BSC014N04LSIATMA1

BSC014N04LSIATMA1
Mfr. #:
BSC014N04LSIATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSC014N04LSIATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
BSC014N04LSIATMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TDSON-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
40 V
Id - 연속 드레인 전류:
100 A
Rds On - 드레인 소스 저항:
1.2 mOhms
Vgs th - 게이트 소스 임계 전압:
1.2 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
77 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
96 W
구성:
하나의
채널 모드:
상승
상표명:
옵티모스
포장:
키:
1.27 mm
길이:
5.9 mm
시리즈:
OptiMOS 5
트랜지스터 유형:
1 N-Channel
너비:
5.15 mm
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
110 S
가을 시간:
11 ns
상품 유형:
MOSFET
상승 시간:
50 ns
공장 팩 수량:
5000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
55 ns
일반적인 켜기 지연 시간:
16 ns
부품 번호 별칭:
BSC014N04LSI SP000953212
단위 무게:
0.004180 oz
Tags
BSC014N04, BSC014N0, BSC014, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R
***ical
Power-MOSFET, 40V
***ineon
New 40V and 60V product families, feature not only the industrys lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. | Summary of Features: Optimized for synchronous rectification; 15% lower R DS(on) than alternative devices; 31% improvement of FOM over similar devices; Integrated Schottky-like diode; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
40V OptiMOS™ Power MOSFETs
Infineon's 40V OptiMOS Power MOSFETs feature 35% lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg) compared to alternative devices. These devices are optimized for synchronous rectification in switched mode power supplies (SMPS) as well as a broad range of industrial applications such as motor control, solar micro inverters and fast switching DC/DC converters. In addition, this new generation of 40V devices offers higher switching frequencies and are enabled which results in even higher power density.  A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort and cost.Learn More
부분 # 제조 설명 재고 가격
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
20577In Stock
  • 1000:$1.6722
  • 500:$1.9813
  • 100:$2.4966
  • 10:$3.0630
  • 1:$3.3700
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
20577In Stock
  • 1000:$1.6722
  • 500:$1.9813
  • 100:$2.4966
  • 10:$3.0630
  • 1:$3.3700
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
20000In Stock
  • 5000:$1.4734
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC014N04LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.2900
  • 10000:$1.1900
  • 20000:$1.1900
  • 30000:$1.0900
  • 50000:$1.0900
BSC014N04LSIATMA1
DISTI # SP000953212
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R (Alt: SP000953212)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€1.9139
  • 10000:€1.4899
  • 20000:€1.2389
  • 30000:€1.1559
  • 50000:€1.0989
BSC014N04LSIATMA1
DISTI # 50Y1798
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1000:$1.7500
  • 500:$2.0900
  • 250:$2.2100
  • 100:$2.3400
  • 50:$2.5200
  • 25:$2.7000
  • 10:$2.8900
  • 1:$3.3600
BSC014N04LSI
DISTI # 726-BSC014N04LSI
Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant
18687
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.3200
BSC014N04LSIATMA1
DISTI # 726-BSC014N04LSIATMA
Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant
110
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.3200
BSC014N04LSIATMA1
DISTI # 2480707
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 500:£1.2400
  • 250:£1.3300
  • 100:£1.4200
  • 10:£1.7700
  • 1:£2.3600
BSC014N04LSIATMA1
DISTI # 2480707
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 1000:$2.0900
  • 5000:$2.0900
  • 500:$2.5400
  • 100:$2.8800
  • 10:$3.6200
  • 1:$4.2500
BSC014N04LSIATMA1
DISTI # 2480707RL
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 1000:$2.0900
  • 5000:$2.0900
  • 500:$2.5400
  • 100:$2.8800
  • 10:$3.6200
  • 1:$4.2500
영상 부분 # 설명
SP1007-01ETG

Mfr.#: SP1007-01ETG

OMO.#: OMO-SP1007-01ETG

TVS Diodes / ESD Suppressors 1CH 8KV 6V
SN74LVC2G125DCUR

Mfr.#: SN74LVC2G125DCUR

OMO.#: OMO-SN74LVC2G125DCUR

Buffers & Line Drivers Tri-State Dual Bus
FDC5661N-F085

Mfr.#: FDC5661N-F085

OMO.#: OMO-FDC5661N-F085

MOSFET Trans N-Ch 60V 4.3A
MBRA160T3G

Mfr.#: MBRA160T3G

OMO.#: OMO-MBRA160T3G

Schottky Diodes & Rectifiers 1A 60V
FTSH-110-01-L-DV-007-K

Mfr.#: FTSH-110-01-L-DV-007-K

OMO.#: OMO-FTSH-110-01-L-DV-007-K

Headers & Wire Housings .050" Micro Terminal Strip
RC0402FR-0710KL

Mfr.#: RC0402FR-0710KL

OMO.#: OMO-RC0402FR-0710KL

Thick Film Resistors - SMD 10K OHM 1%
SP1007-01ETG

Mfr.#: SP1007-01ETG

OMO.#: OMO-SP1007-01ETG-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 1CH 8KV 6V
SN74LVC2G125DCUR

Mfr.#: SN74LVC2G125DCUR

OMO.#: OMO-SN74LVC2G125DCUR-TEXAS-INSTRUMENTS

Buffers & Line Drivers Tri-State Dual Bus
FDC5661N-F085

Mfr.#: FDC5661N-F085

OMO.#: OMO-FDC5661N-F085-ON-SEMICONDUCTOR

MOSFET N-CH 60V 6-SSOT
MBRA160T3G

Mfr.#: MBRA160T3G

OMO.#: OMO-MBRA160T3G-ON-SEMICONDUCTOR

Schottky Diodes & Rectifiers 1A 60V
유효성
재고:
Available
주문 시:
1992
수량 입력:
BSC014N04LSIATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.67
US$2.67
10
US$2.27
US$22.70
100
US$1.81
US$181.00
500
US$1.59
US$795.00
1000
US$1.31
US$1 310.00
시작
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