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IRFB3207ZGPBF

IRFB3207ZGPBF
Mfr. #:
IRFB3207ZGPBF
제조사:
Infineon Technologies
설명:
MOSFET MOSFT 75V 170A 4.1mOhm 120nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFB3207ZGPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB3207ZGPBF DatasheetIRFB3207ZGPBF Datasheet (P4-P6)IRFB3207ZGPBF Datasheet (P7-P8)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
75 V
Id - 연속 드레인 전류:
170 A
Rds On - 드레인 소스 저항:
3.3 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
120 nC
Pd - 전력 손실:
300 W
구성:
하나의
포장:
튜브
키:
15.65 mm
길이:
10 mm
트랜지스터 유형:
1 N-Channel
너비:
4.4 mm
상표:
인피니언 테크놀로지스
상품 유형:
MOSFET
공장 팩 수량:
1000
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001554560
단위 무게:
0.211644 oz
Tags
IRFB3207ZGP, IRFB3207ZG, IRFB3207Z, IRFB3207, IRFB320, IRFB32, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ied Electronics & Automation
MOSFET, 75V, 170A, 4.1 MOHM, 120 NC QG,TO-220AB, HALOGEN-FREE
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***et
Trans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, 75V, 210A, TO-220AB; Continuous; MOSFET, 75V, 210A, TO-220AB; Continuous Drain Current Id:210A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W
부분 # 제조 설명 재고 가격
IRFB3207ZGPBF
DISTI # IRFB3207ZGPBF-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		20In Stock
  • 10:$2.7500
  • 1:$3.0800
IRFB3207ZGPBF
DISTI # IRFB3207ZGPBF		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB (Alt: IRFB3207ZGPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRFB3207ZGPBF
    DISTI # IRFB3207ZGPBF    		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3207ZGPBF)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 1000:$1.8900
    • 2000:$1.7900
    • 4000:$1.7900
    • 6000:$1.6900
    • 10000:$1.6900
    IRFB3207ZGPBF
    DISTI # SP001554560    		Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB (Alt: SP001554560)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€1.8900
    • 10:€1.4900
    • 25:€1.1900
    • 50:€1.0900
    • 100:€1.0900
    • 500:€1.0900
    • 1000:€1.0900
    IRFB3207ZGPBF
    DISTI # 70019672    		Infineon Technologies AGIRFB3207ZGPBF N-channel MOSFET Module,170 A,75 V,3-Pin TO-220AB
    RoHS: Compliant    		0
    • 350:$4.6410
    IRFB3207ZGPBF
    DISTI # 942-IRFB3207ZGPBF    		Infineon Technologies AGMOSFET MOSFT 75V 170A 4.1mOhm 120nC
    RoHS: Compliant    		193
    • 1:$2.6500
    • 10:$2.2500
    • 100:$1.9600
    IRFB3207ZGPBFInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		41
    • 1000:$1.3200
    • 500:$1.3900
    • 100:$1.4400
    • 25:$1.5000
    • 1:$1.6200
    IRFB3207ZGPBFInternational RectifierPower Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		145
    • 1000:$1.3200
    • 500:$1.3900
    • 100:$1.4400
    • 25:$1.5000
    • 1:$1.6200
    IRFB3207ZGPBFInternational Rectifier120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB7
    • 4:$2.5200
    • 1:$3.7800
    IRFB3207ZGPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 300
      영상 부분 # 설명
      IRFB3207ZPBF

      Mfr.#: IRFB3207ZPBF

      OMO.#: OMO-IRFB3207ZPBF

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      Mfr.#: IRFB3206PBF

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      IRFB3207

      Mfr.#: IRFB3207

      OMO.#: OMO-IRFB3207-1190

      		 75 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
      IRFB3207PBF,IRFB4020PBF,

      Mfr.#: IRFB3207PBF,IRFB4020PBF,

      OMO.#: OMO-IRFB3207PBF-IRFB4020PBF--1190

      		 신규 및 오리지널
      IRFB3207PBF/IXTP170N075T

      Mfr.#: IRFB3207PBF/IXTP170N075T

      OMO.#: OMO-IRFB3207PBF-IXTP170N075T-1190

      		 신규 및 오리지널
      IRFB3207Z

      Mfr.#: IRFB3207Z

      OMO.#: OMO-IRFB3207Z-1190

      		 신규 및 오리지널
      IRFB3207ZG

      Mfr.#: IRFB3207ZG

      OMO.#: OMO-IRFB3207ZG-1190

      		 신규 및 오리지널
      IRFB3207ZGPBF-T

      Mfr.#: IRFB3207ZGPBF-T

      OMO.#: OMO-IRFB3207ZGPBF-T-1190

      		 신규 및 오리지널
      IRFB3256PBF

      Mfr.#: IRFB3256PBF

      OMO.#: OMO-IRFB3256PBF-INFINEON-TECHNOLOGIES

      		 Darlington Transistors MOSFET MOSFET, 60V, 210A, 3 130 nC Qg, TO-220AB
      유효성
      재고:
      193
      주문 시:
      2176
      수량 입력:
      IRFB3207ZGPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$2.64
      US$2.64
      10
      US$2.25
      US$22.50
      100
      US$1.95
      US$195.00
      250
      US$1.85
      US$462.50
      500
      US$1.66
      US$830.00
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