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APT31M100L

APT31M100L
Mfr. #:
APT31M100L
제조사:
Microchip / Microsemi
설명:
MOSFET FG, MOSFET, 1000V, TO-264
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
APT31M100L 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT31M100L DatasheetAPT31M100L Datasheet (P4)
ECAD Model:
제품 속성
속성 값
제조사:
마이크로칩
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-264-3
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1 kV
Id - 연속 드레인 전류:
32 A
Rds On - 드레인 소스 저항:
380 mOhms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
260 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
1.04 kW
구성:
하나의
채널 모드:
상승
포장:
튜브
상표:
마이크로칩 / 마이크로세미
순방향 트랜스컨덕턴스 - 최소:
34 S
가을 시간:
33 ns
상품 유형:
MOSFET
상승 시간:
35 ns
공장 팩 수량:
1
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
130 ns
일반적인 켜기 지연 시간:
39 ns
단위 무게:
0.352740 oz
Tags
APT31, APT3, APT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 1KV 32A 3-Pin(3+Tab) TO-264
***rochip
MOSFET MOS8 1000 V 31 A TO-264
*** Stop Electro
Power Field-Effect Transistor, 32A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
*** Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264
*** Source Electronics
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube / MOSFET N-CH 500V 100A TO-264
***nell
MOSFET, N-CH, 500V, 100A, TO-264AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V
***roFlash
Power Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***el Electronic
DC DC Converters 1 (Unlimited) 1 8-SMD Module, 5 Leads Surface Mount Isolated Module ITE (Commercial) ECONOLINE R1SE (E-Series) (1W) -40°C~85°C 0.50Lx0.42W x 0.26 H 12.8mmx10.7mmx6.7mm Module DC-DC 5VIN 1-OUT 5V 0.2A 1W 5-Pin SMD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
부분 # 제조 설명 재고 가격
APT31M100L
DISTI # APT31M100L		Microchip Technology IncPower MOS 8 MOSFET N-Channel 1000V 32A 3-Pin TO-264 - Rail/Tube (Alt: APT31M100L)
RoHS: Compliant
Min Qty: 30
Container: Tube		Americas - 0
  • 300:$10.6900
  • 150:$10.8900
  • 90:$11.1900
  • 60:$11.5900
  • 30:$11.9900
APT31M100L
DISTI # 494-APT31M100L		Microchip Technology IncMOSFET Power MOSFET - MOS8
RoHS: Compliant		12
  • 1:$18.6400
  • 10:$16.9400
  • 25:$15.6700
  • 50:$14.8200
  • 100:$14.3000
  • 250:$13.0500
  • 500:$11.7500
영상 부분 # 설명
APT31M100L

Mfr.#: APT31M100L

OMO.#: OMO-APT31M100L

 MOSFET FG, MOSFET, 1000V, TO-264
APT31M100B2

Mfr.#: APT31M100B2

OMO.#: OMO-APT31M100B2

 MOSFET FG, MOSFET, 1000V, TO-247 T-MAX
APT31M100B2

Mfr.#: APT31M100B2

OMO.#: OMO-APT31M100B2-MICROSEMI

 Trans MOSFET N-CH 1KV 32A 3-Pin(3+Tab) T-MAX - Rail/Tube (Alt: APT31M100B2)
APT31M100L

Mfr.#: APT31M100L

OMO.#: OMO-APT31M100L-MICROSEMI

 Power MOS 8 MOSFET N-Channel 1000V 32A 3-Pin TO-264 - Rail/Tube (Alt: APT31M100L)
APT31N60SCS

Mfr.#: APT31N60SCS

OMO.#: OMO-APT31N60SCS-1190

 신규 및 오리지널
APT31N90JC3

Mfr.#: APT31N90JC3

OMO.#: OMO-APT31N90JC3-1190

 신규 및 오리지널
유효성
재고:
12
주문 시:
1995
수량 입력:
APT31M100L의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$18.64
US$18.64
10
US$16.94
US$169.40
25
US$15.67
US$391.75
50
US$14.82
US$741.00
100
US$14.30
US$1 430.00
250
US$13.05
US$3 262.50
500
US$11.75
US$5 875.00
1000
US$10.90
US$10 900.00
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