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IPW65R150CFDFKSA1

IPW65R150CFDFKSA1
Mfr. #:
IPW65R150CFDFKSA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 700V 22.4A TO247-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPW65R150CFDFKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPW65R150CFDFKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
22.4 A
Rds On - 드레인 소스 저항:
135 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
86 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
195.3 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
키:
21.1 mm
길이:
16.13 mm
시리즈:
CoolMOS CFD2
트랜지스터 유형:
1 N-Channel
너비:
5.21 mm
상표:
인피니언 테크놀로지스
가을 시간:
5.6 ns
상품 유형:
MOSFET
상승 시간:
7.6 ns
공장 팩 수량:
240
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
52.8 ns
일반적인 켜기 지연 시간:
12.4 ns
부품 번호 별칭:
IPW65R150CFD IPW65R15CFDXK SP000907038
단위 무게:
1.340411 oz
Tags
IPW65R15, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 150 mOhm 86 nC CoolMOS™ Power Mosfet - TO-247-3
***p One Stop Global
Trans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-247 Tube
***et
Trans MOSFET N-CH 650V 22.4A 3-Pin TO-247 Tube
***ical
650V Power Transistor
***ronik
N-CH 650V 22,4A 150mOhm TO247
***i-Key
HIGH POWER_LEGACY
***ark
Mosfet, N-Ch, 650V, 22.4A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 22.4A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:195.3W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 22,4A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:22.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.135ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:195.3W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is 's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
IPW65R150CFDFKSA1
DISTI # V99:2348_06378021		Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 100:$2.6620
  • 10:$3.1509
  • 1:$3.6080
IPW65R150CFDFKSA1
DISTI # IPW65R150CFDFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		1200In Stock
  • 1200:$2.6056
  • 720:$3.0363
  • 240:$3.6824
  • 10:$4.4280
  • 1:$4.9300
IPW65R150CFDFKSA1
DISTI # 31057467		Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 100:$2.6620
  • 10:$3.1509
  • 4:$3.6080
IPW65R150CFDFKSA1
DISTI # 31237331		Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 30:$1.8882
IPW65R150CFDFKSA1
DISTI # SP000907038		Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin TO-247 Tube (Alt: SP000907038)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 480
  • 1:€2.1900
  • 10:€1.9900
  • 25:€1.9900
  • 50:€1.8900
  • 100:€1.7900
  • 500:€1.6900
  • 1000:€1.5900
IPW65R150CFDFKSA1
DISTI # IPW65R150CFDFKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R150CFDFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.0900
  • 480:$1.9900
  • 960:$1.9900
  • 1440:$1.8900
  • 2400:$1.8900
IPW65R150CFDFKSA1
DISTI # IPW65R150CFD		Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin TO-247 Tube (Alt: IPW65R150CFD)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 0
    IPW65R150CFDFKSA1
    DISTI # 13AC9101    		Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power , RoHS Compliant: Yes0
    • 1:$4.8300
    • 10:$4.1600
    • 25:$3.9900
    • 50:$3.8300
    • 100:$3.6600
    IPW65R150CFD
    DISTI # 726-IPW65R150CFD    		Infineon Technologies AGMOSFET N-Ch 700V 22.4A TO247-3
    RoHS: Compliant    		1129
    • 1:$3.9900
    • 10:$3.3900
    • 100:$2.9400
    IPW65R150CFDFKSA1
    DISTI # 726-IPW65R150CFDFKSA    		Infineon Technologies AGMOSFET N-Ch 700V 22.4A TO247-3
    RoHS: Compliant    		441
    • 1:$3.9900
    • 10:$3.3900
    • 100:$2.9400
    IPW65R150CFDFKSA1
    DISTI # 2726082    		Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-247-3
    RoHS: Compliant    		0
    • 1:$4.5500
    • 10:$4.2600
    • 100:$3.7700
    IPW65R150CFDFKSA1
    DISTI # C1S322000339363    		Infineon Technologies AGTrans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		240
    • 240:$3.2200
    IPW65R150CFDFKSA1
    DISTI # 2726082    		Infineon Technologies AGMOSFET, N-CH, 650V, 22.4A, TO-247-3
    RoHS: Compliant    		240
    • 1:£3.4100
    • 10:£2.5900
    • 100:£2.2500
    • 250:£2.1800
    • 500:£2.1000
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    유효성
    재고:
    Available
    주문 시:
    1500
    수량 입력:
    IPW65R150CFDFKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$3.98
    US$3.98
    10
    US$3.38
    US$33.80
    100
    US$2.93
    US$293.00
    250
    US$2.78
    US$695.00
    500
    US$2.50
    US$1 250.00
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