APT5024BVFRG

Mfr. #:: APT5024BVFRG
제조사:: Microsemi Corporation
설명:: MOSFET Power FREDFET - MOS5
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: APT5024BVFRG 데이터 시트
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ECAD Model:

제품 속성
속성 값

Tags: APT5024B, APT5024, APT502, APT50, APT5, APT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APT5024BVFRG 설명

***ical: Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 Tube

***rochip: FREDFET MOS5 500 V 24 Ohm TO-247

*** Stop Electro: Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

***i-Key: MOSFET N-CH 500V 20A TO-247

***ser: MOSFETs 500V N-Channel Adv Q-FET V2 Ser

***ark: MOSFET, N TO-247MOSFET, N TO-247; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:500V; Case style:TO-247; Current, Id cont:20A; Current, Idm pulse:80A; Power, Pd:277W; Resistance, Rds on:0.225R; Case style, RoHS Compliant: Yes

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 126 mΩ, TO-247

***r Electronics: Power Field-Effect Transistor, 25A I(D), 600V, 0.126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***ment14 APAC: MOSFET, N CH, 600V, 25A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:75A

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-Channel 500V - 0.22Ohm - 20A - TO-247 FDmesh(TM) POWER MOSFET (with FAST DIODE)

***ure Electronics: N-Channel 500 V 0.25 Ohm Flange Mount FDmesh Power MosFet - TO-247

***nell: MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***et: TRANS MOSFET N-CH 600V 20A 3PIN TO-247

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:20A; On Resistance, Rds(on):150mohm; Current, Idm pulse:60A; Drain-Source Breakdown Voltage:600V; Leaded Process Compatible:Yes RoHS Compliant: Yes

***nell: MOSFET, N, TO-247; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.15R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-247 (SOT-249); Temperature, operating range:-55°C to +150°C; Case style, alternate:SOT-249; Current, Idm pulse:60A; Power, Pd:208W; Transistor polarity:N; Voltage, Vds max:600V

***icroelectronics: N-channel 500 V, 0.23 Ohm, 17 A SuperMESH(TM) Power MOSFET Zener-protected TO-247

***(Formerly Allied Electronics): MOSFET;N-Ch;VDSS 500V;RDS(ON) 0.23Ohm;ID 17A;TO-247;PD 190W;VGS +/-30V;gFS 13S

***ure Electronics: N-Channel 500 V 0.27 Ohm Flange Mount SuperMESH Power Mosfet - TO-247

*** Source Electronics: MOSFET N-CH 500V 17A TO-247 / Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 17A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ment14 APAC: MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:190W; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Id Max:17A; On State resistance @ Vgs = 10V:270mohm; Package / Case:TO-247; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 500 V, 0.090 Ohm, 27 A MDmesh" II Power MOSFET

***r Electronics: Power Field-Effect Transistor, 27A I(D), 500V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***nell: MOSFET, N CH, 500V, 27A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 27A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V

Market price

부분 #	제조	설명	재고	가격
APT5024BVFRG DISTI # V36:1790_18738401	Microsemi Corporation	APT5024BVFRG RoHS: Compliant	40	10:$71.2800 1:$102.9500
APT5024BVFRG DISTI # 30525739	Microsemi Corporation	APT5024BVFRG RoHS: Compliant	40	1:$102.9500
APT5024BVFRG DISTI # 494-APT5024BVFRG	Microchip Technology Inc	MOSFET Power FREDFET - MOS5 RoHS: Compliant	0
APT5024BVFRG	Microsemi Corporation	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant	103

영상	부분 #	설명
	Mfr.#: APT5020SVFRG OMO.#: OMO-APT5020SVFRG	MOSFET FG, FREDFET, 500V, 0.20_OHM, D3, TO-268, RoHS
	Mfr.#: APT5024BFLLG OMO.#: OMO-APT5024BFLLG	MOSFET FG, FREDFET, 500V, TO-247, RoHS
	Mfr.#: APT5020BVFRG OMO.#: OMO-APT5020BVFRG	MOSFET FG, FREDFET, 500V, TO-247, RoHS
	Mfr.#: APT5020BVFR OMO.#: OMO-APT5020BVFR-1190	신규 및 오리지널
	Mfr.#: APT5024BVFRG OMO.#: OMO-APT5024BVFRG-1190	MOSFET Power FREDFET - MOS5
	Mfr.#: APT5024BVR OMO.#: OMO-APT5024BVR-1190	신규 및 오리지널
	Mfr.#: APT5024SVR OMO.#: OMO-APT5024SVR-1190	신규 및 오리지널
	Mfr.#: APT5027BNR OMO.#: OMO-APT5027BNR-1190	신규 및 오리지널
	Mfr.#: APT5028BVR OMO.#: OMO-APT5028BVR-1190	신규 및 오리지널
	Mfr.#: APT5028BVRG OMO.#: OMO-APT5028BVRG-1190	Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247

APT5024BVFRG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes