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IPD65R950C6ATMA1

IPD65R950C6ATMA1
Mfr. #:
IPD65R950C6ATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 700V 4.5A DPAK-2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD65R950C6ATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
XPD65R950
포장
릴
부분 별칭
IPD65R950C6 SP001107082
단위 무게
0.139332 oz
장착 스타일
SMD/SMT
상표명
쿨모스
패키지 케이스
TO-252-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
37 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
13.6 ns
상승 시간
5.2 ns
Vgs 게이트 소스 전압
30 V
Id-연속-드레인-전류
4.5 A
Vds-드레인-소스-고장-전압
700 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Resistance
950 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
41 ns
일반 켜기 지연 시간
6.6 ns
Qg-Gate-Charge
15.3 nC
Tags
IPD65R950C, IPD65R9, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 650(Min)V 4.5A 3-Pin TO-252 T/R
***ical
Trans MOSFET N-CH 700V 4.5A 3-Pin(2+Tab) DPAK
***i-Key
MOSFET N-CH TO252-3
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
부분 # 제조 설명 재고 가격
IPD65R950C6ATMA1
DISTI # IPD65R950C6ATMA1-ND		Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.5342
IPD65R950C6ATMA1
DISTI # IPD65R950C6ATMA1		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 4.5A 3-Pin TO-252 T/R - Bulk (Alt: IPD65R950C6ATMA1)
Min Qty: 782
Container: Bulk		Americas - 0
  • 7820:$0.4059
  • 3910:$0.4129
  • 2346:$0.4279
  • 1564:$0.4439
  • 782:$0.4609
IPD65R950C6ATMA1
DISTI # SP001107082		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 4.5A 3-Pin TO-252 T/R (Alt: SP001107082)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.4369
  • 15000:€0.4669
  • 10000:€0.5359
  • 5000:€0.6419
  • 2500:€0.7649
IPD65R950C6ATMA1
DISTI # 726-IPD65R950C6ATMA1		Infineon Technologies AGMOSFET N-Ch 700V 4.5A DPAK-22500
  • 1:$1.1300
  • 10:$0.9710
  • 100:$0.7450
  • 500:$0.6590
  • 1000:$0.5200
  • 2500:$0.4610
  • 10000:$0.4440
IPD65R950C6
DISTI # 726-IPD65R950C6		Infineon Technologies AGMOSFET N-Ch 700V 4.5A DPAK-2
RoHS: Compliant		2561
  • 1:$1.1300
  • 10:$0.9720
  • 100:$0.7460
  • 500:$0.6600
  • 1000:$0.5210
  • 2500:$0.4620
IPD65R950C6ATMA1Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252
RoHS: Compliant		195000
  • 1000:$0.4200
  • 500:$0.4400
  • 100:$0.4600
  • 25:$0.4800
  • 1:$0.5200
IPD65R950C6ATMA1
DISTI # IPD65R950C6ATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,4.5A,37W,PG-TO252-315
  • 1:$0.9600
  • 3:$0.8200
  • 10:$0.6500
  • 100:$0.5800
영상 부분 # 설명
IPD65R950CFDBTMA1

Mfr.#: IPD65R950CFDBTMA1

OMO.#: OMO-IPD65R950CFDBTMA1

 MOSFET N-Ch 700V 3.9A DPAK-2
IPD65R950CFD

Mfr.#: IPD65R950CFD

OMO.#: OMO-IPD65R950CFD

 MOSFET N-Ch 700V 3.9A DPAK-2
IPD65R950C6

Mfr.#: IPD65R950C6

OMO.#: OMO-IPD65R950C6

 MOSFET N-Ch 700V 4.5A DPAK-2
IPD65R950CFDATMA2

Mfr.#: IPD65R950CFDATMA2

OMO.#: OMO-IPD65R950CFDATMA2

 MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
IPD65R950CFDATMA1

Mfr.#: IPD65R950CFDATMA1

OMO.#: OMO-IPD65R950CFDATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 3.9A TO-252
IPD65R950CFDATMA2

Mfr.#: IPD65R950CFDATMA2

OMO.#: OMO-IPD65R950CFDATMA2-INFINEON-TECHNOLOGIES

 LOW POWER_LEGACY
IPD65R950C6

Mfr.#: IPD65R950C6

OMO.#: OMO-IPD65R950C6-1190

 MOSFET N-Ch 700V 4.5A DPAK-2
IPD65R950E6

Mfr.#: IPD65R950E6

OMO.#: OMO-IPD65R950E6-1190

 신규 및 오리지널
IPD65R950C6ATMA1

Mfr.#: IPD65R950C6ATMA1

OMO.#: OMO-IPD65R950C6ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 700V 4.5A DPAK-2
IPD65R950CFDBTMA1

Mfr.#: IPD65R950CFDBTMA1

OMO.#: OMO-IPD65R950CFDBTMA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 700V 3.9A DPAK-2
유효성
재고:
Available
주문 시:
4000
수량 입력:
IPD65R950C6ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.61
US$0.61
10
US$0.58
US$5.78
100
US$0.55
US$54.80
500
US$0.52
US$258.75
1000
US$0.49
US$487.10
시작
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