FQP19N10

FQP19N10
Mfr. #:
FQP19N10
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 100V N-Channel QFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FQP19N10 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
100 V
Id - 연속 드레인 전류:
19 A
Rds On - 드레인 소스 저항:
100 mOhms
Vgs - 게이트 소스 전압:
25 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
75 W
구성:
하나의
채널 모드:
상승
포장:
튜브
키:
16.3 mm
길이:
10.67 mm
트랜지스터 유형:
1 N-Channel
유형:
MOSFET
너비:
4.7 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
12 S
가을 시간:
65 ns
상품 유형:
MOSFET
상승 시간:
150 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
20 ns
일반적인 켜기 지연 시간:
7.5 ns
부품 번호 별칭:
FQP19N10_NL
단위 무게:
0.050717 oz
Tags
FQP19N1, FQP19, FQP1, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 19A 3-Pin (3+Tab) TO-220 Rail
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:19A; Resistance, Rds On:0.1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Alternate Case Style:SOT-78B; Current, Idm Pulse:76A; No. of Pins:3; Pin Configuration:G(1),D(2)S(3); Power Dissipation:75W; Power, Pd:75W; Resistance, Rds on Max:0.1ohm; Resistance, Rds on Typ.:0.078ohm; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:2°C/W; Typ Capacitance Ciss:600pF; Voltage, Rds Measurement:10V; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
부분 # 제조 설명 재고 가격
FQP19N10
DISTI # FQP19N10-ND
ON SemiconductorMOSFET N-CH 100V 19A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    FQP19N10L
    DISTI # FQP19N10L-ND
    ON SemiconductorMOSFET N-CH 100V 19A TO-220
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Limited Supply - Call
      FQP19N10L
      DISTI # FQP19N10L
      ON SemiconductorTrans MOSFET N-CH 100V 19A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: FQP19N10L)
      RoHS: Compliant
      Min Qty: 893
      Container: Bulk
      Americas - 0
      • 8930:$0.3449
      • 4465:$0.3539
      • 2679:$0.3579
      • 1786:$0.3629
      • 893:$0.3659
      FQP19N10
      DISTI # 512-FQP19N10
      ON SemiconductorMOSFET 100V N-Channel QFET
      RoHS: Compliant
      0
        FQP19N10L
        DISTI # 512-FQP19N10L
        ON SemiconductorMOSFET 100V N-Ch QFET Logic Level
        RoHS: Compliant
        0
          FQP19N10LFairchild Semiconductor CorporationPower Field-Effect Transistor, 19A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant
          2071
          • 1000:$0.3700
          • 500:$0.3900
          • 100:$0.4000
          • 25:$0.4200
          • 1:$0.4500
          FQP19N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant
          15
            영상 부분 # 설명
            FQP13N10L

            Mfr.#: FQP13N10L

            OMO.#: OMO-FQP13N10L

            MOSFET 100V N-Ch QFET Logic Level
            FQP12P10

            Mfr.#: FQP12P10

            OMO.#: OMO-FQP12P10

            MOSFET 100V P-Channel QFET
            FQP1P50

            Mfr.#: FQP1P50

            OMO.#: OMO-FQP1P50

            MOSFET 500V P-Channel QFET
            FQP12P20C

            Mfr.#: FQP12P20C

            OMO.#: OMO-FQP12P20C-1190

            신규 및 오리지널
            FQP13N06L FQP13N06

            Mfr.#: FQP13N06L FQP13N06

            OMO.#: OMO-FQP13N06L-FQP13N06-1190

            신규 및 오리지널
            FQP13N10.

            Mfr.#: FQP13N10.

            OMO.#: OMO-FQP13N10--1190

            QF 100V 180MOHM L TO220
            FQP13N50C,13N50C,

            Mfr.#: FQP13N50C,13N50C,

            OMO.#: OMO-FQP13N50C-13N50C--1190

            신규 및 오리지널
            FQP17N08

            Mfr.#: FQP17N08

            OMO.#: OMO-FQP17N08-ON-SEMICONDUCTOR

            MOSFET N-CH 80V 16.5A TO-220
            FQP17P06

            Mfr.#: FQP17P06

            OMO.#: OMO-FQP17P06-ON-SEMICONDUCTOR

            MOSFET P-CH 60V 17A TO-220
            FQP1N50

            Mfr.#: FQP1N50

            OMO.#: OMO-FQP1N50-ON-SEMICONDUCTOR

            MOSFET N-CH 500V 1.4A TO-220
            유효성
            재고:
            Available
            주문 시:
            3000
            수량 입력:
            FQP19N10의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
            시작
            최신 제품
            • Gate Drivers
              The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
            • NCP137 700 mA LDO Regulators
              ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
            • NCP114 Low Dropout Regulators
              ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
            • LC717A00AR Touch Sensor
              These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
            • Compare FQP19N10
              FQP19N10 vs FQP19N10C vs FQP19N10L
            • FDMQ86530L Quad-MOSFET
              ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
            Top