IRLB3813PBF

Mfr. #:: IRLB3813PBF
제조사:: Infineon Technologies
설명:: MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRLB3813PBF 데이터 시트
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HTML Datasheet:: IRLB3813PBF Datasheet IRLB3813PBF Datasheet (P4-P6)IRLB3813PBF Datasheet (P7-P9)
ECAD Model:
추가 정보:: IRLB3813PBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 260 A

Rds On - 드레인 소스 저항:: 1.95 mOhms

Vgs th - 게이트 소스 임계 전압:: 1.9 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 57 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 230 W

구성:: 하나의

포장:: 튜브

키:: 15.65 mm

길이:: 10 mm

트랜지스터 유형:: 1 N-Channel

너비:: 4.4 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 140 S

가을 시간:: 60 ns

상품 유형:: MOSFET

상승 시간:: 170 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 33 ns

일반적인 켜기 지연 시간:: 36 ns

부품 번호 별칭:: SP001558110

단위 무게:: 0.211644 oz

Tags: IRLB3813P, IRLB3813, IRLB38, IRLB3, IRLB, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRLB3813PBF 설명

***ure Electronics: Single N-Channel 30 V 1.95 mOhm 57 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 260A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH, 30V, 190A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Cont Current Id @ 100°C:190A; Cont Current Id @ 25°C:260A; Current Id Max:260A; Package / Case:TO-220AB; Power Dissipation Pd:230W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V

IRLB3813PBF 추가 정보

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

부분 #	제조	설명	재고	가격
IRLB3813PBF DISTI # V99:2348_13889936	Infineon Technologies AG	Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	539	10000:$0.5796 5000:$0.6440 2000:$0.6713 1000:$0.7186 500:$0.8448 100:$0.9230 10:$1.1176 1:$1.2882
IRLB3813PBF DISTI # IRLB3813PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 260A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	4834In Stock	1000:$0.9885 500:$1.1713 100:$1.4759 10:$1.8110 1:$2.0000
IRLB3813PBF DISTI # 30719937	Infineon Technologies AG	Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1296	250:$0.6164 100:$0.6240 25:$0.7632
IRLB3813PBF DISTI # 26198086	Infineon Technologies AG	Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	539	500:$0.8448 100:$0.9230 11:$1.1176
IRLB3813PBF DISTI # 30611794	Infineon Technologies AG	Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	188	100:$1.1858 50:$1.4025 10:$1.7085 8:$3.3533
IRLB3813PBF DISTI # IRLB3813PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube (Alt: IRLB3813PBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Asia - 2500	1000:$0.3333 2000:$0.3299
IRLB3813PBF DISTI # SP001558110	Infineon Technologies AG	Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001558110) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 1850	1:€1.0499 10:€0.9329 25:€0.8399 50:€0.7629 100:€0.6999 500:€0.6459 1000:€0.5999
IRLB3813PBF DISTI # IRLB3813PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRLB3813PBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.6379 2000:$0.6149 4000:$0.5929 6000:$0.5729 10000:$0.5619
IRLB3813PBF DISTI # 25R4660	Infineon Technologies AG	MOSFET Transistor, N Channel, 260 A, 30 V, 0.0016 ohm, 10 V, 1.9 V RoHS Compliant: Yes	73	1:$1.7900 10:$1.5300 100:$1.2200 500:$1.0700 1000:$0.8830 2500:$0.8230 5000:$0.7920
IRLB3813PBF DISTI # 70019222	Infineon Technologies AG	IRLB3813PBF N-channel MOSFET Transistor,260 A,30 V,3-Pin TO-220AB RoHS: Compliant	137	1:$2.3190 10:$2.0460 100:$1.7840 500:$1.5460 1000:$1.3640
IRLB3813PBF	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	1055	1000:$0.7000 500:$0.7300 100:$0.7600 25:$0.8000 1:$0.8600
IRLB3813PBF	International Rectifier	Power Field-Effect Transistor, 120A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	5900	1000:$0.7200 500:$0.7600 100:$0.7900 25:$0.8300 1:$0.8900
IRLB3813PBF DISTI # 942-IRLB3813PBF	Infineon Technologies AG	MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg RoHS: Compliant	31	1:$1.6300 10:$1.3900 100:$1.1100 500:$0.9700 1000:$0.8030
IRLB3813PBF DISTI # 7259313	Infineon Technologies AG	MOSFET N-CHANNEL 30V 260A TO220AB, PK	188	2:£1.2700 26:£0.7850
IRLB3813PBF DISTI # 7259313P	Infineon Technologies AG	MOSFET N-CHANNEL 30V 260A TO220AB, TU	1616	26:£0.7850
IRLB3813PBF	Infineon Technologies AG		80	26:$2.7200 8:$2.9920 1:$4.0800
IRLB3813PBF DISTI # IRLB3813PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,260A,230W,TO220AB	542	1:$1.7100 3:$1.5400 10:$1.2700 50:$1.1200
IRLB3813PBF	International Rectifier	RoHS: Compliant	Europe - 150
IRLB3813PBF DISTI # IRLB3813PBF	Infineon Technologies AG	N-LogL 30V 260A 230W 0,00195R TO220AB RoHS: Compliant	90	10:€1.1500 50:€0.8450 200:€0.7450 500:€0.7175
IRLB3813PBF	International Rectifier	INSTOCK	128
IRLB3813PBF DISTI # 1740786	Infineon Technologies AG	MOSFET, N CH, 30V, 190A, TO220 RoHS: Compliant	70	1:$2.5900 10:$2.2000 100:$1.7600 500:$1.5400 1000:$1.2900
IRLB3813PBF	Infineon Technologies AG	RoHS (ship within 1day)	100	1:$2.5800 10:$2.1200 50:$1.7100 100:$1.4600 500:$1.3800 1000:$1.3600
IRLB3813PBF DISTI # 1740786	Infineon Technologies AG	MOSFET, N CH, 30V, 190A, TO220 RoHS: Compliant	164	1:£1.4400 10:£0.8900 100:£0.8710 250:£0.8510 500:£0.8320
IRLB3813PBF DISTI # C1S322000502020	Infineon Technologies AG	Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	539	500:$0.8667 100:$0.9652 10:$1.1467
IRLB3813PBF DISTI # C1S322000502039	Infineon Technologies AG	Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	188	100:$1.0400 50:$1.2300 10:$1.5000 1:$2.9400

관련 상품

영상	부분 #	설명
	Mfr.#: 1N914 OMO.#: OMO-1N914	Diodes - General Purpose, Power, Switching 100V 4.0ns Diode Single Junction
	Mfr.#: SQP50P03-07_GE3 OMO.#: OMO-SQP50P03-07-GE3	MOSFET P-Channel 30V AEC-Q101 Qualified
	Mfr.#: MBR2045CTF-G1 OMO.#: OMO-MBR2045CTF-G1	Schottky Diodes & Rectifiers HV Power Schottky 45Vrrm 2x10A 0.65Vf
	Mfr.#: IRLB8314PBF OMO.#: OMO-IRLB8314PBF	MOSFET TRENCH_MOSFETS
	Mfr.#: RHS7J2D152J1DGH01A OMO.#: OMO-RHS7J2D152J1DGH01A	Multilayer Ceramic Capacitors MLCC - Leaded 200VDC 1500pF 5% AEC-Q200
	Mfr.#: IRLB8314PBF OMO.#: OMO-IRLB8314PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 184A TO220
	Mfr.#: MBR2045CTF-G1 OMO.#: OMO-MBR2045CTF-G1-DIODES	DIODE SCHOTTKY 45V 10A TO220AB
	Mfr.#: 1N914 OMO.#: OMO-1N914-ON-SEMICONDUCTOR	DIODE GEN PURP 100V 200MA DO35
	Mfr.#: UVR2A0R1MDD1TA OMO.#: OMO-UVR2A0R1MDD1TA-NICHICON	Aluminum Electrolytic Capacitors - Radial Leaded 0.1uF 20% 100V Miniature Sized
	Mfr.#: SQP50P03-07_GE3 OMO.#: OMO-SQP50P03-07-GE3-VISHAY	MOSFET P-CH 30V 50A TO220AB

유효성

재고:: Available
주문 시:: 1986
수량 입력:

IRLB3813PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.63~~; ~~US$1.63~~

10: ~~US$1.38~~; ~~US$13.80~~

100: ~~US$1.10~~; ~~US$110.00~~

500: ~~US$0.97~~; ~~US$485.00~~

1000: ~~US$0.80~~; ~~US$803.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

IRLB3813P 5
IRLB3813 6
IRLB38 7
IRLB3 15
IRLB 41
IRL 1838

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IRLB3813PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes