:78Pins; Supply Voltage Nom:1.35V; Access Time:1.07ns
***et
DRAM Chip DDR3L SDRAM 4G-Bit 1G x 4 1.35V 78-Pin F-BGA
*** International
IC SDRAM 4GBIT 933MHZ 78FBGA
***NGYU ELECTRONICS
IC DRAM 4G PARALLEL 78FBGA
*** Electronic Components
DRAM DDR3 4G 1GX4 FBGA
***el Electronic
IC REG BUCK ADJ SMD
***ark
Dram, 1G X 4Bit, 0 To 95Deg C; Dram Type:ddr3; Dram Density:4Gbit; Dram Memory Configuration:1G X 4Bit; Clock Frequency:933Mhz; Memory Case Style:tfbga; No. Of Pins:78Pins; Supply Voltage Nom:1.35V; Access Time:1.07Ns Rohs Compliant: Yes
***enic
Parallel 4Gb (512M x 8) 1.14V ~ 1.26V Volatile FBGA-78 DDR SDRAM ROHS
***et Europe
DRAM Chip DDR4 SDRAM 4G-Bit 512M x 8 1.2V 78-Pin F-BGA
***ron SCT
DRAM, DDR4, 4Gb, x8, 78-ball FBGA, RoHS
***el Electronic
IC REG BUCK ADJUSTABLE 3A 8SOIC
*** Stop Electro
DDR4 DRAM, 512MX8, CMOS, PBGA78
***ponent Sense
4GBIT(X8) PB-FREE 16-BANK DDR4 1.2V 213
부분 # 제조 설명 재고 가격
AS4C512M8D3-12BCNTR
DISTI # AS4C512M8D3-12BCNTR-ND
Alliance Memory IncIC DRAM 4G PARALLEL 78FBGA
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    AS4C512M8D3-12BCNTR
    DISTI # 913-A4C512M8D312BCNT
    Alliance Memory IncDRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
    RoHS: Compliant
    0
      영상 부분 # 설명
      AS4C512M8D3LB-10BINTR

      Mfr.#: AS4C512M8D3LB-10BINTR

      OMO.#: OMO-AS4C512M8D3LB-10BINTR

      DRAM 4G - B DIE - 10NS OPTION 512M x 8 1.35V 933MHz DDR3-1866bps/pin Industrial (-40 95 C) 78-ball FBGA
      AS4C512M8D3LB-12BINTR

      Mfr.#: AS4C512M8D3LB-12BINTR

      OMO.#: OMO-AS4C512M8D3LB-12BINTR

      DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
      AS4C512M8D3-12BAN

      Mfr.#: AS4C512M8D3-12BAN

      OMO.#: OMO-AS4C512M8D3-12BAN

      DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3L-12BIN

      Mfr.#: AS4C512M8D3L-12BIN

      OMO.#: OMO-AS4C512M8D3L-12BIN

      DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3L-12BCNTR

      Mfr.#: AS4C512M8D3L-12BCNTR

      OMO.#: OMO-AS4C512M8D3L-12BCNTR

      DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3L-12BAN

      Mfr.#: AS4C512M8D3L-12BAN

      OMO.#: OMO-AS4C512M8D3L-12BAN

      DRAM DDR3, 4GB. 1.35V 800MHz,512M x 8
      AS4C512M8D3-12BINTR

      Mfr.#: AS4C512M8D3-12BINTR

      OMO.#: OMO-AS4C512M8D3-12BINTR-ALLIANCE-MEMORY

      DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3-12BCNTR

      Mfr.#: AS4C512M8D3-12BCNTR

      OMO.#: OMO-AS4C512M8D3-12BCNTR-ALLIANCE-MEMORY

      DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3L-12BIN

      Mfr.#: AS4C512M8D3L-12BIN

      OMO.#: OMO-AS4C512M8D3L-12BIN-ALLIANCE-MEMORY

      DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
      AS4C512M8D3LA-12BANTR

      Mfr.#: AS4C512M8D3LA-12BANTR

      OMO.#: OMO-AS4C512M8D3LA-12BANTR-ALLIANCE-MEMORY

      IC DRAM 4G PARALLEL 78FBGA Automotive, AEC-Q100
      유효성
      재고:
      Available
      주문 시:
      3500
      수량 입력:
      AS4C512M8D3-12BCNTR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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