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IPB024N08N5ATMA1

IPB024N08N5ATMA1
Mfr. #:
IPB024N08N5ATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH 80V TO263-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB024N08N5ATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPB024N08N5ATMA1 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
릴
부분 별칭
IPB024N08N5 SP001227044
단위 무게
0.139332 oz
장착 스타일
SMD/SMT
패키지 케이스
TO-263-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
214 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
가을철
15 ns
상승 시간
14 ns
Vgs 게이트 소스 전압
+/- 20 V
Id-연속-드레인-전류
120 A
Vds-드레인-소스-고장-전압
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Resistance
3.1 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
46 ns
일반 켜기 지연 시간
22 ns
Qg-Gate-Charge
99 nC
순방향 트랜스컨덕턴스-최소
89 S
채널 모드
상승
Tags
IPB024, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
***ronik
N-CH 80V 120A 2,4mOhm TO263-3
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
부분 # 제조 설명 재고 가격
IPB024N08N5ATMA1
DISTI # V72:2272_06378736		Infineon Technologies AGTrans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		970
  • 500:$2.2230
  • 250:$2.4810
  • 100:$2.6240
  • 25:$3.0160
  • 10:$3.0480
  • 1:$3.5490
IPB024N08N5ATMA1
DISTI # IPB024N08N5ATMA1-ND		Infineon Technologies AGMOSFET N-CH 80V TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.2392
IPB024N08N5ATMA1
DISTI # 27074090		Infineon Technologies AGTrans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.9584
IPB024N08N5ATMA1
DISTI # 26195054		Infineon Technologies AGTrans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		970
  • 500:$2.2230
  • 250:$2.4810
  • 100:$2.6240
  • 25:$3.0160
  • 10:$3.0480
  • 4:$3.5490
IPB024N08N5ATMA1
DISTI # IPB024N08N5ATMA1		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPB024N08N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.9900
  • 2000:$1.9900
  • 4000:$1.8900
  • 6000:$1.7900
  • 10000:$1.7900
IPB024N08N5ATMA1
DISTI # SP001227044		Infineon Technologies AGMV POWER MOS (Alt: SP001227044)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.8900
  • 2000:€1.7900
  • 4000:€1.7900
  • 6000:€1.5900
  • 10000:€1.4900
IPB024N08N5ATMA1
DISTI # IPB024N08N5		Infineon Technologies AGMV POWER MOS (Alt: IPB024N08N5)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 1000:$2.0771
  • 2000:$2.0194
  • 3000:$1.9649
  • 5000:$1.9132
  • 10000:$1.8883
  • 25000:$1.8641
  • 50000:$1.8405
IPB024N08N5ATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		1900
  • 1000:$1.7500
  • 500:$1.8400
  • 100:$1.9200
  • 25:$2.0000
  • 1:$2.1500
IPB024N08N5ATMA1
DISTI # 726-IPB024N08N5ATMA1		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2
RoHS: Compliant		943
  • 1:$3.8500
  • 10:$3.2800
  • 100:$2.8400
  • 250:$2.7000
  • 500:$2.4200
영상 부분 # 설명
IPB024N08N5ATMA1

Mfr.#: IPB024N08N5ATMA1

OMO.#: OMO-IPB024N08N5ATMA1

 MOSFET N-Ch 80V 120A D2PAK-2
IPB024N08N5

Mfr.#: IPB024N08N5

OMO.#: OMO-IPB024N08N5-1190

 N-CH 80V 120A 2,4mOhm TO263-3
IPB024N08N5ATMA1

Mfr.#: IPB024N08N5ATMA1

OMO.#: OMO-IPB024N08N5ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V TO263-3
유효성
재고:
Available
주문 시:
2500
수량 입력:
IPB024N08N5ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.54
US$2.54
10
US$2.41
US$24.13
100
US$2.29
US$228.58
500
US$2.16
US$1 079.40
1000
US$2.03
US$2 031.80
시작
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