IRL2203NPBF

Mfr. #:: IRL2203NPBF
제조사:: Infineon Technologies
설명:: MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRL2203NPBF 데이터 시트
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HTML Datasheet:: IRL2203NPBF Datasheet IRL2203NPBF Datasheet (P4-P6)IRL2203NPBF Datasheet (P7-P9)
ECAD Model:
추가 정보:: IRL2203NPBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 100 A

Rds On - 드레인 소스 저항:: 10 mOhms

Vgs - 게이트 소스 전압:: 16 V

Qg - 게이트 차지:: 40 nC

Pd - 전력 손실:: 130 W

구성:: 하나의

포장:: 튜브

키:: 15.65 mm

길이:: 10 mm

트랜지스터 유형:: 1 N-Channel

너비:: 4.4 mm

상표:: 인피니언 테크놀로지스

상품 유형:: MOSFET

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001573688

단위 무게:: 0.211644 oz

Tags: IRL2203NP, IRL2203N, IRL2203, IRL22, IRL2, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRL2203NPBF 설명

***ure Electronics: Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube

***ied Electronics & Automation: MOSFET, 30V, 100A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 180 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

IRL2203NPBF 추가 정보

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

부분 #	제조	설명	재고	가격
IRL2203NPBF DISTI # 30155550	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube	4882	1000:$0.5808 500:$0.6192 250:$0.6384 100:$0.6672 25:$0.7104
IRL2203NPBF DISTI # IRL2203NPBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 116A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	1447In Stock	1000:$0.7202 500:$0.9123 100:$1.1764 50:$1.3444 1:$1.6800
IRL2203NPBF DISTI # C1S322000501234	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	4882	2000:$0.6690 1000:$0.7210 500:$0.9420 100:$1.0200 25:$1.2400 5:$1.5300
IRL2203NPBF DISTI # IRL2203NPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB (Alt: IRL2203NPBF) RoHS: Compliant Min Qty: 1000	Asia - 450	1000:$0.4275 2000:$0.4099 3000:$0.4044 5000:$0.3886 10000:$0.3836 25000:$0.3741 50000:$0.3649
IRL2203NPBF DISTI # IRL2203NPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL2203NPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 335	1:$0.9549 10:$0.8809 25:$0.8779 50:$0.8759 100:$0.7249 500:$0.5659 1000:$0.5089
IRL2203NPBF DISTI # SP001573688	Infineon Technologies AG	Trans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB (Alt: SP001573688) RoHS: Compliant Min Qty: 1	Europe - 1900	1:€1.2339 10:€0.9699 25:€0.9229 50:€0.9209 100:€0.8029 500:€0.7099 1000:€0.5599
IRL2203NPBF DISTI # 63J7734	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 116A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:116A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,MSL:- RoHS Compliant: Yes	95	1:$1.4400 10:$1.2300 100:$0.9390 500:$0.8300 1000:$0.6550 2500:$0.5810 10000:$0.5590
IRL2203NPBF DISTI # 70018523	Infineon Technologies AG	IRL2203NPBF N-channel MOSFET Transistor,116 A,30 V,3-Pin TO-220AB RoHS: Compliant	0	750:$1.8770
IRL2203NPBF	Infineon Technologies AG	Single N-Channel 30 V 7 mOhm 60 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant	600Tube	25:$0.7400 250:$0.5200 1000:$0.4750 2000:$0.4550
IRL2203NPBF	International Rectifier	RoHS: Not Compliant	590	1000:$0.5800 500:$0.6100 100:$0.6300 25:$0.6600 1:$0.7100
IRL2203NPBF DISTI # 942-IRL2203NPBF	Infineon Technologies AG	MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB RoHS: Compliant	1065	1:$1.4400 10:$1.2300 100:$0.9390 500:$0.8300 1000:$0.6550 2500:$0.5810 10000:$0.5590
IRL2203NPBF DISTI # 5409985	Infineon Technologies AG	MOSFET N-CHANNEL 30V 116A TO220AB, EA	200	1:£2.0000 10:£0.7200 25:£0.7100
IRL2203NPBF DISTI # 5409985P	Infineon Technologies AG	MOSFET N-CHANNEL 30V 116A TO220AB, TU	1800	10:£0.7200 25:£0.7100
IRL2203NPBF	International Rectifier	MOSFET Transistor, N-Channel, TO-220AB	200	131:$1.0395 50:$1.1550 1:$2.3100
IRL2203NPBF DISTI # IRL2203NPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,100A,130W,TO220AB	1669	1:$1.1900 3:$1.1000 10:$0.8900 50:$0.8100
IRL2203NPBF DISTI # TMOSP12538	Infineon Technologies AG	N-CH 30V 116A 7mOhm TO220-3 RoHS: Compliant	Stock DE - 1500Stock US - 0	50:$0.9177 150:$0.8653 300:$0.8128 600:$0.7342 1000:$0.7079
IRL2203NPBF DISTI # IRL2203NPBF	Infineon Technologies AG	N-LogL 30V 75A 180W 0,007R TO220AB RoHS: Compliant	1010	10:€0.8480 50:€0.6080 200:€0.5480 500:€0.5276
IRL2203NPBF DISTI # 8650896	Infineon Technologies AG	MOSFET, N, 30V, 100A, TO-220 RoHS: Compliant	1092	5:£0.7340 25:£0.7240 100:£0.7090 250:£0.6930 500:£0.6410
IRL2203NPBF DISTI # XSLY00000001130	INFINEON/IR	TO-220AB RoHS: Compliant	17460	1350:$0.5214 17460:$0.4867
IRL2203NPBF DISTI # XSFP00000020523	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 117AI(C),1200VV(BR)CES, N-Channel, TO-247AC RoHS: Compliant	22748	150:$1.4800 22748:$1.3500
IRL2203NPBF DISTI # 2565899	International Rectifier	N CHANNEL MOSFET, 30V, 116A, TO-220AB RoHS: Compliant	95	1:$2.2800 10:$1.9500 100:$1.5000 500:$1.3200 1000:$1.0400 2500:$0.9200 10000:$0.9040
IRL2203NPBF DISTI # 8650896	Infineon Technologies AG	MOSFET, N, 30V, 100A, TO-220 RoHS: Compliant	1101	1:$2.0000

관련 상품

영상	부분 #	설명
	Mfr.#: SMA6F12A OMO.#: OMO-SMA6F12A	TVS Diodes / ESD Suppressors DFD PROTECTION
	Mfr.#: IRF4905PBF OMO.#: OMO-IRF4905PBF	MOSFET MOSFT PCh -55V -74A 20mOhm 120nC
	Mfr.#: IRFZ44RPBF OMO.#: OMO-IRFZ44RPBF	MOSFET N-CH 60V HEXFET MOSFET
	Mfr.#: STD10P6F6 OMO.#: OMO-STD10P6F6	MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate
	Mfr.#: IRF2807PBF OMO.#: OMO-IRF2807PBF	MOSFET MOSFT 75V 82A 13mOhm 106.7nC
	Mfr.#: VS-30CTQ060-M3 OMO.#: OMO-VS-30CTQ060-M3	Schottky Diodes & Rectifiers 60V 2 x 15A IF C.A. TO-220AB
	Mfr.#: ATTINY13A-PU OMO.#: OMO-ATTINY13A-PU	8-bit Microcontrollers - MCU 1KB In-system Flash 20MHz 1.8V-5.5V
	Mfr.#: TL494CDR OMO.#: OMO-TL494CDR	Switching Controllers PWM Controller
	Mfr.#: EEH-AZF1V151 OMO.#: OMO-EEH-AZF1V151	Aluminum Electrolytic Capacitors - Radial Leaded 35V 150uF 20% AEC-Q200
	Mfr.#: VS-30CTQ060-M3 OMO.#: OMO-VS-30CTQ060-M3-VISHAY	DIODE ARRAY SCHOTTKY 60V TO220AB

유효성

재고:: Available
주문 시:: 1991
수량 입력:

IRL2203NPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.43~~; ~~US$1.43~~

10: ~~US$1.22~~; ~~US$12.20~~

100: ~~US$0.94~~; ~~US$93.90~~

500: ~~US$0.83~~; ~~US$415.00~~

1000: ~~US$0.66~~; ~~US$655.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

IRL2203NP 9
IRL2203N 22
IRL2203 27
IRL22 29
IRL2 77
IRL 1838

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IRL2203NPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes