1MBC10D-060

Mfr. #:: 1MBC10D-060
제조사:: Fuji Electric Co Ltd
설명:: IGBT, IGBT+FWD, Molded, TO-220AB Case, 20A Collector, 75 W (Max.), 600V, +/-20V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 1MBC10D-060 데이터 시트
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제품 속성
속성 값

Tags: 1MBC1, 1MBC, 1MB

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

1MBC10D-060 설명

***(Formerly Allied Electronics): IGBT, IGBT+FWD, Molded, TO-220AB Case, 20A Collector, 75 W (Max.), 600V, +/-20V

*** Electronics: IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB

***p One Stop: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

***ure Electronics: IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

***itex: Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

***ure Electronics: IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

*** Stop Electro: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon SCT: IRGB20B60PD1PBF Series 600 V 22 A N-Channel UltraFast IGBT - TO-220AB, TO220COPAK-3, RoHS

***et: Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB

*** Stop Electro: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, 600V, 40A, TO-220AB; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-220AB; Power Dissipation Max:215W; Power Dissipation Pd:215W; Power Dissipation Pd:215W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-220AB

***ure Electronics: IXGP Series 1200 V 40 A Flange Mount GEN X3 IGBT - TO-220AB

***nell: IGBT,1200V,20A,TO-220AB; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins

***ark: Genx3 Igbt, 1200V, 40A, To-220Ab; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:180W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes

*** Source Electronics: Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB

***ure Electronics: HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB

***r Electronics: Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***rchild Semiconductor: The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

***ure Electronics: IXA20I1200PB Series 1200 V 38 A Through Hole Silicon IGBT - TO-220-3

***el Electronic: IXYS SEMICONDUCTOR IXA20I1200PB IGBT Single Transistor, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 Pins

***nell: IGBT,1200V,33A,TO-220; DC Collector Current: 33A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins;

***ark: Igbt, 1200V, 33A, To-220; Continuous Collector Current:33A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:130W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
1MBC10D-060 DISTI # 70212511	Fuji Electric Co Ltd	IGBT,IGBT+FWD,Molded,TO-220AB Case,20A Collector,75 W (Max.),600V,+/-20V RoHS: Not Compliant	0	500:$4.9500
1MBC10D-060 DISTI # FE0000000001160	Fuji Electric Co Ltd	MOSFET RoHS: Compliant	0 in Stock0 on Order	500:$1.3600 1:$1.4600

1MBC10D-060

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes