CXDM3069N TR

Mfr. #:: CXDM3069N TR
제조사:: Central Semiconductor
설명:: MOSFET 30Vds N-Ch Enh FET 12Vgs 40A 1.2W 6.9A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CXDM3069N TR 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: CXDM3069N TR 추가 정보

제품 속성
속성 값

제조사:: 중앙반도체

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-89

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 6.9 A

Rds On - 드레인 소스 저항:: 50 mOhms

Vgs - 게이트 소스 전압:: 12 V

Qg - 게이트 차지:: 11 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 1.2 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

시리즈:: CXDM

트랜지스터 유형:: 1 N-Channel

상표:: 중앙반도체

상품 유형:: MOSFET

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

부품 번호 별칭:: CXDM3069N PBFREE TR

단위 무게:: 0.004603 oz

Tags: CXDM, CXD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CXDM3069N TR 설명

***et: N-Channel Enhancement Mode MOSFET High Current 30V 6.9A 3-Pin SOT-89 T/R

***i-Key: MOSFET N-CH 30V 6.9A SOT-89

***ure Electronics: N-Channel 30 V 120 mOhm SMT Enhancement Mode Mosfet - SOT-89

***ical: Trans MOSFET N-CH 30V 3.3A Automotive 4-Pin(3+Tab) SOT-89 T/R

***ark: Mosfet, N-Ch, 30V, 3.3A, Sot-89 Rohs Compliant: Yes

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ure Electronics: N-Channel 60 V 3.2 A 1 W Surface Mount OptiMOS Small-Signal-Transistor - SOT-89

***ow.cn: Trans MOSFET N-CH 60V 3.2A Automotive 4-Pin(3+Tab) SOT-89 T/R

***nell: MOSFET, AEC-Q101, N-CH, 60V, SOT-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.2 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 2.1 / Rise Time ns = 2.6 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1

***p One Stop Global: Trans MOSFET P-CH 250V 0.19A Automotive 4-Pin(3+Tab) SOT-89 T/R

***ure Electronics: Single P-Channel 250 V 12 Ohm 4.9 nC SIPMOS® Small Signal Mosfet - SOT-89

***ment14 APAC: MOSFET, P-CH, -250V, -0.19A, SOT-89-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-190mA; Source Voltage Vds:-250V; On

***nell: MOSFET, P-CH, -250V, -0.19A, SOT-89-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -190mA; Drain Source Voltage Vds: -250V; On Resistance Rds(on): 7.7ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 190 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 50 / Rise Time ns = 5.2 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 4.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1

*** Electronics: In a Pack of 100, N-Channel MOSFET, 260 mA, 240 V, 3-Pin SOT-89 Infineon BSS87H6327XTSA1

***ical: Trans MOSFET N-CH 240V 0.26A Automotive 4-Pin(3+Tab) SOT-89 T/R

***ment14 APAC: MOSFET, N, LOGIC, SOT-89; Transistor Polarity:N Channel; Continuous Drain Current Id:290mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:1W; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:290mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulse Current Idm:1.16A; SMD Marking:KA; Termination Type:SMD; Voltage Vds Typ:240V; Voltage Vgs Max:1.2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 260 / Drain-Source Voltage (Vds) V = 240 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 27.3 / Rise Time ns = 3.5 / Turn-OFF Delay Time ns = 17.6 / Turn-ON Delay Time ns = 3.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1

***(Formerly Allied Electronics): PCP1402-TD-H N-channel MOSFET Transistor; 1.2 A; 250 V; 3-Pin SOT-89

***ure Electronics: Single N-Channel 250 V 3.5 W 4.2 nC Silicon Surface Mount Mosfet - SOT-89

***emi: Single N-Channel Power MOSFET, 250V, 1.2A, 2.4Ω

***ical: Trans MOSFET N-CH 250V 1.2A 4-Pin(3+Tab) SOT-89 T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:1.2A; On Resistance Rds(On):1.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V Rohs Compliant: Yes

***nell: NCH 10V DRIVE SERIES; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.2A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 3.5W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***et Europe: Trans MOSFET P-CH 100V 1.5A 3-Pin PCP

***i-Key Marketplace: 2SJ670 - P-CHANNEL SILICON MOSFE

***nell: MOSFET, P CH, 100V, 1.5A, SOT89; Transistor Polarity:P-Channel; Current Id Max:-1.5A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:20V; Power Dissipation:3.5W; Transistor Case Style:SOT-89; No. of Pins:3

CXDM3069N TR 추가 정보

CxxDM Surface Mount Enhancement-Mode MOSFETs: Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more

Market price

부분 #	제조	설명	재고	가격
CXDM3069N TR DISTI # CXDM3069NCT-ND	Central Semiconductor Corp	MOSFET N-CH 30V 6.9A SOT-89 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	616In Stock	500:$0.5438 100:$0.7342 10:$0.9520 1:$1.0900
CXDM3069N TR DISTI # CXDM3069NDKR-ND	Central Semiconductor Corp	MOSFET N-CH 30V 6.9A SOT-89 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	616In Stock	500:$0.5438 100:$0.7342 10:$0.9520 1:$1.0900
CXDM3069N TR DISTI # CXDM3069NTR-ND	Central Semiconductor Corp	MOSFET N-CH 30V 6.9A SOT-89 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$0.4224
CXDM3069N TR DISTI # CXDM3069N TR	Central Semiconductor Corp	N-Channel Enhancement Mode MOSFET High Current 30V 6.9A 3-Pin SOT-89 T/R - Tape and Reel (Alt: CXDM3069N TR) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3149 5000:$0.3019 8000:$0.2939 15000:$0.2809 30000:$0.2739
CXDM3069N TR DISTI # 610-CXDM3069N-TR	Central Semiconductor Corp	MOSFET 30Vds N-Ch Enh FET 12Vgs 40A 1.2W 6.9A RoHS: Compliant	2892	1:$0.8600 10:$0.7450 100:$0.5170 1000:$0.3840 2000:$0.3250 10000:$0.3130 25000:$0.3000

영상	부분 #	설명
	Mfr.#: BAS21GWX OMO.#: OMO-BAS21GWX	Diodes - General Purpose, Power, Switching High-voltage switching diode - 3k Reel
	Mfr.#: BAT54CHMFHT116 OMO.#: OMO-BAT54CHMFHT116	Schottky Diodes & Rectifiers 30V Vr 0.2A Io SBD SOT-23 0.1A
	Mfr.#: JE2835AWT-00-0000-000A0UF827E OMO.#: OMO-JE2835AWT-00-0000-000A0UF827E	High Power LEDs - White White, 54lm 3V, 90CRI
	Mfr.#: CRCW08051M00FKEAC OMO.#: OMO-CRCW08051M00FKEAC	Thick Film Resistors - SMD 1/8Watt 1Mohms 1% Commercial Use
	Mfr.#: CRCW08051K00FKEAC OMO.#: OMO-CRCW08051K00FKEAC	Thick Film Resistors - SMD 1/8Watt 1Kohms 1% Commercial Use
	Mfr.#: JMK212ABJ475KG-T OMO.#: OMO-JMK212ABJ475KG-T-TAIYO-YUDEN	CAP CER 4.7UF 6.3V X5R 0805
	Mfr.#: CRCW0805330RFKEAC OMO.#: OMO-CRCW0805330RFKEAC-VISHAY-DALE	D12/CRCW0805-C 100 330R 1% ET1
	Mfr.#: CRCW08051K00FKEAC OMO.#: OMO-CRCW08051K00FKEAC-VISHAY-DALE	D12/CRCW0805-C 100 1K0 1% ET1
	Mfr.#: BAS21GWX OMO.#: OMO-BAS21GWX-NEXPERIA	DIODE GEN PURP 200V 225MA SOD123
	Mfr.#: CRCW08051M00FKEAC OMO.#: OMO-CRCW08051M00FKEAC-VISHAY-DALE	D12/CRCW0805-C 100 1M0 1% ET1

CXDM3069N TR

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes