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FDU7N60NZTU

FDU7N60NZTU
Mfr. #:
FDU7N60NZTU
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDU7N60NZTU 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-251-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
5.5 A
Rds On - 드레인 소스 저항:
1.05 Ohms
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
90 W
구성:
하나의
상표명:
유니펫
포장:
튜브
키:
6.3 mm
길이:
6.8 mm
시리즈:
FDU7N60NZTU
트랜지스터 유형:
1 N-Channel
너비:
2.5 mm
상표:
온세미컨덕터 / 페어차일드
상품 유형:
MOSFET
공장 팩 수량:
5040
하위 카테고리:
MOSFET
단위 무게:
0.012102 oz
Tags
FDU7N60NZ, FDU7N60N, FDU7N6, FDU7N, FDU7, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK
***et
Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 500V, 6A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmeshII plus 600V 4.5A
*** Electronic Components
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 600V, 4.5A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ure Electronics
E Series N Channel 700 V 900 mO 34 nC Through Hole Power Mosfet - TO-251
***ical
Trans MOSFET N-CH 620V 6A 3-Pin(3+Tab) TO-251
***el Electronic
MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
***et Europe
Trans MOSFET N-CH 650V 4.3A 3-Pin TO-251 Tube
***ronik
N-CH 600V 4,3A 1000mOhm TO251
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
부분 # 제조 설명 재고 가격
FDU7N60NZTU
DISTI # FDU7N60NZTU-ND		ON SemiconductorMOSFET N-CH 600V SGL IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.6291
FDU7N60NZTU
DISTI # FDU7N60NZTU		ON SemiconductorMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: FDU7N60NZTU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.5619
  • 10080:$0.5579
  • 20160:$0.5509
  • 30240:$0.5439
  • 50400:$0.5299
FDU7N60NZTU
DISTI # 54T8364		ON SemiconductorUF2 600V 1.25OHM IPAK / TUBE0
  • 1:$1.4100
  • 10:$1.2100
  • 100:$0.9250
  • 500:$0.8170
  • 1000:$0.7140
  • 2500:$0.5770
  • 10000:$0.5590
FDU7N60NZTUON Semiconductor 
RoHS: Not Compliant		5040
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
FDU7N60NZTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		84030
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
FDU7N60NZTU
DISTI # 512-FDU7N60NZTU		ON SemiconductorMOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
RoHS: Compliant		5000
  • 1:$1.4200
  • 10:$1.2100
  • 100:$0.9250
  • 500:$0.8180
  • 1000:$0.6450
  • 2500:$0.5720
  • 10000:$0.5510
FDU7N60NZTU
DISTI # 8070710P		ON SemiconductorMOSFETFAIRCHILDFDU7N60NZTU, TU4560
  • 50:£0.3840
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STFH10N60M2

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OMO.#: OMO-STFH10N60M2-STMICROELECTRONICS

 MOSFET NCH 600V 7.5A TO220
유효성
재고:
Available
주문 시:
1986
수량 입력:
FDU7N60NZTU의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.95
US$0.95
10
US$0.82
US$8.17
100
US$0.63
US$62.70
500
US$0.55
US$277.00
1000
US$0.44
US$437.00
2500
US$0.39
US$970.00
10000
US$0.37
US$3 730.00
25000
US$0.36
US$9 025.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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