2SC5065-O(TE85L,F)

Mfr. #:: 2SC5065-O(TE85L,F)
제조사:: Toshiba
설명:: Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2SC5065-O(TE85L,F) 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: 2SC5065-O(TE85L,F) Datasheet 2SC5065-O(TE85L,F) Datasheet (P4-P6)2SC5065-O(TE85L,F) Datasheet (P7)
ECAD Model:

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: 양극성 트랜지스터 - BJT

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SC-70-3

트랜지스터 극성:: NPN

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 12 V

컬렉터-베이스 전압 VCBO:: 20 V

이미터-베이스 전압 VEBO:: 3 V

수집기-이미터 포화 전압:: -

최대 DC 수집기 전류:: 30 mA

이득 대역폭 곱 fT:: 7 GHz

최소 작동 온도:: - 55 C

최대 작동 온도:: + 125 C

DC 전류 이득 hFE 최대:: 240

포장:: 릴

상표:: 도시바

지속적인 수집가 전류:: 30 mA

DC 수집기/기본 이득 hfe 최소:: 80

Pd - 전력 손실:: 100 mW

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

Tags: 2SC5065-O(T, 2SC5065-O, 2SC5065, 2SC506, 2SC50, 2SC5, 2SC

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SC5065-O(TE85L,F) 설명

***nsix Microsemi: 0.03A I(C) 1-Element Ultra High Frequency Band Silicon NPN

***i-Key: RF TRANS NPN 12V 7GHZ USM

***hard Electronics: Bipolar Transistors - BJT Radio-Freq Bipolar 30mA 100mW 12V

***et: Trans GP BJT NPN 12V 0.03A 3-Pin USM T/R

***i-Key: RF TRANS NPN 12V 7GHZ USM

***el Nordic: Contact for details

***roFlash: RF Bipolar Transistors NPN wideband silicon RF transistor

***ark: Trans Gp Bjt Npn 16V 0.05A Automotive 3-Pin Sc-70 T/r Rohs Compliant: Yes

***nell: RF TRANSISTOR, NPN, 12V, 10GHZ, SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10GHz; Power Dissipation Pd: 450mW; DC Collector Current: 30mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et: Trans GP BJT NPN 12V 0.035A 3-Pin SC-70 T/R

*** Electronics: RF Bipolar Transistors Single NPN 12V 35mA 300mW 40 5GHz

***peria: BFR93AW - NPN 5 GHz wideband transistor

***i-Key: TRANS NPN 12V 35MA 5GHZ SOT323

***el Electronic: Voltage Regulators - Switching Regulators SWITCHING REGULATOR

***W: RF Transistor, NPN, 2 GHz, Max. Gain in dB is 18.5 @ 900 MHz, 3 pin SOT323, Silicon

***ure Electronics: BFU520W Series 12 V 30 mA 450 mW NPN Wideband Silicon RF Transistor - SOT-323-3

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN

***ical: Trans RF BJT NPN 16V 0.05A 450mW Automotive 3-Pin SC-70 T/R

***enic: 1nA 12V 450mW 5mA 95@5mA8V 10GHz NPN -40¡Í~+150¡Í@(Tj) SOT-323-3 Bipolar Transistors - BJT ROHS

***et: Transistor RF BJT NPN 24V 30mA 3-Pin SOT-323

***ment14 APAC: RF Transistor, NPN, 12V, 10GHZ, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:10GHz; Power

***nell: RF TRANSISTOR, NPN, 12V, 10GHZ, SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10GHz; Power Dissipation Pd: 450mW; DC Collector Current: 30mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***roFlash: Trans Rf NPN 10V 1GHZ Ssm

***: TRANSISTOR PD=150MW F=1MHZ

영상	부분 #	설명
	Mfr.#: 2SC5065-O(TE85L,F) OMO.#: OMO-2SC5065-O-TE85L-F-	Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz
	Mfr.#: 2SC5065-O OMO.#: OMO-2SC5065-O-1190	신규 및 오리지널
	Mfr.#: 2SC5065-O(TE85LF)CT-ND OMO.#: OMO-2SC5065-O-TE85LF-CT-ND-1190	신규 및 오리지널
	Mfr.#: 2SC5065-O(TE85LF)DKR-ND OMO.#: OMO-2SC5065-O-TE85LF-DKR-ND-1190	신규 및 오리지널
	Mfr.#: 2SC5065-O(TE85LF)TR-ND OMO.#: OMO-2SC5065-O-TE85LF-TR-ND-1190	신규 및 오리지널

2SC5065-O(TE85L,F)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes