MRFE6P3300HR3

Mfr. #:: MRFE6P3300HR3
제조사:: NXP / Freescale
설명:: RF MOSFET Transistors HV6 900MHZ 300W NI860ML
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MRFE6P3300HR3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: Y

트랜지스터 극성:: N-채널

기술:: 시

Vds - 드레인 소스 항복 전압:: 66 V

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: NI-860C3

포장:: 릴

구성:: 단일 이중 드레인 이중 게이트

키:: 5.69 mm

길이:: 34.16 mm

시리즈:: MRFE6P3300H

유형:: RF 전력 MOSFET

너비:: 10.31 mm

상표:: NXP / 프리스케일

채널 모드:: 상승

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 250

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: - 0.5 V, 12 V

부품 번호 별칭:: 935309635128

단위 무게:: 0.223087 oz

Tags: MRFE6P3, MRFE6P, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRFE6P3300HR3 설명

***ark: Lateral N-Channel Rf Power Mosfet, 860 Mhz, 300 W, 32 V Rohs Compliant: Yes

***W: RF Power Transistor,470 to 860 MHz, 300 W, Typ Gain in dB is 20.4 @ 860 MHz, 32 V, LDMOS, SOT1856

***et: Transistor RF MOSFET N-Channel 66V 5-Pin NI-860C3

*** Electronic Components: RF MOSFET Transistors HV6 900MHZ 300W NI860ML

***or: RF 2-ELEMENT, ULTRA HIGH FREQUEN

***el Electronic: IC REG LINEAR 1.5V 80MA SC82AB

***escale Semiconductor: Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V

***W: RF Power Transistor,865 to 960 MHz, 125 W, Typ Gain in dB is 20.2 @ 880 MHz, 28 V, LDMOS, SOT1735

***et: Transistor RF FET N-CH 66V 865MHz to 960MHz 5-Pin TO-272WB T/R

***ical: Trans RF MOSFET N-CH 66V 5-Pin TO-272 WB EP T/R

*** Electronic Components: RF MOSFET Transistors HV6E 125W

***escale Semiconductor: Single N-CDMA Lateral N-Channel RF Power MOSFET, 865-900 MHz, 47 W Avg., 28 V

*** Electronic Components: RF MOSFET Transistors HV6E 900MHZ 200W NI860ML

*** Electronics: Trans RF MOSFET N-CH 66V 5-Pin NI-860C3 T/R

***or: RF 2-ELEMENT, ULTRA HIGH FREQUE

***el Electronic: IC REG LINEAR 1.8V 80MA SC82AB

***ical: Trans RF MOSFET N-CH 66V 3-Pin NI-780 T/R

*** Electronic Components: RF MOSFET Transistors HV6E 900MHZ 160W NI780H

***i-Key: RF ULTRA HIGH FREQUENCY BAND, N-

***ure Electronics: LET9060C Series 945 MHz 130 W 80 V N-Channel RF Power Transistor MOSFET - M-243

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ark: Mosfet, Rf, N-Ch, 80V, M243-3; Drain Source Voltage Vds:80V; Continuous Drain Current Id:12A; Power Dissipation Pd:130W; Operating Frequency Min:-; Operating Frequency Max:945Mhz; Rf Transistor Case:-; No. Of Pins:3Pins; Msl:-

***icroelectronics: 120W 28V HF to 1GHz LDMOS TRANSISTOR in push-pull package

***ure Electronics: LdmoST Family 100 W N - Channel Enhancement - mode MOSFETs RF Power Transistor

***ical: Trans RF MOSFET N-CH 60V 14A 5-Pin Case M-246 Loose

***ser: RF & Microwave Transistors N-Ch 65 Volt 14 Amp

***r Electronics: RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ource: RF POWER TRANSISTORS RF POWER TRANSISTORS

***icroelectronics: 30W 28V HF to 1GHz LDMOS TRANSISTOR

***et: Transistor RF FET N-CH 65V 4A 945MHz 3-Pin Case M-243

***ure Electronics: Single N-Channel 65 V 74 W Silicon Mosfet - M-243

***ser: RF & Microwave Transistors N-Ch 65 Volt 4 Amp

***icroelectronics SCT: RF power transistor, the LdmoST family

***ponent Stockers USA: UHF BAND Si N-CHANNEL RF POWER MOSFET

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Market price

부분 #	제조	설명	재고	가격
MRFE6P3300HR3 DISTI # MRFE6P3300HR3-ND	NXP Semiconductors	FET RF 66V 863MHZ NI-860C3 RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Limited Supply - Call
MRFE6P3300HR3 DISTI # MRFE6P3300HR3	Avnet, Inc.	Trans MOSFET N-CH 66V 5-Pin NI-860C3 T/R (Alt: MRFE6P3300HR3) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Europe - 92	250:€333.3900 500:€327.3900 1000:€317.2900 1500:€306.9900 2500:€299.2900
MRFE6P3300HR3. DISTI # 61AC0761	NXP Semiconductors	LATERAL N-CHANNEL RF POWER MOSFET, 860 MHZ, 300 W, 32 V ROHS COMPLIANT: YES	0
MRFE6P3300HR3 DISTI # 841-MRFE6P3300HR3	NXP Semiconductors	RF MOSFET Transistors HV6 900MHZ 300W NI860ML RoHS: Compliant	0
MRFE6P3300HR3 DISTI # MRFE6P3300HR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	102	1:$384.6800 10:$353.4900 25:$348.7800

관련 상품

영상	부분 #	설명
	Mfr.#: MRFE6P3300HR3 OMO.#: OMO-MRFE6P3300HR3	RF MOSFET Transistors HV6 900MHZ 300W NI860ML
	Mfr.#: MRFE6P9220HR3 OMO.#: OMO-MRFE6P9220HR3	RF MOSFET Transistors HV6E 900MHZ 200W NI860ML
	Mfr.#: MRFE6P3300H OMO.#: OMO-MRFE6P3300H-1190	신규 및 오리지널
	Mfr.#: MRFE6P3300HR5 OMO.#: OMO-MRFE6P3300HR5-NXP-SEMICONDUCTORS	FET RF 66V 863MHZ NI-860C3
	Mfr.#: MRFE6P9220H OMO.#: OMO-MRFE6P9220H-1190	신규 및 오리지널
	Mfr.#: MRFE6P9220HR3 OMO.#: OMO-MRFE6P9220HR3-NXP-SEMICONDUCTORS	FET RF 66V 880MHZ NI-860C3
	Mfr.#: MRFE6P3300HR3 OMO.#: OMO-MRFE6P3300HR3-NXP-SEMICONDUCTORS	FET RF 66V 863MHZ NI-860C3

유효성

재고:: Available
주문 시:: 3500
수량 입력:

MRFE6P3300HR3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

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MRFE6P3300HR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes