C2M0280120

Mfr. #:: C2M0280120
제조사:: Cree Inc
설명:
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: C2M0280120 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사: 주식회사 크리

제품 카테고리: FET - 단일

시리즈: Z-FET

포장: 튜브

단위 무게: 1.340411 oz

장착 스타일: 구멍을 통해

상표명: Z-FET

패키지 케이스: TO-247-3

기술: SiC

작동 온도: -55°C ~ 150°C (TJ)

장착형: 구멍을 통해

채널 수: 1 Channel

공급자-장치-패키지: TO-247-3

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 62.5W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 1200V (1.2kV)

입력-커패시턴스-Ciss-Vds: 259pF @ 1000V

FET 기능: 탄화규소(SiC)

Current-Continuous-Drain-Id-25°C: 10A (Tc)

Rds-On-Max-Id-Vgs: 370 mOhm @ 6A, 20V

Vgs-th-Max-Id: 2.8V @ 1.25mA (Typ)

Gate-Charge-Qg-Vgs: 20.4nC @ 20V

Pd 전력 손실: 62.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 9.9 ns

상승 시간: 7.6 ns

Vgs 게이트 소스 전압: - 10 V to + 25 V

Id-연속-드레인-전류: 10 A

Vds-드레인-소스-고장-전압: 1200 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.8 V

Rds-On-Drain-Source-Resistance: 280 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 10.8 ns

일반 켜기 지연 시간: 5.2 ns

Qg-Gate-Charge: 5.6 nC

순방향 트랜스컨덕턴스-최소: 2.8 S

채널 모드: 상승

Tags: C2M0, C2M

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

부분 #	제조	설명	재고	가격
C2M0280120D DISTI # V36:1790_06265415	Cree, Inc.	Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247 RoHS: Compliant	170	25:$4.3900 10:$4.8750 1:$5.9576
C2M0280120D DISTI # V99:2348_06265415	Cree, Inc.	Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247 RoHS: Compliant	86	10:$4.8830 1:$5.9576
C2M0280120D DISTI # C2M0280120D-ND	Wolfspeed	MOSFET N-CH 1200V 10A TO-247-3 RoHS: Compliant Min Qty: 1 Container: Tube	16158In Stock	100:$5.4131 1:$5.4300
KIT8020-CRD-8FF1217P-1 DISTI # KIT8020-CRD-8FF1217P-1-ND	Wolfspeed	EVAL KIT PCB 2-MOSFET 2-SIC DRVR RoHS: Not compliant Min Qty: 1 Container: Box	144In Stock	1:$248.7500
C2M0280120D DISTI # 29424048	Cree, Inc.	Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247 RoHS: Compliant	1043	30:$4.8255
C2M0280120D DISTI # 30990506	Cree, Inc.	Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247 RoHS: Compliant	170	2:$5.9576
C2M0280120D DISTI # 30729731	Cree, Inc.	Trans MOSFET N-CH SiC 1.2KV 10A 3-Pin(3+Tab) TO-247 RoHS: Compliant	86	2:$5.9576
C2M0280120D DISTI # 98Y6013	Wolfspeed	MOSFET, N-CH, 1.2KV, 10A, TO-247 ROHS COMPLIANT: YES	15	500:$5.0200 250:$5.1500 100:$5.2700 50:$5.3300 25:$5.5100 10:$5.8200 1:$6.1900
C2M0280120D DISTI # 941-C2M0280120D	Cree, Inc.	MOSFET SIC MOSFET 1200V RDS ON 280 mOhm RoHS: Compliant	4933	1:$5.4300 100:$5.2200 500:$4.9700
C2M0280120D DISTI # 9158820	Cree, Inc.	N-CHAN SIC MOSFET 1200V 10A TO247, PK	26	120:£4.4700 60:£4.5850 30:£4.7700 10:£4.8950 2:£5.1050
C2M0280120D DISTI # C2M0280120D	Wolfspeed	Transistor: N-MOSFET,SiC,unipolar,1.2kV,10A,62.5W,TO247-3	26	30:$6.0100 10:$6.4500 3:$7.4300 1:$8.4100
C2M0280120D DISTI # C2M0280120D	Wolfspeed	SILICON CARBIDE MOSFETS RoHS: Compliant	2649	1:$5.3200 11:$5.1600 51:$4.9400
C2M0280120D DISTI # 2630831	Wolfspeed	MOSFET, N-CH, 1.2KV, 10A, TO-247 RoHS: Compliant	634	1:$9.0600
C2M0280120D DISTI # 2630831	Wolfspeed	MOSFET, N-CH, 1.2KV, 10A, TO-247 RoHS: Compliant	726	100:£4.2400 50:£4.2800 10:£4.3100 5:£4.3500 1:£4.8200

C2M0280120

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes