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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSP316PL6327HTSA1 DISTI # BSP316PL6327HTSA1TR-ND | Infineon Technologies AG | MOSFET P-CH 100V 0.68A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP316PL6327HTSA1 DISTI # BSP316PL6327HTSA1CT-ND | Infineon Technologies AG | MOSFET P-CH 100V 0.68A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP316PL6327HTSA1 DISTI # BSP316PL6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET P-CH 100V 0.68A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP316P L6327 DISTI # 726-BSP316PL6327 | Infineon Technologies AG | MOSFET P-Ch -100V 680mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP316PL6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 735 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSP316 OMO.#: OMO-BSP316-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSP316 / BSP316 OMO.#: OMO-BSP316-BSP316-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSP316E6327 OMO.#: OMO-BSP316E6327-1190 |
Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP316P OMO.#: OMO-BSP316P-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSP316P E6327 OMO.#: OMO-BSP316P-E6327-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSP316PE6327XTINCT OMO.#: OMO-BSP316PE6327XTINCT-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSP316PH6327 OMO.#: OMO-BSP316PH6327-1190 |
-100V,-0.68A,P-Ch Small-Signal MOSFET |
|
|
Mfr.#: BSP316PL6327 OMO.#: OMO-BSP316PL6327-1190 |
Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP316PL6327XT OMO.#: OMO-BSP316PL6327XT-1190 |
신규 및 오리지널 |
|
Mfr.#: BSP316PE6327T |
MOSFET P-CH 100V 0.68A SOT223 |
