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SI2329DS-T1-GE3

SI2329DS-T1-GE3
Mfr. #:
SI2329DS-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET -8V Vds 5V Vgs SOT-23
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI2329DS-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2329DS-T1-GE3 DatasheetSI2329DS-T1-GE3 Datasheet (P4-P6)SI2329DS-T1-GE3 Datasheet (P7-P9)SI2329DS-T1-GE3 Datasheet (P10)
ECAD Model:
추가 정보:
SI2329DS-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
SOT-23-3
채널 수:
1 Channel
트랜지스터 극성:
P-채널
Vds - 드레인 소스 항복 전압:
8 V
Id - 연속 드레인 전류:
6 A
Rds On - 드레인 소스 저항:
30 mOhms
Vgs th - 게이트 소스 임계 전압:
350 mV
Vgs - 게이트 소스 전압:
4.5 V
Qg - 게이트 차지:
19.3 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
2.5 W
구성:
하나의
채널 모드:
상승
상표명:
TrenchFET
포장:
릴
시리즈:
SI2
트랜지스터 유형:
1 P-Channel
상표:
비쉐이 / 실리콘닉스
순방향 트랜스컨덕턴스 - 최소:
2 S
가을 시간:
20 ns
상품 유형:
MOSFET
상승 시간:
22 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
46 ns
일반적인 켜기 지연 시간:
20 ns
단위 무게:
0.000282 oz
Tags
SI232, SI23, SI2
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ler Electronic
VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV
***ure Electronics
Si2329DS Series 8 V 5.3 A 0.03 Ohm SMT P-Channel MOSFET - SOT-23-3
***ied Electronics & Automation
SI2329DS-T1-GE3 P-channel MOSFET Transistor; 6 A; 8 V; 3-Pin TO-236
***enic
8V 6A 2.5W 30m´Î@4.5V5.3A 800mV@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***nell
MOSFET, P-CH, 8V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
부분 # 제조 설명 재고 가격
SI2329DS-T1-GE3
DISTI # V72:2272_07433101		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R
RoHS: Compliant		111
  • 100:$0.4330
  • 25:$0.5115
  • 10:$0.6251
  • 1:$0.7690
SI2329DS-T1-GE3
DISTI # V36:1790_07433101		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.2454
  • 1500000:$0.2456
  • 300000:$0.2560
  • 30000:$0.2716
  • 3000:$0.2741
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 8V 6A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9053In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 8V 6A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9053In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 8V 6A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SI2329DS-T1-GE3
DISTI # 32435712		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R
RoHS: Compliant		111
  • 31:$0.7690
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R (Alt: SI2329DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 15000
  • 150000:$0.2723
  • 75000:$0.2769
  • 30000:$0.2817
  • 15000:$0.2918
  • 9000:$0.3026
  • 6000:$0.3142
  • 3000:$0.3268
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R (Alt: SI2329DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1899
  • 18000:€0.2049
  • 12000:€0.2219
  • 6000:€0.2579
  • 3000:€0.3779
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2329DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SI2329DS-T1-GE3
    DISTI # 63W4143    		Vishay IntertechnologiesMOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV RoHS Compliant: Yes32256
    • 1000:$0.2850
    • 500:$0.3350
    • 100:$0.3960
    • 50:$0.4320
    • 25:$0.4690
    • 10:$0.5050
    • 1:$0.6210
    SI2329DS-T1-GE3
    DISTI # 70616155    		Vishay SiliconixSI2329DS-T1-GE3 P-channel MOSFET Transistor,6 A,8 V,3-Pin TO-236
    RoHS: Compliant    		0
    • 300:$0.4900
    • 600:$0.4800
    • 1500:$0.4700
    • 3000:$0.4500
    • 7500:$0.4200
    SI2329DS-T1-GE3
    DISTI # 78-SI2329DS-T1-GE3    		Vishay IntertechnologiesMOSFET -8V Vds 5V Vgs SOT-23
    RoHS: Compliant    		20267
    • 1:$0.5900
    • 10:$0.4780
    • 100:$0.3630
    • 500:$0.3000
    • 1000:$0.2400
    • 3000:$0.2170
    • 6000:$0.2020
    • 9000:$0.1950
    SI2329DS-T1-GE3
    DISTI # 8123114P    		Vishay IntertechnologiesTRANS MOSFET P-CH 8V 5.3A 3-PIN, RL7800
    • 3000:£0.2160
    • 1500:£0.2190
    • 600:£0.2500
    • 300:£0.3020
    SI2329DS-T1-GE3Vishay Intertechnologies 2934
      SI2329DS-T1-GE3
      DISTI # 2283643      		Vishay IntertechnologiesMOSFET, P-CH, 8V, 6A, SOT23
      RoHS: Compliant      		31934
      • 500:$0.4520
      • 100:$0.5490
      • 10:$0.7220
      • 1:$0.9040
      SI2329DS-T1-GE3
      DISTI # 2283643      		Vishay IntertechnologiesMOSFET, P-CH, 8V, 6A, SOT2331531
      • 500:£0.2340
      • 250:£0.2590
      • 100:£0.2840
      • 10:£0.4150
      • 1:£0.5340
      SI2329DS-T1-GE3Vishay IntertechnologiesMOSFET -8V Vds 5V Vgs SOT-23
      RoHS: Compliant      		Americas -
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        유효성
        재고:
        20
        주문 시:
        2003
        수량 입력:
        SI2329DS-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$0.59
        US$0.59
        10
        US$0.48
        US$4.78
        100
        US$0.36
        US$36.30
        500
        US$0.30
        US$150.00
        1000
        US$0.24
        US$240.00
        2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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