S25FL512SDPBHV210

S25FL512SDPBHV210
Mfr. #:
S25FL512SDPBHV210
제조사:
Cypress Semiconductor
설명:
NOR Flash 512-MBIT CMOS 3.0 V 65NM FLASH MEMORY
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S25FL512SDPBHV210 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
S25FL512SDPBHV210 추가 정보 S25FL512SDPBHV210 Product Details
제품 속성
속성 값
제조사:
사이프러스 반도체
제품 카테고리:
NOR 플래시
RoHS:
Y
장착 스타일:
SMD/SMT
패키지/케이스:
BGA-24
시리즈:
S25FL512S
메모리 크기:
512 Mbit
인터페이스 유형:
SPI
조직:
64 M x 8
타이밍 유형:
비동기
데이터 버스 폭:
8 bit
공급 전압 - 최소:
1.65 V
공급 전압 - 최대:
3.6 V
공급 전류 - 최대:
75 mA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 105 C
포장:
쟁반
메모리 유형:
도 아니다
속도:
66 MHz
건축학:
상표:
사이프러스 반도체
습기에 민감한:
상품 유형:
NOR 플래시
공장 팩 수량:
338
하위 카테고리:
메모리 및 데이터 저장
상표명:
미러비트
Tags
S25FL512SDPBHV2, S25FL512SDPBHV, S25FL512SDPB, S25FL512SDP, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 512 Mbit Density, FBGA-24, RoHS
***ark
TRAY PKGED / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, BGA-FAB024 IN TRAY PACKING
***i-Key
IC FLASH 512MBIT SPI/QUAD 24BGA
***ress Semiconductor SCT
Serial NOR Flash Memory, 256 Mbit Density, FBGA-24, RoHS
***et
NOR Flash Serial-SPI 3V 256Mbit 256M x 1bit 24-Pin BGA Tray
***ark
Tray Pkged / 256-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 66-Mhz Spi (Serial Peripheral Interface) And Multi I/o Bus - 256Kb, Bga-Fab024 In Tray Packing, With Reset#
***ical
NOR Flash Serial-SPI 3V/3.3V 128M-bit 128M x 1 8ns Automotive 24-Pin BGA Tray
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***ark
TRAY PKGED / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, BGA-FAB024 IN TRAY PACKING, WITH RESET#
***-Wing Technology
8542.32.00.51 Surface Mount Tray 16MX8 ic memory 66MHz 8ns 8mm 0.0003A
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***ark
Tray Pkged / 128-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 66-Mhz Spi (Serial Peripheral Interface) And Multi I/O Bus - 64Kb, Bga-Fab024 In Tray Packing, With Reset#
***i-Key
IC FLASH 128MBIT SPI/QUAD 24BGA
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
부분 # 제조 설명 재고 가격
S25FL512SDPBHV210
DISTI # S25FL512SDPBHV210-ND
Cypress SemiconductorIC FLASH 512M SPI 66MHZ 24BGA
RoHS: Compliant
Min Qty: 338
Container: Tray
Temporarily Out of Stock
  • 338:$6.8887
S25FL512SDPBHV210
DISTI # 727-S25FL512SDPBHV21
Cypress SemiconductorNOR Flash 512-MBIT CMOS 3.0 V 65NM FLASH MEMORY
RoHS: Compliant
0
  • 1:$10.7100
  • 10:$9.8100
  • 25:$8.9200
  • 50:$8.5000
  • 100:$8.0300
  • 250:$7.4200
  • 500:$6.4700
  • 1000:$6.0200
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OMO.#: OMO-530L104KT16T

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DRAM Chip LPDDR2 SDRAM 1G-Bit 32Mx32 1.2V 134-Pin F-BGA T/R - Tape and Reel (Alt: EDB1332BDBH-1DAAT-F-R)
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Mfr.#: HHXB630ARA100MF61G

OMO.#: OMO-HHXB630ARA100MF61G-UNITED-CHEMI-CON

Aluminum Organic Polymer Capacitors 10uF 63V 20% Hybrid Polyme
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Mfr.#: 530L104KT16T

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Mfr.#: EVAL-ADXL355Z

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유효성
재고:
245
주문 시:
2228
수량 입력:
S25FL512SDPBHV210의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$10.71
US$10.71
10
US$9.81
US$98.10
25
US$8.92
US$223.00
50
US$8.50
US$425.00
100
US$8.03
US$803.00
250
US$7.42
US$1 855.00
500
US$6.47
US$3 235.00
1000
US$6.02
US$6 020.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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