SEMIX303GB12E4S

Mfr. #:: SEMIX303GB12E4S
제조사:: SEMIKRON
설명:: IGBT MODULE, DUAL, 1.2KV, 466A, Transistor Polarity:Dual NPN, DC Collector Current:466A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SEMIX303GB12E4S 데이터 시트
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Tags: SEMIX303GB, SEMIX303, SEMIX30, SEMIX3, SEMIX, SEMI, SEM

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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SEMIX303GB12E4S 설명

***(Formerly Allied Electronics): IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS

***ikron: Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability UL recognized, file no. E63532 Typical Applications: AC inverter drives UPS Electronic Welding

***ark: IGBT MODULE, DUAL, 1.2KV, 466A; Continuous Collector Current:466A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ical: Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray

***ineon SCT: EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS

***ment14 APAC: IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power

***ark: IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ineon: EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon

***ure Electronics: FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module

***ark: Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***trelec: Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray

***ineon: Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ark: IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module

*** Source Electronics: Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A

***ure Electronics: FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module

***nell: IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans

***ineon: Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***icontronic: Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP

*** Electronic Components: Bipolar Transistors - BJT NPN Power Module

***ow.cn: Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube

***nell: TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style

***ark: BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
SEMIX303GB12E4S DISTI # 77R2118	SEMIKRON	IGBT MODULE, DUAL, 1.2KV, 466A,Transistor Polarity:Dual NPN,DC Collector Current:466A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:- RoHS Compliant: Yes	0	100:$111.6300 50:$118.7700 25:$120.5600 10:$122.3500 5:$125.9200 1:$129.4900
SEMIX303GB12E4S DISTI # 70098358	SEMIKRON	IGBT Half-Bridge Ultrafast,1200V,SEMITRANS RoHS: Compliant	0	1:$180.5400 6:$170.8900 42:$162.2200 96:$154.3700 144:$147.2600

관련 상품

영상	부분 #	설명
	Mfr.#: SEMIX302GB126HDS OMO.#: OMO-SEMIX302GB126HDS-1190	신규 및 오리지널
	Mfr.#: SEMIX302GB128DS OMO.#: OMO-SEMIX302GB128DS-1190	신규 및 오리지널
	Mfr.#: SEMIX302GB12T4S OMO.#: OMO-SEMIX302GB12T4S-1190	신규 및 오리지널
	Mfr.#: SEMIX302KD16S OMO.#: OMO-SEMIX302KD16S-1190	SEMIX, Trench IGBT Module, 1600V, 300A
	Mfr.#: SEMIX302KT16S OMO.#: OMO-SEMIX302KT16S-1190	SEMIX, Trench Rectifier Thyristor Module, 1600V, 300A
	Mfr.#: SEMIX303GB12E4S OMO.#: OMO-SEMIX303GB12E4S-1190	IGBT MODULE, DUAL, 1.2KV, 466A, Transistor Polarity:Dual NPN, DC Collector Current:466A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
	Mfr.#: SEMIX303GB12V OMO.#: OMO-SEMIX303GB12V-1190	신규 및 오리지널
	Mfr.#: SEMIX303GB12VS OMO.#: OMO-SEMIX303GB12VS-1190	신규 및 오리지널
	Mfr.#: SEMIX303GD12E4C OMO.#: OMO-SEMIX303GD12E4C-1190	신규 및 오리지널
	Mfr.#: SEMIX303GD12VC OMO.#: OMO-SEMIX303GD12VC-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 4500
수량 입력:

SEMIX303GB12E4S의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.00~~; ~~US$0.00~~

10: ~~US$0.00~~; ~~US$0.00~~

100: ~~US$0.00~~; ~~US$0.00~~

500: ~~US$0.00~~; ~~US$0.00~~

1000: ~~US$0.00~~; ~~US$0.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SEMIX303GB 4
SEMIX303 7
SEMIX30 17
SEMIX3 29
SEMIX 104
SEMI 124
SEM 492

SEMIX303GB12E4S

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes