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IPD65R420CFD

IPD65R420CFD
Mfr. #:
IPD65R420CFD
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD65R420CFD 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPD65R420CFD 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
8.7 A
Rds On - 드레인 소스 저항:
420 mOhms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
32 nC
Pd - 전력 손실:
83.3 W
구성:
하나의
상표명:
쿨모스
포장:
릴
키:
2.3 mm
길이:
6.5 mm
시리즈:
CoolMOS CFD2
트랜지스터 유형:
1 N-Channel
너비:
6.22 mm
상표:
인피니언 테크놀로지스
가을 시간:
8 ns
상품 유형:
MOSFET
상승 시간:
7 ns
공장 팩 수량:
2500
하위 카테고리:
MOSFET
부품 번호 별칭:
IPD65R420CFDBTMA1 IPD65R42CFDXT SP000891704
단위 무게:
0.139332 oz
Tags
IPD65R42, IPD65R4, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
IPD65R420CFDBTMA1
DISTI # IPD65R420CFDBTMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPD65R420CFDBTMA1
    DISTI # IPD65R420CFDBTMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPD65R420CFDBTMA1
      DISTI # IPD65R420CFDBTMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.8756
      IPD65R420CFDBTMA1
      DISTI # SP000891704      		Infineon Technologies AGTrans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-252 (Alt: SP000891704)
      RoHS: Compliant
      Min Qty: 2500      		Europe - 2500
      • 2500:€1.3259
      • 5000:€1.1129
      • 10000:€0.9289
      • 15000:€0.8099
      • 25000:€0.7579
      IPD65R420CFDBTMA1Infineon Technologies AGPower Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant      		46976
      • 1000:$0.7600
      • 500:$0.8000
      • 100:$0.8400
      • 25:$0.8700
      • 1:$0.9400
      IPD65R420CFD
      DISTI # 726-IPD65R420CFD      		Infineon Technologies AGMOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
      RoHS: Compliant      		0
      • 1:$1.7400
      • 10:$1.4800
      • 100:$1.1800
      • 500:$1.0400
      • 1000:$0.8550
      IPD65R420CFDBTMA1
      DISTI # N/A      		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
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        		 신규 및 오리지널
        유효성
        재고:
        Available
        주문 시:
        5500
        수량 입력:
        IPD65R420CFD의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$1.73
        US$1.73
        10
        US$1.47
        US$14.70
        100
        US$1.17
        US$117.00
        500
        US$1.03
        US$515.00
        1000
        US$0.85
        US$854.00
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